A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

1992 ◽  
Vol 242 ◽  
Author(s):  
T. D. Moustakas ◽  
R. J. Molnar ◽  
T. Lei ◽  
G. Menon ◽  
C. R. Eddy
Keyword(s):  
Surface Morphology ◽  
Low Temperatures ◽  
Smooth Surface ◽  
Growth Process ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Sapphire Substrates ◽  
Growth Method ◽  
Step Growth

ABSTRACTGaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.

Structural Characterization of the Growth Front of 4H-SiC Boules Grown Using the Physical Vapor Transport Growth Method

2018 ◽  
Vol 924 ◽  
pp. 15-18
Author(s):  
Masashi Sonoda ◽  
Kentaro Shioura ◽  
Takahiro Nakano ◽  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
...  
Keyword(s):  
High Resolution ◽  
Surface Morphology ◽  
Defect Structure ◽  
Growth Front ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Growth Method

The defect structure at the growth front of 4H-SiC boules grown using the physical vapor transport (PVT) method has been investigated using high resolution x-ray diffraction and x-ray topography. The crystal parameters such as the c-lattice constant exhibited characteristic variations across the growth front, which appeared to be caused by variation in surface morphology of the as-grown surface of the boules rather than the defect structure underneath the surface. X-ray topography also revealed that basal plane dislocations are hardly nucleated at the growth front during PVT growth of 4H-SiC crystals.

Epitaxial Relationships and Electrical Properties of SrTiO3 Films on Various Thin -Fluoride/Si Structures

1994 ◽  
Vol 341 ◽  
Author(s):  
B. K. Moon ◽  
H. Ishiwara
Keyword(s):  
Buffer Layer ◽  
Buffer Layers ◽  
Breakdown Field ◽  
X Ray Diffraction ◽  
Dielectric Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Initial Stage ◽  
Growth Method ◽  
Step Growth

AbstractCrystalline strontium titanate (SrTiO3:STO) films were grown on Si(111) and Si(100) substrates using thin SrF2 and CaF2 buffer layers by two-step growth method. In all cases, fluoride buffer layers were effective in growing STO films on Si substrates, which is probably due to that fluoride buffer layers have excellent crystallinity and they can prevent formation of amorphous SiO2 layers on Si substrates at the initial stage of the STO deposition. It was found from X-ray diffraction and pole-figure measurements that (110)-oriented STO crystallites with three different positions to the substrate were grown on Si(111) substrates for both SrF2 and CaF2 buffer layers. In constrast, (100)-oriented STO films with 12-fold symmetry were grown on a SrF2/Si(100), and mixed (110)- and (100)-oriented STO crystallites were grown on a CaF2/Si(100) structure. It was concluded from these results that better crystallinity of STO films can be obtained on the SrF2 buffer layer in case of Si(111) and on the CaF2 buffer layer in case of Si(100). It was also found from I-V and C-V analyses that the STO films have good insulating and dielectric characteristics. For a SrTiO3 film on SrF2/Si(111) structure, the best values of breakdown field (at l.μA/cm2), resistivity (at IMV/cm) and dielectric constant were 2.3MV/cm, 8.2 × 1012 Ωcm and 72, respectively.

Heteroepitaxy of GaAs on Si by MOCVD

1987 ◽  
Vol 91 ◽  
Author(s):  
Tetsuo Soga ◽  
Toru Imori ◽  
Masayoshi Umeno
Keyword(s):  
Curvature Radius ◽  
Stress And Strain ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas On Si ◽  
Intermediate Layers ◽  
Growth Method ◽  
Step Growth

ABSTRACTThe stress and strain of GaAs on Si grown by using strained superlattice intermediate layers and a two-step growth method are characterized by the photoluminescence, X-ray diffraction and the curvature radius. The strain of GaAs grown using strained superlattice intermediate layers is smaller than that grown by the two-step growth method.

The Study of CIGS Absorption Layer Grown by Two-Step Growth Method for Thin-Film Solar Cell

2013 ◽  
Vol 418 ◽  
pp. 238-241
Author(s):  
Li Zen Hsieh ◽  
Xi Ming Duan ◽  
Ming Jer Jeng
Keyword(s):  
Thin Film ◽  
Energy Dispersive Spectrometer ◽  
Thin Film Solar Cells ◽  
X Ray Diffraction ◽  
X Ray ◽  
Absorption Layer ◽  
Growth Method ◽  
Thermal Evaporator ◽  
Step Growth ◽  
Selenization Process

Two-step growth method was used for CuInGaSe2,(CIGS) absorption layer in this study. The layer was first deposited by thermal evaporator to use indium and gallium sauces at a vacuum of 5 × 10-6 torr and secondly, the deposited thin film was enclosed in a quartz cartridge for the first selenization. The second selenization process was coated by copper and then annealed again in a furnace. Finding best precursor for thin film solar cells was analyzed by scanning electron microscope (SEM), X-ray diffraction analyzer (XRD) and energy dispersive spectrometer (EDS).

scholarly journals Influence of silicon on growth mechanism of micro-arc oxidation coating on cast Al–Si alloy

2018 ◽  
Vol 5 (7) ◽  
pp. 172428 ◽  
Author(s):  
Huijun Yu ◽  
Qing Dong ◽  
Yang Chen ◽  
Chuanzhong Chen
Keyword(s):  
Surface Morphology ◽  
Adhesive Strength ◽  
Growth Process ◽  
Substrate Surface ◽  
Ceramic Coatings ◽  
Al Alloy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Alloy Substrate ◽  
Micro Arc Oxidation

