In situ fixed angle X-ray reflectivity study of sputter-deposited amorphous LaNiO3 thin film on Si substrate

1998 ◽  
Vol 248 (1-4) ◽  
pp. 109-114 ◽  
Author(s):  
Chih-Hao Lee ◽  
Hsin-Yi Lee ◽  
K.S. Liang ◽  
Tai-Bor Wu
Keyword(s):  
Thin Film ◽  
Si Substrate ◽  
Fixed Angle ◽  
X Ray ◽  
Sputter Deposited

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

Study of the quality of GaAs thin film on Si substrate by X-ray diffraction method

1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

Anin situatomic force microscope for normal-incidence nanofocus X-ray experiments

2016 ◽  
Vol 23 (5) ◽  
pp. 1110-1117 ◽  
Author(s):  
M. V. Vitorino ◽  
Y. Fuchs ◽  
T. Dane ◽  
M. S. Rodrigues ◽  
M. Rosenthal ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscope ◽  
High Speed ◽  
Normal Incidence ◽  
Organic Thin Film ◽  
X Ray ◽  
Atomic Force ◽  
Synchrotron Beamlines

A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.

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