Cross sectional Tem Sample Preparation Using E-Beam Lithography and Reactive ion Etching

1997 ◽  
Vol 480 ◽  
Author(s):  
Hyun-Jin Cho ◽  
Peter B. Griffin ◽  
James D. Plummer
Keyword(s):  
Electron Microscopy ◽  
Reactive Ion Etching ◽  
High Resolution Electron Microscopy ◽  
Ion Milling ◽  
Cross Sectional ◽  
Simple Method ◽  
Ion Etching ◽  
Resolution Electron ◽  
Specific Device ◽  
Short Time

AbstractA simple method to make cross sectional TEM samples of Si and GaAs semiconductor devices at specific device locations using electron beam (e-beam) lithography and reactive ion etching is described. The basic idea of this technique is to form pillar or line type patterns thin enough to be transparent to electron beams used in transmission electron microscopy. Since the entire process is conducted in the semiconductor fabrication facility, reliable samples were efficiently obtained within a short time without mechanical polishing or ion milling. High Resolution Electron Microscopy (HREM) images of SiGe and GaAs multilayer structures were obtained by this method. Using the alignment function of the e-beam lithography system, cross sectional TEM samples at specific locations of MOS transistors were obtained. The samples were thin enough to obtain HREM images of atomic level defects in the device.

Preparation of Cross Sectional TEM Samples Using Lithographic Techniques and Reactive Ion Etching

1990 ◽  
Vol 199 ◽  
Author(s):  
Jeffrey T. Wetzel ◽  
K. L. Kavanagh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Reactive Ion Etching ◽  
Limited Range ◽  
Ion Milling ◽  
Cross Sectional ◽  
Ion Etching ◽  
Lithographic Patterning ◽  
Transmission Electron ◽  
Transparent Area

ABSTRACTThis paper summarizes methods used to create cross-sectional samples for transmission electron microscopy and introduces another variant of the technique all of which rely upon some combination of lithographic patterning and reactive ion etching. The basic idea pursued in using these techniques was to form, from a preselected location, samples that had a large transparent area without use of mechanical polishing or ion milling. Samples were successfully prepared in this manner, but room for improvement remains due to the limited range of diffraction conditions available for imaging or diffraction pattern formation.

Interfacial Atomic Structures During Cobalt Silicidation

1990 ◽  
Vol 202 ◽  
Author(s):  
A. Catana ◽  
P.E. Schmid
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Type B ◽  
Cross Sectional ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Predominant Orientation ◽  
Lower Temperature

ABSTRACTHigh Resolution Electron Microscopy (HREM) and image calculations are combined to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. The samples are prepared by UHV e-beam evaporation of Co layers (2 nm) followed by annealing at 300°C or 400°C. Cross-sectional observations at an atomic scale show that the silicidation of Co at the lower temperature yields epitaxial CoSi/Si domains such that [111]Si // [111]CoSi and <110>Si // <112>CoSi. At about 400°C CoSi2 nucleates at the CoSi/Si interface. During the early stages of this chemical reaction, an epitaxial CoSi/CoSi2/Si system is observed. The predominant orientation is such that (021) CoSi planes are parallel to (220) CoSi2 planes, the CoSi2/Si interface being of type B. The growth of CoSi2 is shown to proceed at the expense of both CoSi and Si.

Chemical and Structural Analysis of Nitridated Sapphire

1997 ◽  
Vol 482 ◽  
Author(s):  
Y. Cho ◽  
S. Rouvimov ◽  
Y. Kim ◽  
Z. Liliental-Weber ◽  
E. R. Weber
Keyword(s):  
Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Structural Analysis ◽  
Photoelectron Spectroscopy ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Resolution Electron

AbstractThe incorporation of nitrogen into sapphire substrates during nitridation was studied by xray photoelectron spectroscopy (XPS). An increase in the intensity of nitrogen 1s peak in XPS was observed upon longer nitridation. The surface morphology of the substrates was characterized by atomic force microscopy (AFM). High resolution electron microscopy (HREM) was employed for structural analysis. The cross sectional TEM showed a thin layer of AlN buried between amorphous AlNxO1−x and sapphire. This is the first direct observation of AlN on sapphire. The TEM images show a deeper penetration depth of nitrogen into a longer nitridated sapphire.

