scholarly journals Studies of Crystal Imperfections in Ice with Reference to the Growth Process by the use of X-Ray Diffraction Topography and Divergent Laue Method

1978 ◽  
Vol 21 (85) ◽  
pp. 409-418 ◽  
Author(s):  
Yukiko Mizuno

Abstract This paper presents studies on crystal imperfections including basal and non-basal dislocations, small-angle grain boundaries, stacking faults, and dislocation networks in ice using both X-ray diffraction and Laue techniques; these studies examined the growth process or origin of the ice, i.e. ice from glaciers, ice grown from the melt, or ice formed by sublimation. Several hoar crystals were found to be perfect, dislocation-free crystals, this may be due to their very slow growth rate. Dislocations and Shockley-type stacking faults were observed in some crystals. Dislocation density of a hoar crystal is very large at the point at which it started to grow, but away from this region the density becomes so small that no dislocation can be seen. The arrangement and structure of dislocations around vapour figures were also studied by means of X-ray diffraction topography. It was found that the dislocation density is high along the periphery of the vapour hexagon and that the great majority of dislocations within the hexagon are running from its centre towards the vertices or sides of the hexagon. Long screw dislocations with Burgers vector c <0001> were observed in a tabular ice which was formed artificially at a very slight degree of supercooling. The behaviour of dislocations in ice subjected to a tensile stress was studied by the use of the divergent X-ray technique which gives both enlarged Laue spots and a transmission pattern in the same photograph.

1978 ◽  
Vol 21 (85) ◽  
pp. 409-418 ◽  
Author(s):  
Yukiko Mizuno

AbstractThis paper presents studies on crystal imperfections including basal and non-basal dislocations, small-angle grain boundaries, stacking faults, and dislocation networks in ice using both X-ray diffraction and Laue techniques; these studies examined the growth process or origin of the ice, i.e. ice from glaciers, ice grown from the melt, or ice formed by sublimation. Several hoar crystals were found to be perfect, dislocation-free crystals, this may be due to their very slow growth rate. Dislocations and Shockley-type stacking faults were observed in some crystals. Dislocation density of a hoar crystal is very large at the point at which it started to grow, but away from this region the density becomes so small that no dislocation can be seen. The arrangement and structure of dislocations around vapour figures were also studied by means of X-ray diffraction topography. It was found that the dislocation density is high along the periphery of the vapour hexagon and that the great majority of dislocations within the hexagon are running from its centre towards the vertices or sides of the hexagon. Long screw dislocations with Burgers vector c <0001> were observed in a tabular ice which was formed artificially at a very slight degree of supercooling. The behaviour of dislocations in ice subjected to a tensile stress was studied by the use of the divergent X-ray technique which gives both enlarged Laue spots and a transmission pattern in the same photograph.


Author(s):  
Chuxin Zhou ◽  
L. W. Hobbs

One of the major purposes in the present work is to study the high temperature sulfidation properties of Nb in severe sulfidizing environments. Kinetically, the sulfidation rate of Nb is satisfactorily slow, but the microstructures and non-stoichiometry of Nb1+αS2 challenge conventional oxidation/sulfidation theory and defect models of non-stoichiometric compounds. This challenge reflects our limited knowledge of the dependence of kinetics and atomic migration processes in solid state materials on their defect structures.Figure 1 shows a high resolution image of a platelet from the middle portion of the Nb1+αS2 scale. A thin lamellar heterogeneity (about 5nm) is observed. From X-ray diffraction results, we have shown that Nb1+αS2 scale is principally rhombohedral structure, but 2H-NbS2 can result locally due to stacking faults, because the only difference between these 2H and 3R phases is variation in the stacking sequence along the c axis. Following an ABC notation, we use capital letters A, B and C to represent the sulfur layer, and lower case letters a, b and c to refer to Nb layers. For example, the stacking sequence of 2H phase is AbACbCA, which is a ∼12Å period along the c axis; the stacking sequence of 3R phase is AbABcBCaCA to form an ∼18Å period along the c axis. Intergrowth of these two phases can take place at stacking faults or by a shear in the basal plane normal to the c axis.


1994 ◽  
Vol 376 ◽  
Author(s):  
M. Vrána ◽  
P. Klimanek ◽  
T. Kschidock ◽  
P. Lukáš ◽  
P. Mikula

ABSTRACTInvestigation of strongly distorted crystal structures caused by dislocations, stacking-faults etc. in both plastically deformed f.c.c. and b.c.c. metallic materials was performed by the analysis of the neutron diffraction line broadening. Measurements were realized by means of the high resolution triple-axis neutron diffractometer equipped by bent Si perfect crystals as monochromator and analyzer at the NPI Řež. The substructure parameters obtained in this manner are in good agreement with the results of X-ray diffraction analysis.


Nature ◽  
1964 ◽  
Vol 201 (4914) ◽  
pp. 63-64 ◽  
Author(s):  
R. STEADMAN

1992 ◽  
Vol 242 ◽  
Author(s):  
T. D. Moustakas ◽  
R. J. Molnar ◽  
T. Lei ◽  
G. Menon ◽  
C. R. Eddy

ABSTRACTGaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.


2017 ◽  
Vol 26 (12) ◽  
pp. 127309 ◽  
Author(s):  
Yuan-Hao Miao ◽  
Hui-Yong Hu ◽  
Xin Li ◽  
Jian-Jun Song ◽  
Rong-Xi Xuan ◽  
...  

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