W-band active loads and switching front-end MMICs for radiometer calibration

2013 ◽  
Vol 5 (3) ◽  
pp. 293-299
Author(s):  
Ernst Weissbrodt ◽  
Michael Schlechtweg ◽  
Oliver Ambacher ◽  
Ingmar Kallfass
Keyword(s):  
Integrated Circuit ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Monolithic Integrated Circuit ◽  
Radiometer Calibration ◽  
Fast Switching ◽  
Front End ◽  
W Band ◽  
Calibration Methods

A millimeter-wave monolithic integrated circuit consisting of a W-band (75–100 GHz) single-pole-five-throw (SP5T) switch and multiple internal active and passive loads for radiometer calibration was designed and manufactured in a low noise 50 nm GaAs metamorphic high electron mobility transistor technology. This highly compact and integrated front-end device for radiometer systems is capable of ultra fast switching between two identical input ports (e.g. for polarimetric applications) and three internal calibration references. It allows an accurate multi-load calibration with noise temperatures between 220 and 1750 K at the output of the device. Compared to conventional calibration methods this marks a substantial advantage in terms of size, mass, power consumption, complexity, and repetition rate.

scholarly journals GaN low-noise X-band MMIC amplifier.

2021 ◽  
Vol 2021 (2) ◽  
Author(s):  
E. Kudabay ◽  
◽  
A. Salikh ◽  
V.A. Moseichuk ◽  
A. Krivtsun ◽  
...  
Keyword(s):  
Output Power ◽  
Integrated Circuit ◽  
Noise Figure ◽  
Supply Voltage ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Common Source ◽  
High Electron ◽  
Monolithic Integrated Circuit ◽  
X Band

The purpose of this paper is to design a microwave monolithic integrated circuit (MMIC) for low noise amplifier (LNA) X-band (7-12 GHz) based on technology of gallium nitride (GaN) high electron mobility transistor (HEMT) with a T-gate, which has 100 nm width, on a silicon (Si) semi-insulating substrate of the OMMIC company. The amplifier is based on common-source transistors with series feedback, which was formed by high-impedance transmission line, and with parallel feedback to match noise figure and power gain. The key characteristics of an LNA are noise figure and gain. However, in this paper, it was decided to design the LNA, which should have a good margin in terms of input and output power. As a result, GaN technology was chosen, which has a higher noise figure compared to other technologies, but eliminates the need for an input power limiter, which in turn significantly increases the overall noise figure. As a result LNA MMIC was developed with the following characteristics: noise figure less than 1.6 dB, small-signal gain more than 20 dB, return loss better than -13 dB and output power more than 19 dBm with 1 dB compression in the range from 7 to 12 GHz in dimensions 2x1.5 mm², which has a supply voltage of 8 V and a current consumption of less than 70 mA. However, it should be said that LNA was only modeled in the AWR DE.

X-band T/R-module front-end based on GaN MMICs

2009 ◽  
Vol 1 (4) ◽  
pp. 387-394 ◽  
Author(s):  
Patrick Schuh ◽  
Hardy Sledzik ◽  
Rolf Reber ◽  
Andreas Fleckenstein ◽  
Ralf Leberer ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Ceramic Technology ◽  
High Electron ◽  
Microstrip Technology ◽  
High Power Amplifier ◽  
Front End ◽  
X Band

Amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the basis of novel AlGaN/GaN (is a chemical material description) high electron mobility transistor (HEMT) structures. Both low-noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated, and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high-power amplifier (HPA) are measured. The measured noise figure of the low-noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multi-layer low-temperature cofired ceramic technology (LTCC).

243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology

2014 ◽  
Vol 6 (3-4) ◽  
pp. 215-223 ◽  
Author(s):  
Axel Tessmann ◽  
Volker Hurm ◽  
Arnulf Leuther ◽  
Hermann Massler ◽  
Rainer Weber ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Noise Figure ◽  
Coplanar Waveguide ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
High Electron ◽  
Monolithic Integrated Circuit ◽  
Electron Mobility Transistors ◽  
Noise Amplifier

Two compact H-band (220–325 GHz) low-noise millimeter-wave monolithic integrated circuit (MMIC) amplifiers have been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 and 35 nm metamorphic high electron mobility transistors (mHEMTs). For low-loss packaging of the circuits, a set of waveguide-to-microstrip transitions has been realized on 50-μm-thick GaAs substrates demonstrating an insertion loss of <0.5 dB at 243 GHz. By applying the 50 nm gate-length process, a four-stage cascode amplifier module achieved a small-signal gain of 30.6 dB at 243 GHz and more than 28 dB in the bandwidth from 218 to 280 GHz. A second amplifier module, based on the 35-nm mHEMT technology, demonstrated a considerably improved gain of 34.6 dB at 243 GHz and more than 32 dB between 210 and 280 GHz. At the operating frequency, the two broadband low-noise amplifier modules achieved a room temperature noise figure of 5.6 dB (50 nm) and 5.0 dB (35 nm), respectively.

scholarly journals Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions

2019 ◽  
Vol 36 (2) ◽  
pp. 73-82
Author(s):  
Nurul Aida Farhana Othman ◽  
Sharidya Rahman ◽  
Sharifah Fatmadiana Wan Muhamad Hatta ◽  
Norhayati Soin ◽  
Brahim Benbakhti ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Integrated Circuit ◽  
Aluminum Gallium Nitride ◽  
Field Effect Transistors ◽  
Material Selection ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Content Type ◽  
Physical Dimensions