Study of the growth mechanism of highly in-plane aligned α-axis YBa2Cu3O7−x thin films on LaSrGaO4 substrate by high resolution electron microscopy

1996 ◽  
Vol 11 (12) ◽  
pp. 2951-2954 ◽  
Author(s):  
J. G. Wen ◽  
S. Mahajan ◽  
H. Ohtsuka ◽  
T. Morishita ◽  
N. Koshizuka
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Plan View ◽  
Oriented Film ◽  
Resolution Electron ◽  
Average Size

Highly in-plane aligned α-axis YBa2Cu3O7−x thin films deposited on (100) LaSrGaO4 substrates by a self-template method were studied by high-resolution electron microscopy along three orthogonal 〈100〉 axes of the substrate. Plan-view images confirm that the majority of the film preferentially aligns across the entire substrate except for very few misaligned domains with average size 10 nm2. Cross-sectional images along the [100] orientation of YBa2Cu3O7−x reveal that in-plane aligned α-axis YBa2Cu3O7−x is grown on a template layer dominated by c-axis oriented film. This strongly suggests that the in-plane alignment of α-axis YBa2Cu3O7−x thin films on (100) LaSrGaO4 substrates is governed by the different stresses along the b and c axes of the substrate. Cross-sectional images along [001] of the YBa2Cu3O7—x thin film reveal that the 90° domains easily nucleate in the region between α-axis YBa2Cu3O7—x and the YBa4Cu3Ox phase. Cracks along the (001) plane of YBa2Cu3O7−x are found to be due to the large mismatch between the c parameters of the thin film and substrate.

Fine structure of crack in ceramics

1984 ◽  
Vol 42 ◽  
pp. 402-403
Author(s):  
Hiroshi Kakibayashi ◽  
Fumio Nagata
Keyword(s):  
Electron Microscopy ◽  
Fine Structure ◽  
Heat Conduction ◽  
Silicon Nitride ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Nitrogen Atmosphere ◽  
Ion Etching ◽  
Resolution Electron ◽  
Shock Resistance

Many kinds of ceramics have been developed providing enough insulation, heat conduction or shock resistance. For the characteristics of strong toughness of the ceramics, movements of cracks by applying a force are noteworthy, because most ceramics are hardly distorted.In the present works, behavior of cracks in ceramics is observed with high resolution electron microscopy. Silicon nitride (Si3N4) ceramics were made by sintering in nitrogen atmosphere at 1800°C. Some Y2O3 and AlN were added to assist the sintering. A piece of the ceramics was sliced and polished mechanically untill 20μm in thickness. The specimen was mounted on a single hole grid, and was thinned with an ion etching equipment to be thin enough to observe.

A HREM study of V/Al2O3 interface

1992 ◽  
Vol 50 (1) ◽  
pp. 146-147
Author(s):  
Y. Ikuhara ◽  
P. Pirouz ◽  
A. H. Heuer ◽  
S. Yadavalli ◽  
C. P. Flynn
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
High Resolution ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Interface Structure ◽  
Cross Sectional ◽  
Plan View ◽  
Resolution Electron

The interface structure between vanadium and the R-plane of sapphire (α-Al2O3) was studied by conventional and cross-sectional high resolution electron microscopy (HREM) to clarify the atomic structure of the interface.A 57 nm thick vanadium film was deposited on the (1102) (R) plane of sapphire by molecular beam epitaxy (MBE) at a substrate temperature of 920 K in a vacuum of 10-10torr. The HREM observations of the interface were done from three directions: two cross-sectional views (parallel to [0221]Al2O3 and [1120]Al2O3) and a plan view (parallel to [2201]Al2O3) by a top-entry JEOL 4000EX electron microscope (400 kV).

Dependence of Mo/Si Multilayer Morphology on Deposition Angle

1989 ◽  
Vol 160 ◽  
Author(s):  
Yuanda Cheng ◽  
Mary Beth Stearns ◽  
David J. Smith
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Substrate Temperature ◽  
High Resolution Electron Microscopy ◽  
Growth Conditions ◽  
Columnar Growth ◽  
Cross Sectional ◽  
Resolution Electron ◽  
Deposition Angle

AbstractStudies have been made of the dependence of the structure on the deposition angle and the substrate temperature of a series of Mo/Si multilyers fabricated in a UHV system by e-beam evaporation. The detailed morphology was determined by cross-sectional high resolution electron microscopy. Columnar growth in the crystalline Mo layers was found to follow the tangent rule. The overall quality of the multilayers was found to depend strongly on the growth conditions.

