scholarly journals Combining Focused Ion Beam and Scanning Electron Microscopy for IC Fab Support and Defect Review

1996 ◽  
Vol 4 (3) ◽  
pp. 18-19
Author(s):  
Janet Tashima ◽  
Jay Lindquist
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
The Other ◽  
High Resolution Imaging ◽  
Resolution Imaging ◽  
Twin Beam ◽  
Edge Tool ◽  
Scanning Electron

The cutting-edge tool for IC fab support and defect review brings together the Focused Ion Beam (FIB) technology with the Scanning Electron Microscope (SEM) into a single workstation. The twin beam FIB/SEM workstation, FEI Company's DualBeam™ 820 for example, combines the unique micromachining, microdeposition, and analysis capabilities of a FIB with the high resolution imaging power of a Schottky field emission scanning electron microscope (FE SEM). The full functionality of both instruments is available and neither is compromised by the other.

FIB Enhancement of Mechanically Polished Cross-sections

2019 ◽  
Author(s):  
Becky Holdford
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Resolution Imaging ◽  
Chemical Attack ◽  
Resolution Imaging ◽  
Scanning Electron

Abstract On mechanically polished cross-sections, getting a surface adequate for high-resolution imaging is sometimes beyond the analyst’s ability, due to material smearing, chipping, polishing media chemical attack, etc.. A method has been developed to enable the focused ion beam (FIB) to re-face the section block and achieve a surface that can be imaged at high resolution in the scanning electron microscope (SEM).

Solving the Voltage Contrast on Floating Substrate with Standard FA Toolset

2016 ◽  
Author(s):  
Julien Goxe ◽  
Béatrice Vanhuffel ◽  
Marie Castignolles ◽  
Thomas Zirilli
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Mixed Signal ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.

scholarly journals Understanding the Interdependence of Penetration Depth and Deformation on Nanoindentation of Nanoporous Silver

Metals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1346
Author(s):  
Yannick Champion ◽  
Mathilde Laurent-Brocq ◽  
Pierre Lhuissier ◽  
Frédéric Charlot ◽  
Alberto Moreira Jorge Junior ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Density Variation ◽  
Selective Chemical ◽  
Indent Depth ◽  
Selective Chemical Etching ◽  
Scanning Electron

A silver-based nanoporous material was produced by dealloying (selective chemical etching) of an Ag38.75Cu38.75Si22.5 crystalline alloy. Composed of connected ligaments, this material was imaged using a scanning electron microscope (SEM) and focused ion-beam (FIB) scanning electron microscope tomography. Its mechanical behavior was evaluated using nanoindentation and found to be heterogeneous, with density variation over a length scale of a few tens of nanometers, similar to the indent size. This technique proved relevant to the investigation of a material’s mechanical strength, as well as to how its behavior related to the material’s microstructure. The hardness is recorded as a function of the indent depth and a phenomenological description based on strain gradient and densification kinetic was proposed to describe the resultant depth dependence.

Quantitative Dopant Contrast in Scanning Electron Microscope and Helium Ion Microscope Using Focused Ion Beam Prepared Specimens

2012 ◽  
Vol 18 (S2) ◽  
pp. 820-821
Author(s):  
H. Zhang ◽  
Y. Chen
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Helium Ion ◽  
Scanning Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Local Investigation of Microstructure-Induced Fatigue Damaging

2009 ◽  
Vol 417-418 ◽  
pp. 521-524
Author(s):  
Michael Marx ◽  
Wolfgang Schäf ◽  
Markus T. Welsch ◽  
Horst Vehoff
Keyword(s):  
Electron Microscope ◽  
Crack Initiation ◽  
Scanning Electron Microscope ◽  
Crack Propagation ◽  
Focused Ion Beam ◽  
Fatigue Cracks ◽  
Ion Beam ◽  
Short Crack ◽  
Beam Technique ◽  
Scanning Electron

From the emission of dislocations till short crack propagation fatigue is a local process determined by the microstructure. In this paper we present experiments based on refined applications of the scanning electron microscope and focused ion beam technique, which give detailed information about crack initiation and the interaction of short fatigue cracks with microstructural elements.

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