AFM Measurements of DNA Molecule Electron Transport Properties

2010 ◽  
Vol 18 (5) ◽  
pp. 20-23
Author(s):  
Jim McMahon

Deoxyribonucleic acid (DNA) has been considered as a possibility for molecular electronics. Because DNA is able to recognize other molecules—other strands of DNA—and because it binds together with similar DNA strands in a very unique way, scientists have suggested the possibility of using DNA as an electronic circuit without having to build in any other circuitry. The DNA would bind with other similar DNA strands that it recognizes and then use the connecting properties of the DNA to create a self-assembled biological wire for electrical conduction. Until recently, uncertainty existed about whether DNA could conduct at all, and if it could, how well it could conduct. Scientific speculations ranged from DNA being a superconductor to a complete insulator. Recent research, however, by Dr. Sidney R. Cohen in collaboration with Dr. Ron Naaman and Dr. Claude Nogues of the Weizmann Institute of Science, Scanned Probe Microscopy Unit, in Rehovot, Israel, aided by the enabling technologies of ultra-high-resolution microscopy and negative-stiffness vibration isolation, has shed new light on the electrical transport properties of DNA, focusing on the capacity of single molecules of DNA to transport current along individual strands.

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1765
Author(s):  
Andrew F. Zhou ◽  
Elluz Pacheco ◽  
Badi Zhou ◽  
Peter X. Feng

With the advances in nanofabrication technology, horizontally aligned and well-defined nitrogen-doped ultrananocrystalline diamond nanostripes can be fabricated with widths in the order of tens of nanometers. The study of the size-dependent electron transport properties of these nanostructures is crucial to novel electronic and electrochemical applications. In this paper, 100 nm thick n-type ultrananocrystalline diamond thin films were synthesized by microwave plasma-enhanced chemical vapor deposition method with 5% N2 gas in the plasma during the growth process. Then the nanostripes were fabricated using standard electron beam lithography and reactive ion etching techniques. The electrical transport properties of the free-standing single nanostripes of different widths from 75 to 150 nm and lengths from 1 to 128 μm were investigated. The study showed that the electrical resistivity of the n-type ultrananocrystalline diamond nanostripes increased dramatically with the decrease in the nanostripe width. The nanostripe resistivity was nearly doubted when the width was reduced from 150 nm to 75 nm. The size-dependent variability in conductivity could originate from the imposed diffusive scattering of the nanostripe surfaces which had a further compounding effect to reinforce the grain boundary scattering.


2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...


Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.


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