Heteroepitaxial Diamond Formed on Silicon Wafer Observed by High Resolution Electron Microscopy

1994 ◽  
Vol 357 ◽  
Author(s):  
Jie Yang ◽  
Zhangda Lin ◽  
Li-Xin Wang ◽  
Sing Jin ◽  
Ze Zhang
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
Diamond Crystals ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Hot Filament

AbstractDiamond films with high preferential orientation (111) on silicon (100) crystalline orientation substrates had been obtained by hot-filament chemical vapor deposition (HFCVD) method. X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and high-resolution cross-sectional transmission electron microscopy (HREM) are used to characterizate the structure and morphology of the synthesised diamond films. Diamond (111) plans had been local grown epitaxially on the Si(100) substrate observed by HREM. SEM photographes show that plane diamond crystals have been obtained.

Structural imaging of polytypoids in high Tc oxide superconductors

1989 ◽  
Vol 47 ◽  
pp. 156-157
Author(s):  
R. Ramesh ◽  
E. Wang ◽  
J.M. Tarascon ◽  
G. Thomas
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Liquid Nitrogen Temperature ◽  
High Resolution Electron Microscopy ◽  
Oxide Superconductors ◽  
Ion Milling ◽  
Resolution Electron ◽  
The Matrix ◽  
Diffraction Patterns ◽  
Processing Techniques

The structure of the superconducting polytypoid in the newly discovered high Tc super conducting system, Pb2Sr2Cu2Oy has been examined by high resolution electron microscopy, electron diffraction and xray microanalysis. High resolution imaging has shown the presence of the Pb2Sr2Cu2Oy at the grain boundaries. In analogy to the Bi-Ca-Sr-Cu-O(BCSCO)system, it is suggested that this polytypoid could have a lower transition temperature compared to the matrix. This may explain the steps in the resistivity plot. It is also shown that complex cationic ordering, such as replacement of Sr by Ca and/or Y, could lead to extra reflections in the diffraction patterns.Pb-Sr-(Ca-RE)-Cu-O sintered samples were prepared by standard solid state processing techniques. Samples were prepared under 1% flowing oxygen. Samples for electron microscopy were prepared by argon ion milling at liquid nitrogen temperature at 6kV. High resolution electron microscopy was carried out in the Berkeley Atomic Resolution Microscope at 800kV.

HREM of epitaxially grown Fe/TiO2 and Cu/TiO2 interfaces

1993 ◽  
Vol 51 ◽  
pp. 834-835
Author(s):  
P. Lu ◽  
F. Cosandey
Keyword(s):  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Select Area Diffraction ◽  
Ion Milling ◽  
Cross Sectional ◽  
Oxide Interfaces ◽  
Atomic Structures ◽  
Resolution Electron ◽  
High Resolution Electron Microscope ◽  
Standard Techniques

High-resolution electron microscopy (HREM) has been used to provide information on atomic structures of metal/oxide interfaces, which are of both scientific and technological interest. In this report, we present results of a study on Fe/TiO2 and Cu/TiO2 interfaces by HREM. The Fe/TiO2 and Cu/TiO2 interfaces were formed by vapor deposition of Fe and Cu on TiO2 (110) surface, respectively, in a UHV chamber with a base pressure of ∽1x10−10 torr. Cross sectional HREM specimens were prepared using standard techniques involving mechanical polishing, dimpling and ion-milling. The samples were examined in an Topcon-002B high-resolution electron microscope. HREM simulations were performed using the EMS program.Figs, 1a and 1b show a HREM micrograph and a select area diffraction pattern of Fe/TiO2 interface, respectively, taken along the TiO2 [001] direction. From Fig.la and Fig.1b, the following orientation relationship is obtained: [001]Fe//[001]TiO2 and (100)Fe//(110)TiO2. With this orientation, there is about 12.6% lattice misfitt along the TiO2 [10] direction.

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