Demonstration of Solid State Electron Optical Devices: Pixelated Fresnel Phase Lenses

1997 ◽  
Vol 3 (S2) ◽  
pp. 1037-1038
Author(s):  
Y. Ito ◽  
A.L. Bleloch ◽  
L.M. Brown

The ability to produce features of nanometer scale offers the possibility of phase manipulation of electron waves. The first conclusive results of phase manipulation by nanometer-scale diffraction gratings directly cut by the finely focused electron beam in a scanning transmission electron microscope (STEM) have already been demonstrated. This was achieved by using a grating with a “wedge” profile. This produced an asymmetrical diffraction pattern (in violation of Friedel's law). This violation is expected only if the grating acts mostly as a strong phase object. In this paper, a demonstration of solid state Pixelated Fresnel Phase (PFP) lenses for electrons will be presented. An array of these electron lenses can be easily formed and may be utilized, for example, as compact electron-beam forming lenses for parallel electron beam lithography.In general, an incident plane wave traveling along the optic axis of a lens experiences a phase shift. A conventional Fresnel phase lens, consisting of concentric zones with a modulo of 2π phase structure, focuses an incoming electron plane wave to its focal point.

1993 ◽  
Vol 321 ◽  
Author(s):  
Tan-Chen Lee ◽  
Robert J. Soave ◽  
Yosi Y. Shacham-Diamand ◽  
John Silcox

ABSTRACTAmorphous GeSi films with different thicknesses and oxygen contents were electron beam evaporated onto Si (KK)) wafers and wet oxidized at 900 °C for 30 Min. If there was no oxygen in the as-deposited film, an epitaxial GeSi film would be grown after wet oxidation. For the samples with oxygen, epitaxial growth broke down when the thickness of the epitaxy exceeded about 200 A and polycrystalline GeSi films were formed. A dedicated STEM (scanning transmission electron Microscope) was used to characterize the sample after oxidation. STEM BF (bright field), ADF (annular dark field), and energy filtered images revealed the presence of small oxide particles in the polycrystalline GeSi films. X-ray microprobe analysis with a windowless detector was employed to identify the oxide particles. The failure of the epitaxy is explained by the random nucleation and growth of GeSi grains on the oxide particles.


2022 ◽  
pp. 1-9
Author(s):  
Tiarnan Mullarkey ◽  
Jonathan J. P. Peters ◽  
Clive Downing ◽  
Lewys Jones

In the scanning transmission electron microscope, fast-scanning and frame-averaging are two widely used approaches for reducing electron-beam damage and increasing image signal noise ratio which require no additional specialized hardware. Unfortunately, for scans with short pixel dwell-times (less than 5 μs), line flyback time represents an increasingly wasteful overhead. Although beam exposure during flyback causes damage while yielding no useful information, scan coil hysteresis means that eliminating it entirely leads to unacceptably distorted images. In this work, we reduce this flyback to an absolute minimum by calibrating and correcting for this hysteresis in postprocessing. Substantial improvements in dose efficiency can be realized (up to 20%), while crystallographic and spatial fidelity is maintained for displacement/strain measurement.


Author(s):  
M.E. Mochel ◽  
C. J. Humphreys ◽  
J. M. Mochel ◽  
J. A. Eades

Holes 20 Å in diameter and fine lines 20 Å wide can be cut in the metal-β-aluminas using the 10 Å electron beam of the Vacuum Generators, HB5 scanning transmission electron microscope. The minimum current density required for cutting was 103 amp/cm2. Electron energies of 40,60,80,100 keV were used.This technique has higher resolution than current lithography methods and is direct, requiring no chemical development. The width of isolated lines made on solid substrates is currently about .1μm (Ahmed and McMahon, 1981) and .03μm (Jackel et al., 1980). M. Isaacson and A. Murry have carried out electron beam writing on NaCl crystals supported on a carbon film on the scale we report here.In our case uniform 20Å holes and lines can be cut through self-supporting 1000A thick slabs of sodium-β-alumina to provide very high electron contrast. Once cut, the β-aluminas are stable and will tolerate exposure to air without degradation of the electron cut patterns. They may be used directly as masks (eg. for ion implantation). We believe they could be cut on the substrate with no damage to the underlying material.


2021 ◽  
Vol 51 (1) ◽  
Author(s):  
Gwangyeob Lee ◽  
Seung-Hyub Baek ◽  
Hye Jung Chang

AbstractWe demonstrate a fabrication of an atomically controlled single-crystal heart-shaped nanostructure using a convergent electron beam in a scanning transmission electron microscope. The delicately controlled e-beam enable epitaxial crystallization of perovskite oxide LaAlO3 grown out of the relative conductive interface (i.e. 2 dimensional electron gas) between amorphous LaAlO3/crystalline SrTiO3.


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