Anomalous magnetic behavior of iron thin films prepared by DC sputtering at very low temperatures

2000 ◽  
Vol 43 (10) ◽  
pp. 919-923 ◽  
Author(s):  
A Muñoz-Martı́n ◽  
C Prieto ◽  
C Ocal ◽  
J.L Martı́nez
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Magnetic Behavior ◽  
Dc Sputtering

STUDY OF THE ELECTRODYNAMIC RESPONSE OF SmBa2Cu3O7-δ THIN FILMS IN THE MICROWAVE REGION

2003 ◽  
Vol 17 (04n06) ◽  
pp. 942-947
Author(s):  
G. LAMURA ◽  
E. DI GENNARO ◽  
A. ANDREONE ◽  
M. BOFFA ◽  
A. M. CUCOLO
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Surface Resistance ◽  
Magnetic Penetration Depth ◽  
Critical Temperatures ◽  
Microwave Region ◽  
Dc Sputtering ◽  
Linear Behavior ◽  
Magnetic Penetration ◽  
Dc Sputtering Technique

We present some experimental results on the temperature dependence of the surface resistance Rs and magnetic penetration depth λ of thin films of SmBa 2 Cu 3 O 7-δ. The samples, 0.25 μm thick, were grown by a dc sputtering technique on (100) K LaAlO 3 single crystal substrates, with critical temperatures ranging between 87 and 88 K Accurate measurements af the surface impedance Zs were performed down to 4 K by means of a dielectrically loaded cavity operating in the microwave region (20 GHz). Both λ and Rs show a monotonic temperature behavior, with no evidence of low temperature up-turn characteristic of other rare earth based cuprates like GdBa 2 Cu 3 O 7-δ. At low temperatures, we observed am almost linear behavior of λ with a slope of ~ 0.3 nm/K up to 25 K, as expected in a d-wave pairing scenario. The real part of complex conductivity σ1, shows a bump at around 40 K, in agreement with previous reports.

Magnetic behavior of oxidized iron thin films prepared by sputtering at very low temperatures

2001 ◽  
Vol 482-485 ◽  
pp. 1095-1100 ◽  
Author(s):  
A. Muñoz-Martı́n ◽  
C. Prieto ◽  
C. Ocal ◽  
J.L. Martı́nez ◽  
J. Colino
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Magnetic Behavior ◽  
Oxidized Iron

Microstructure of YBa2Cu3O7-x thin films deposited by dc sputtering

1989 ◽  
Vol 47 ◽  
pp. 172-173
Author(s):  
O. Eibl ◽  
G. Gieres ◽  
H. Behner
Keyword(s):  
Thin Films ◽  
Cross Sections ◽  
Intermediate Layer ◽  
Amorphous State ◽  
Critical Currents ◽  
Dc Sputtering ◽  
State Process ◽  
Diffraction Patterns ◽  
Film Substrate ◽  
Substrate Temperatures

The microstructure of high-Tc YBa2Cu3O7-X thin films deposited by DC-sputtering on SrTiO3 substrates was analysed by TEM. Films were either (i) deposited in the amorphous state at substrate temperatures < 450°C and crystallised by a heat treatment at 900°C (process 1) or (ii) deposited at around 740°C in the crystalline state (process 2). Cross sections were prepared for TEM analyses and are especially useful for studying film substrate interdiffusion (fig.1). Films deposited in process 1 were polycristalline and the grain size was approximately 200 nm. Films were porous and the size of voids was approximately 100 nm. Between the SrTiO3 substrate and the YBa2Cu3Ox film a densly grown crystalline intermediate layer approximately 150 nm thick covered the SrTiO3 substrate. EDX microanalyses showed that the layer consisted of Sr, Ba and Ti, however, did not contain Y and Cu. Crystallites of the layer were carefully tilted in the microscope and diffraction patterns were obtained in five different poles for every crystallite. These patterns were consistent with the phase (Ba1-XSrx)2TiO4. The intermediate layer was most likely formed during the annealing at 900°C. Its formation can be understood as a diffusion of Ba from the amorphously deposited film into the substrate and diffusion of Sr from the substrate into the film. Between the intermediate layer and the surface of the film the film consisted of YBa2Cu3O7-x grains. Films prepared in process 1 had Tc(R=0) close to 90 K, however, critical currents were as low as jc = 104A/cm2 at 77 K.

ANOMALOUS MAGNETIZATION PROCESSES AT LOW TEMPERATURES IN COMPOSITIONALLY MODULATED Co/Mn THIN FILMS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1753-C8-1754
Author(s):  
H. Sakakima ◽  
M. Tessier ◽  
R. Krishnan ◽  
E. Hirota
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Magnetization Processes

Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

2009 ◽  
Vol 94 (22) ◽  
pp. 222110 ◽  
Author(s):  
S. S. N. Bharadwaja ◽  
C. Venkatasubramanian ◽  
N. Fieldhouse ◽  
S. Ashok ◽  
M. W. Horn ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Charge Carrier ◽  
Vanadium Oxide ◽  
Transport Mechanism ◽  
Oxide Thin Films ◽  
Hopping Transport ◽  
Dc Sputtering ◽  
Pulsed Dc ◽  
Vanadium Oxide Thin Films

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition

Study of the Properties of ZnO:Zn Thin Films Obtained from ZnO/Zn/ZnO Structure Deposited by DC Sputtering

2012 ◽  
Vol 12 (12) ◽  
pp. 9234-9237 ◽  
Author(s):  
M. A. Vasquez-A. ◽  
Goiz O. ◽  
R. Baca-Arroyo ◽  
J. A. Andraca-Adame ◽  
G. Romero-Paredes ◽  
...  
Keyword(s):  
Thin Films ◽  
Dc Sputtering

Hydrothermal synthesis of heteroepitaxial Pb(ZrxTi1−x)O3 thin films at 90–150 °C

1997 ◽  
Vol 12 (5) ◽  
pp. 1176-1178 ◽  
Author(s):  
A. T. Chien ◽  
J. S. Speck ◽  
F. F. Lange
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
High Dielectric Constant ◽  
Ambient Pressure ◽  
Random Access ◽  
Random Access Memory ◽  
Molar Ratio ◽  
Access Memory ◽  
Eds Analysis ◽  
High Dielectric

Pb(ZrxTi1−x)O3 and PbZrO3 heteroepitaxial thin films were produced in an aqueous solution (10 M KOH) at ambient pressure and low temperatures (90–150 °C) on (001) SrTiO3 and LaAlO3 single crystal substrates. Growth of the Pb(ZrxTi1−x)O3 and PbZrO3 thin films initiates by the formation of {100} faceted islands. Energy dispersive spectroscopy (EDS) analysis of the Pb(ZrxTi1−x)O3 thin film shows that the Zr: Ti ratio is 45: 56, nearly identical to the molar ratio of the precursors. This route might provide a viable low temperature alternative for the formation of high dielectric constant thin films for applications such as dynamic random access memory (DRAM).

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