Rem and Tem Studies of Thin Film Growth Dynamics on si Surfaces

1995 ◽  
Vol 404 ◽  
Author(s):  
Hiroki Minoda ◽  
Yasumasa Tanishiro ◽  
Katsumichi Yagi
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Film Growth ◽  
Growth Dynamics ◽  
Thin Film Growth ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Nucleation Size

AbstracA study of surfactant-mediated epitaxy of Ge on Si(111) surfaces was carried out by in-situ transmission electron microscopy (TEM) and reflection electron microscopy (REM). Formation of 3D islands on the Si(111)-In surfaces was suppressed because of a change of critical nucleation size of the 3D islands. It was also found that formation of misfit dislocations at the interface between Si and Ge films was promoted by predeposition of In.

The annealed (0001) α-alumina surface and its influence on thin-film growth

1995 ◽  
Vol 53 ◽  
pp. 336-337
Author(s):  
Michael W. Bench ◽  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Energy Calculations ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Low Energy Electron ◽  
Surface Nature

The growth of semiconductors, superconductors, metals, and other insulators has been investigated using alumina substrates in a variety of orientations. The surface state of the alumina (for example surface reconstruction and step nature) can be expected to affect the growth nature and quality of the epilayers. As such, the surface nature has been studied using a number of techniques including low energy electron diffraction (LEED), reflection electron microscopy (REM), transmission electron microscopy (TEM), molecular dynamics computer simulations, and also by theoretical surface energy calculations. In the (0001) orientation, the bulk alumina lattice can be thought of as a layered structure with A1-A1-O stacking. This gives three possible terminations of the bulk alumina lattice, with theoretical surface energy calculations suggesting that termination should occur between the Al layers. Thus, the lattice often has been described as being made up of layers of (Al-O-Al) unit stacking sequences. There is a 180° rotation in the surface symmetry of successive layers and a total of six layers are required to form the alumina unit cell.

Observation of gold thin film growth with reflection electron microscopy

1990 ◽  
Vol 187 (1) ◽  
pp. 133-140 ◽  
Author(s):  
Terrence Jach ◽  
Gary Hembree ◽  
L.B. Holdeman
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Gold Thin Film ◽  
Reflection Electron Microscopy

Step structure and 5×5 restructure of annealled LaAlO3 {100} - a substrate for electroceramic thin film growth

1995 ◽  
Vol 53 ◽  
pp. 346-347
Author(s):  
Z. L. Wang ◽  
A.J. Shapiro
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Film Growth ◽  
Thin Film Growth ◽  
Transmission Electron ◽  
The Face ◽  
Reflection Electron Microscopy ◽  
Electron Microscopes ◽  
Substrate Surfaces ◽  
Microscopy Techniques

Nucleation and growth of thin films are strongly affected by the microstructures of the substrate surfaces. Although LaA1O3 {100} surfaces have been widely used as substrates for growing high Tc superconductor and ferroelectric thin films, the surface structure of the material has not been extensively analyzed using electron microscopy techniques. In this paper, reflection electron microscopy (REM) [1] is applied to examine the structures of LaA1O3 {100}. REM experiments were carried out at 300 kV and 120 kV in transmission electron microscopes. The {100} surfaces were mechanically polished and subsequently annealed at 1500 °C for 20 h in air. The LaA1O3 unit cell is the distorted-perovskite structure with lattice constant a = b = c = 0.3788 nm and α = β = γ = 90.066°, in which the La+3 ion locates at (000), the A1+3 ion at (0.5 0.5 0.5), and the O−2 ions at the face-centers {0.5 0.5 0}.

Reflection electron microscopy study of thin film growth

1993 ◽  
Vol 228 (1-2) ◽  
pp. 12-17 ◽  
Author(s):  
Katsumichi Yagi ◽  
Hiroki Minoda ◽  
Masashi Shima
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Film Growth ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Thin Film Growth ◽  
Reflection Electron Microscopy

scholarly journals Resolving the Evolution of Atomic Layer-Deposited Thin-Film Growth by Continuous In Situ X-Ray Absorption Spectroscopy

2021 ◽  
Author(s):  
Xiaohui Qu ◽  
Danhua Yan ◽  
Ruoshui Li ◽  
Jiajie Cen ◽  
Chenyu Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
Absorption Spectroscopy ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
X Ray ◽  
X Ray Absorption

In situ work function study of oxidation and thin film growth on clean surfaces

1999 ◽  
Vol 433-435 ◽  
pp. 770-774 ◽  
Author(s):  
I.D Baikie ◽  
U Petermann ◽  
B Lägel
Keyword(s):  
Thin Film ◽  
Work Function ◽  
Film Growth ◽  
Thin Film Growth ◽  
Function Study
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