A Study of Amorphous Chalcogenides by Electron Microscopy and Analysis

1998 ◽  
Vol 4 (S2) ◽  
pp. 714-715
Author(s):  
A. G. Fitzgerald ◽  
K. Mietzsch
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Diffusion Process ◽  
Electron Beam Lithography ◽  
Interaction Process ◽  
Metal Diffusion ◽  
Process Understanding ◽  
Amorphous Chalcogenides ◽  
Potential Applications ◽  
Beam Interaction

Amorphous chalcogenides films coated with certain metals are known to possess a remarkable sensitivity to radiation. Based on these effects they have found several important applications in the production of microcircuits, e.g. as resists in photo- and electron beam lithography. A variety of chalcogenides in combination with a range of metals has been extensively investigated with regard to potential applications in the fabrication of semiconductor devices.The objectives of the present project are to extend knowledge of the behaviour of amorphous chalcogenides in contact with metals. This includes studying the metal diffusion process, understanding the film-electron beam interaction process and evaluating the potential of the metal lines formed by the electron beam in fabrication of photomasks for the production of higher densities of silicon microcircuits.

Formation Of Two-Dimensional Photonic Crystals With Cavities Arrays In Silicon

2016 ◽  
Vol 11 (1) ◽  
pp. 88-93
Author(s):  
Dmitriy Utkin ◽  
Aleksandr Shklyaev ◽  
Fedor Dultsev ◽  
Aleksandr Latyshev
Keyword(s):  
Electron Beam ◽  
Photonic Crystals ◽  
Electron Beam Lithography ◽  
Spatial Distributions ◽  
Two Dimensional ◽  
Interference Effects ◽  
Technological Parameters ◽  
Beam Interaction ◽  
Cavity Array ◽  
Better Than

Specific aspects of finely focused electron beam interaction with the PMMA-950K resist for the fabrication of closely spaced holes having inhomogeneous spatial distributions are studied. The technological parameters for the creation of two-dimensional photonic crystals with microcavities (missing holes) arrays, which allow obtaining the lateral sizes of the structure within the accuracy better than 2 %, in silicon using electron-beam lithography are determined. Such holes fabrication accuracy is thought to be sufficient to study the interference effects of cavity array radiation in twodimensional photonic crystals.

Epitaxial Growth of NiSi2 on (111)Si Inside 0.1-0.6 μM in Size Oxide Openings Prepared by Electron Beam Lithography

1996 ◽  
Vol 427 ◽  
Author(s):  
J. Y. Yew ◽  
L. J. Chen ◽  
K. Nakamura
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Epitaxial Growth ◽  
Electron Beam Lithography ◽  
Stress Measurement ◽  
Deep Submicron ◽  
Film Stress ◽  
Size And Shape ◽  
Thin Film Stress ◽  
Single Orientation

AbstractEpitaxial growth of NiSi2 on (111)Si inside 0.1-0.6 4m in size oxide openings prepared by electron beam lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy and thin film stress measurement. Striking effects of size and shape of deep submicron oxide openings on the growth of NiSi2 epitaxy were observed. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside both contact holes and linear openings of 0.3. μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings.

Investigations on Plasmonic Modes of Noble Metal Nano-Disks Using High-Resolution Cathodoluminescence Imaging Spectroscopy

2011 ◽  
Vol 1294 ◽  
Author(s):  
Anil Kumar ◽  
Kin Hung Fung ◽  
Nicholas X. Fang
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Size Dependence ◽  
Imaging Spectroscopy ◽  
Monochromatic Imaging ◽  
Matter Interaction ◽  
Potential Applications ◽  
Light Matter Interaction ◽  
Imaging And Spectroscopy ◽  
Cathodoluminescence Imaging

ABSTRACTIn this work, we report investigations on plasmonic nano-disks using cathodoluminescence (CL) imaging and spectroscopy. 50 nm thick gold disks fabricated using electron beam lithography were studied and several modes were identified. Detailed analysis of the modes using monochromatic imaging and CL spectra showed strong size dependence. Our investigations on these plasmonic nano-disks allow understanding of light-matter interaction at nanoscale, with several potential applications including next generation plasmonic nano-lasers.

Effect of Silanization Film Thickness in Soft Lithography of Nanoscale Features

2011 ◽  
Vol 2 (4) ◽  
Author(s):  
Lucas H. Ting ◽  
Shirin Feghhi ◽  
Sangyoon J. Han ◽  
Marita L. Rodriguez ◽  
Nathan J. Sniadecki
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Soft Lithography ◽  
Critical Parameter ◽  
Lithography Process ◽  
Fluorinated Silane ◽  
Nanoscale Features ◽  
Scanning Electron

Soft lithography was used to replicate nanoscale features made using electron beam lithography on a polymethylmethacrylate (PMMA) master. The PMMA masters were exposed to fluorinated silane vapors to passivate its surfaces so that polydimethylsiloxane (PDMS) did not permanently bond to the master. From scanning electron microscopy, the silanization process was found to deposit a coating on the master that was a few hundreds of nanometers thick. These silane films partially concealed the nanoscale holes on the PMMA master, causing the soft lithography process to produce PDMS features with dimensions that were significantly reduced. The thickness of the silane films was directly measured on silicon or PMMA masters and was found to increase with exposure time to silane vapors. These findings indicate that the thickness of the silane coatings is a critical parameter when using soft lithography to replicate nanoscale features, and caution should be taken on how long a master is exposed to silane vapors.

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