The pore opening process of etching polymer films irradiated by single and multiple heavy ions. The etching process in the range of the track core radius (10 nm)

This paper describes results of the method of manufacturing the polypropylene track membranes produced by physicochemical treatment under irradiation of accelerated heavy ions of polymer films. The developed method allows to produce membranes with pores of 0.1-0.2 μm in diameter and more, with an improved structural and physicochemical properties. Polypropylene track membranes of a novel sample are characterized by high homogeneity of pore sizes in magnitude, considerable mechanical strength, advanced thermal stability and resistance to oxidation in aggressive media. It opens new fields for their usage.

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Nano-Scale Devices Embedded in Self-Supporting Polymer Foils

MRS Proceedings ◽

10.1557/proc-814-i7.4 ◽

2004 ◽

Vol 814 ◽

Author(s):

R. Könenkamp ◽

J. Chen ◽

S. Klaumuenzer ◽

R. Engelhardt

Keyword(s):

Electron Microscopy ◽

Polymer Films ◽

Heavy Ions ◽

Electronic Devices ◽

Mechanical Forces ◽

Nano Scale ◽

Deep Well ◽

Low Sensitivity ◽

Polymer Foils ◽

Crystalline Growth

AbstractSelf-supporting polymer foils of several micrometer thickness have been structured using irradiation by fast heavy ions and subsequent etching. Very deep, well defined nanostructures can be prepared in this way. These can then be used as templates for semiconductor deposition and the fabrication of robust embedded electronic devices. Electron microscopy shows void- filling poly-crystalline growth in the polymer films. Electrical experiments show low sensitivity when mechanical forces are exerted on the foil, suggesting that the embedded nano- devices can be used as reliable sensors in applications with considerable bending of the foils. Two different transistor arrangements will be discussed.

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Tailoring Mesoporous Silicon Surface to Form a Versatile Template for Nanoparticle Deposition

Coatings ◽

10.3390/coatings11060699 ◽

2021 ◽

Vol 11 (6) ◽

pp. 699

Author(s):

Nadzeya Khinevich ◽

Mindaugas Juodėnas ◽

Asta Tamulevičienė ◽

Hanna Bandarenka ◽

Sigitas Tamulevičius

Keyword(s):

Current Density ◽

Superficial Layer ◽

Electrochemical Anodization ◽

Nanoparticle Arrays ◽

Pore Density ◽

Mesoporous Silicon ◽

Nanoparticle Deposition ◽

Before And After ◽

Pore Opening ◽

Opening Process

Porous silicon (PS) can be used as a loading template in sensing or as a matrix to develop nanoparticle arrays. We present a comprehensive study of PS morphology and optical properties before and after the pore opening process, including the determination of thickness, pore size, and pore density of PS layers, its surface wettability, and reflectivity. The PS samples were fabricated by electrochemical anodization of monocrystalline silicon wafer in 5–20 wt.% hydrofluoric acid (HF) solution at a current density in the range of 20–200 mA/cm2. Anodization was followed by the pore opening process, i.e., the removal of a parasitic superficial layer with a “bottleneck” structure by reactive ion etching (RIE). The results illustrate that “bottleneck”-free PS allows to achieve a high pore density using a low HF concentration and a reduced current density. We established that this structure demonstrates higher hydrophobicity in comparison to the samples before RIE. The applicability of the developed “bottleneck”-free PS was tested via filling the pores with silver nanoparticles, indicating its potential use as a template for the fabrication of nanoparticle arrays.

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Synthesis and study of conductivity behaviour of blended conducting polymer films irradiated with swift heavy ions of silicon

Current Applied Physics ◽

10.1016/s1567-1739(02)00210-9 ◽

2003 ◽

Vol 3 (2-3) ◽

pp. 247-250 ◽

Cited By ~ 12

Author(s):

Prashant Sonar ◽

Amit L Sharma ◽

Amita Chandra ◽

Klaus Muellen ◽

Alok Srivastava

Keyword(s):

Conducting Polymer ◽

Polymer Films ◽

Heavy Ions ◽

Swift Heavy Ions ◽

Conductivity Behaviour ◽

Conducting Polymer Films

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Growth of polymer films on compound semiconductors and dry etching process

Journal of Applied Physics ◽

10.1063/1.325720 ◽

1979 ◽

Vol 50 (10) ◽

pp. 6567-6569 ◽

Cited By ~ 14

Author(s):

M. Aktik ◽

Y. Segui ◽

Bui Ai

Keyword(s):

Polymer Films ◽

Compound Semiconductors ◽

Dry Etching ◽

Etching Process

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Specimen Preparation of Near Surface Ion Irradiated Samples

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100117820 ◽

1985 ◽

Vol 43 ◽

pp. 170-171

Author(s):

K. F. Russell ◽

L. L. Horton

Keyword(s):

Radiation Damage ◽

Heavy Ions ◽

Target Material ◽

Metal Alloys ◽

Specimen Surface ◽

Specimen Preparation ◽

Particle Accelerators ◽

Near Surface ◽

Graaff Accelerator ◽

Van De Graaff

Beams of heavy ions from particle accelerators are used to produce radiation damage in metal alloys. The damaged layer extends several microns below the surface of the specimen with the maximum damage and depth dependent upon the energy of the ions, type of ions, and target material. Using 4 MeV heavy ions from a Van de Graaff accelerator causes peak damage approximately 1 μm below the specimen surface. To study this area, it is necessary to remove a thickness of approximately 1 μm of damaged metal from the surface (referred to as “sectioning“) and to electropolish this region to electron transparency from the unirradiated surface (referred to as “backthinning“). We have developed electropolishing techniques to obtain electron transparent regions at any depth below the surface of a standard TEM disk. These techniques may be applied wherever TEM information is needed at a specific subsurface position.

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