Micro-arc oxidation (MAO) is a plasma-assisted electrochemistry method to prepare protective ceramic coatings on aluminium alloys. Alloy elements of the Al-alloy substrate, such as Si, Cu, Mg and Li, have effects on the microstructure and composition of the MAO coatings. Usually, silicon distributes in the cast Al–Si alloy substrate as small laths and they cover approximately 10% of the substrate surface. Therefore, their effects on the growth process and microstructure of the MAO coatings are worthy of notice. In the present study, oxide coatings with a thickness of 15–18 µm were prepared on the ZL109 Al–Si alloy by MAO. The phase content, surface morphology and element distribution of the coatings were investigated by X-ray diffraction, grazing incidence X-ray diffraction, scanning electron microscope, and electron probe micro-analysis respectively. The average hardness of the coatings was 622.3 ± 10.2 HV 0.05 . The adhesive strength of the coatings is 40.55 ± 2.55 N, and the adhesion of the coatings could be rated as 5B by tape test according to ASTM D3359-17 standard test methods, which indicated a high adhesive strength between the MAO coating and substrate. The effects of silicon laths on surface morphology and composition of the coatings were discussed, and a model was put forward to describe the growth process of the MAO coatings on cast Al–Si alloys. The authors believe that the high silicon content of the substrate has no adverse influence on the structure and properties of the MAO coating on the ZL109 alloy.

Scallion-Root-Shaped GaN Nanorods Grown by Two-Step Method and Study on their Properties

2013 ◽  
Vol 652-654 ◽  
pp. 197-201
Author(s):  
Yu Ping Cao ◽  
Hai Bo Sun
Keyword(s):  
High Purity ◽  
Photoelectron Spectroscopy ◽  
Low Cost ◽  
Hexagonal Wurtzite Structure ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Band Emission ◽  
Growth Method ◽  
Step Growth

Two-step growth technology to successfully synthesize scallion-root-shaped GaN nanorods was presented in this paper. This growth method is applicable to continuous synthesis a large number of single-crystalline GaN nanorods with a high purity at a low cost. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) are employed to characterize the structure, composition and morphology of as-grown GaN nanorods. The results show that the obtained nanorods are single-crystal GaN with hexagonal wurtzite structure and have a relatively high purity. The diameter of the nanorods is about 500nm with length up to several tens of micrometers. The representative photoluminescence spectra (PL) measured at room temperature exhibited a strong and broad emission peak at 388nm corresponding to the strong-band-emission in wurtzite GaN, indicating that the nanorods have a good emission property. The growth mechanism is also briefly discussed.

A Novel Growth Method for High Quality GaAs/CaF2/Si(111) Structures by Using “Type-A” CaF2 Film

1991 ◽  
Vol 237 ◽  
Author(s):  
H. Mizukami ◽  
A. Ono ◽  
K. Tsutsui ◽  
S. Furukawa
Keyword(s):  
Surface Morphology ◽  
Crystallographic Orientation ◽  
Type A ◽  
Epitaxial Relationship ◽  
High Quality ◽  
Gaas Films ◽  
Growth Method ◽  
Step Growth ◽  
Relationship Of

ABSTRACTControl of epitaxial relationship of CaF2 films grown on Si(111) substrates was considered to be important to improve surface morphology and crystallini ty of GaAs films on CaF2/Si(111) structures. We successfully grew CaF2 films with the “type-A” epitaxial relationship on Si(111) substrates, that is, the crystallographic orientation of the CaF2 films were aligned in the same direction as that of the Si(111) substrates. These “type-A” CaF2 films were grown by a two step growth method. It was found that surface morphology of GaAs films on the CaF2/Si(111) structures was drastically improved by growth of the “type-A” CaF2 films.

scholarly journals Growth of High Quality GaN on Si (111) Substrate by Using Two-Step Growth Method for Vertical Power Devices Application

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 234
Author(s):  
Jae-Hoon Lee ◽  
Ki-Sik Im
Keyword(s):  
Reference Sample ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Power Devices ◽  
X Ray ◽  
Growth Method ◽  
Step Growth ◽  
Gan On Si ◽  
Growth Methods ◽  
Gan Film

A crack-free GaN film grown on 4-inch Si (111) substrate is proposed using two-step growth methods simply controlled by both III/V ratio and pressure. Two-step growth process is found to be effective in compensating the strong tensile stress in the GaN layer grown on Si substrate. The high-resolution X-ray diffraction (XRD) rocking curves of (002) and (102) planes for the GaN epitaxial layer with two-step growth method are 317 and 432 arcsec, while the corresponding values for the reference sample without two-step growth method are 550 and 1207 arcsec, respectively. The reduced threading dislocation of GaN film with two-step growth method is obtained to be ~2 × 108/cm2, which is attributed to effectively annihilate and bend threading dislocation.

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

scholarly journals Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 823
Author(s):  
Shizheng Yang ◽  
Hongliang Lv ◽  
Likun Ai ◽  
Fangkun Tian ◽  
Silu Yan ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Wafer Level ◽  
X Ray Diffraction ◽  
Nucleation Layer ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Growth Method ◽  
Step Growth ◽  
Microscopy Images

InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of growth temperature of nucleation layer on InP/Si epitaxial growth were investigated systematically. Cross-section morphology, surface morphology and crystal quality were characterized by scanning electron microscope images, atomic force microscopy images, high-resolution X-ray diffraction (XRD), rocking curves and reciprocal space maps. The InP/Si interface and surface became smoother and the XRD peak intensity was stronger with the nucleation layer grown at 350 °C. The Results show that the growth temperature of InP nucleation layer can significantly affect the growth process of InP film, and the optimal temperature of InP nucleation layer is required to realize a high-quality wafer-level InP layers on Si (001).

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