In Situ Fixed-Angle X-ray Reflectivity Measurement of Thin-Film Roughness and Thickness during Deposition

1998 ◽  
Vol 31 (2) ◽  
pp. 181-184 ◽  
Author(s):  
C. H. Lee ◽  
S. Y. Tseng
1998 ◽  
Vol 248 (1-4) ◽  
pp. 109-114 ◽  
Author(s):  
Chih-Hao Lee ◽  
Hsin-Yi Lee ◽  
K.S. Liang ◽  
Tai-Bor Wu

2016 ◽  
Vol 23 (5) ◽  
pp. 1110-1117 ◽  
Author(s):  
M. V. Vitorino ◽  
Y. Fuchs ◽  
T. Dane ◽  
M. S. Rodrigues ◽  
M. Rosenthal ◽  
...  

A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.


1999 ◽  
Vol 562 ◽  
Author(s):  
C. Liu ◽  
L. Shen ◽  
H. Jiang ◽  
D. Yang ◽  
G. Wu ◽  
...  

ABSTRACTThe Ni80Fe20/Fe50Mn50,thin film system exhibits exchange bias behavior. Here a systematic study of the effect of atomic-scale thin film roughness on coercivity and exchange bias is presented. Cu (t) / Ta (100 Å) / Ni80Fe20 (100 Å) / Fe50Mno50 (200 Å) / Ta (200 Å) with variable thickness, t, of the Cu underlayer were DC sputtered on Si (100) substrates. The Cu underlayer defines the initial roughness that is transferred to the film material since the film grows conformal to the initial morphology. Atomic Force Microscopy and X-ray diffraction were used to study the morphology and texture of the films. Morphological characterization is then correlated with magnetometer measurements. Atomic Force Microscopy shows that the root mean square value of the film roughness exhibits a maximum of 2.5 Å at t = 2.4 Å. X-ray diffraction spectra show the films are polycrystalline with fcc (111) texture and the Fe50Mn50 (111) peak intensity decreases monotonically with increasing Cu thickness, t. Without a Cu underlayer, the values of the coercivity and loop shift are, Hc = 12 Oe and Hp = 56 Oe, respectively. Both the coercivity and loop shift change with Cu underlayer thickness. The coercivity reaches a maximum value of Hc= 36 Oe at t = 4 Å. The loop shift exhibits an initial increase with t, reaches a maximum value of HP = 107 Oe at t = 2.4 Å, followed by a decrease with greater Cu thickness. These results show that a tiny increase in the film roughness has a huge effect on the exchange bias magnitude.


2013 ◽  
Vol 1495 ◽  
Author(s):  
Kee-Chul Chang ◽  
Brian Ingram ◽  
Paul Salvador ◽  
Bilge Yildiz ◽  
Hoydoo You

ABSTRACTWe will briefly review in situ synchrotron x-ray investigation of model thin film cathode systems for solid oxide fuel cells. The film cathodes examined in this study are (La,Sr)MnO3_δ (LSM), (La,Sr)CoO3_δ (LSC), and La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) thin films epitaxially grown on YSZ single crystal substrates by the pulse laser deposition technique. We find in all cases that Sr is enriched or segregated to the surface of the film cathodes. We concluded that the Sr enrichments or segregations are mainly the results of annealing because they do not depend on whether the cathodes are electrochemically biased or not during annealing. However, at least in the case of LSCF, we find that B-site Co segregates rather uniformly to the surface and the segregation responds sensitively and reversibly to the electrochemical bias.


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