Purpose To design and optimize the traditional aluminum gallium nitride/gallium nitride high electron mobility transistor (HEMT) device in achieving improved performance and current handling capability using the Synopsys’ Sentaurus TCAD tool. Design/methodology/approach Varying material and physical considerations, specifically investigating the effects of graded barriers, spacer interlayer, material selection for the channel, as well as study of the effects in the physical dimensions of the HEMT, have been extensively carried out. Findings Critical figure-of-merits, specifically the DC characteristics, 2DEG concentrations and mobility of the heterostructure device, have been evaluated. Significant observations include enhancement of maximum current density by 63 per cent, whereas the electron concentration was found to propagate by 1,020 cm−3 in the channel. Practical implications This work aims to provide tactical optimization to traditional heterostructure field effect transistors, rendering its application as power amplifiers, Monolithic Microwave Integrated Circuit (MMICs) and Radar, which requires low noise performance and very high radio frequency design operations. Originality/value Analysis in covering the breadth and complexity of heterostructure devices has been carefully executed through extensive TCAD modeling, and the end structure obtained has been optimized to provide best performance.

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

2010 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Near Infrared ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Civil Defense ◽  
Base Stations ◽  
Infrared Range ◽  
High Electron ◽  
Radar Applications ◽  
Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

Investigation of Dielectric Resonator Oscillator Using High-Electron Mobility Transistor at 26GHz for Space Applications

2021 ◽  
pp. 2250046
Author(s):  
Pinku Ranjan ◽  
Swati Khandare
Keyword(s):  
Phase Noise ◽  
Electron Mobility ◽  
Dielectric Resonator ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Design System ◽  
High Electron ◽  
Space Applications ◽  
High Electron Mobility ◽  
High Frequencies

An oscillator is a vital component as the energy source in microwave telecommunication system. Microwave oscillators designed using Gunn diode have poor DC to RF efficiency. IMPact Ionization Avalanche Transit-Time diode (IMPATT) oscillators have the drawback of poor noise performance. The transistorized oscillators have a limitation to the maximum oscillation frequency which means that they cannot be used for oscillators designed for high frequencies. To design negative series feedback Dielectric Resonator Oscillator (DRO), the resonant unit uses a dielectric resonator (DR) since it is small in size, light in weight, has high-Quality ([Formula: see text]) factor, better stability and also it is inexpensive. It has the benefits of low-phase noise, low cost, miniaturization, high stability, applicable for devices designed at high frequencies and had already been widely applied, so the research on microwave dielectric oscillator has also been one of the focus of today’s microwave integrated circuits. DRO is widely used in electronic warfare, missile, radar and communication systems. The DRO incorporates High-Electron Mobility Transistor (HEMT) as an active device since it offers higher power-added efficiency combined with excellent low-noise figures and performance. The entire circuit of DRO using HEMT at 26[Formula: see text]GHz is designed using Agilent Advanced Design System (ADS) software. In this, DRO different measurements of parameters are done such as output power which is typically [Formula: see text][Formula: see text]dBm for 26[Formula: see text]GHz DRO, phase noise at 10[Formula: see text]kHz offset for 26[Formula: see text]GHz DRO it is 80[Formula: see text]dBc/Hz. The frequency pushing and frequency pulling for 26[Formula: see text]GHz DRO its typical values are 30[Formula: see text]kHz/V and 1[Formula: see text]MHz, respectively.

scholarly journals Compact Cryogenic Receivers for the 1.3 to 43 GHz Range

1988 ◽  
Vol 129 ◽  
pp. 499-500
Author(s):  
S. Weinreb ◽  
R. Norrod ◽  
M. W. Pospieszalski
Keyword(s):  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Current Status ◽  
High Electron ◽  
Light Weight ◽  
Closed Cycle ◽  
High Electron Mobility ◽  
Dual Channel ◽  
Long Baseline ◽  
Very Long Baseline Array

A series of front-ends utilizing small closed-cycle refrigerators and very low-noise, high-electron-mobility transistor (HEMT) amplifiers have been developed for use in the Very Long Baseline Array (VLBA). The frequency bands, amplifier noise temperatures, expected system temperatures, and current status are shown in Table I. The receivers are designed to be light weight (∼ 55 pounds except for 105 pounds at 1.5 GHz) for ease of installation and maintenance, are easily remotely controlled and monitored, and provide dual-channel circular polarization capability. Detailed descriptions of some of the front-ends are given in VLBA technical reports.

High-power monolithic AlGaN/GaN high electron mobility transistor switches

2009 ◽  
Vol 1 (4) ◽  
pp. 339-345 ◽  
Author(s):  
Vincenzo Alleva ◽  
Andrea Bettidi ◽  
Walter Ciccognani ◽  
Marco De Dominicis ◽  
Mauro Ferrari ◽  
...  
Keyword(s):  
Insertion Loss ◽  
High Power ◽  
Integrated Circuit ◽  
State Of The Art ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Monolithic Microwave Integrated Circuit ◽  
X Band ◽  
Power Handling Capability ◽  
Better Than

This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation, and a power handling capability better than 39 dBm at a 1 dB insertion loss compression point; the wideband switch shows an insertion loss lower than 2.2 dB, better than 25 dB isolation, and an insertion loss compression of 1 dB at an input drive higher than 38.5 dBm in the entire bandwidth.

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