Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties

2017 ◽  
Vol 29 (11) ◽  
pp. 4654-4666 ◽  
Author(s):  
Mihaela Popovici ◽  
Benjamin Groven ◽  
Kristof Marcoen ◽  
Quan Manh Phung ◽  
Shibesh Dutta ◽  
...  
2019 ◽  
Vol 35 (7) ◽  
pp. 720-731 ◽  
Author(s):  
Jonathan Guerrero-Sánchez ◽  
Bo Chen ◽  
Noboru Takeuchi ◽  
Francisco Zaera

Abstract


2014 ◽  
Vol 43 (9) ◽  
pp. 3492-3500 ◽  
Author(s):  
K. B. Klepper ◽  
O. Nilsen ◽  
S. Francis ◽  
H. Fjellvåg

We investigated the influence of the functionality of organic ligands on film properties in organic–inorganic hybrid thin films deposited by atomic layer deposition.


2015 ◽  
Vol 3 (21) ◽  
pp. 11453-11461 ◽  
Author(s):  
V. Rogé ◽  
N. Bahlawane ◽  
G. Lamblin ◽  
I. Fechete ◽  
F. Garin ◽  
...  

In this work, we have evidenced the impact of stoichiometry on the photocatalytic properties of ZnO nanofilms grown by atomic layer deposition (ALD).


2000 ◽  
Vol 616 ◽  
Author(s):  
S. M. George ◽  
J.D. Ferguson ◽  
J.W. Klaus

AbstractThin films can be deposited with atomic layer control using sequential surface reactions. The atomic layer deposition (ALD) of compound and single-element films can be accomplished using the appropriate surface chemistry. This paper reviews the ALD of dielectric alumina (Al2O3) films and conducting tungsten (W) films. The Al2O3 films are deposited on submicron BN particles and the surface chemistry is monitored using Fourier transform infrared (FTIR) spectroscopy. Additional transmission electron microscopy (TEM) studies investigated the conformality of the Al2O3 growth on the BN particles. FTIR investigations of the surface chemistry during W ALD are performed on nanometer-sized Si02 particles. Additional in situ spectroscopy ellipsometry studies of W ALD on Si(100) established the W ALD growth rates. Al2O3 and W ALD both illustrate the potential of ALD to obtain conformal and atomic layer controlled thin film growth using sequential surface reactions.


2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.


CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.


2021 ◽  
pp. 2102556
Author(s):  
Jinseon Lee ◽  
Jeong‐Min Lee ◽  
Hongjun Oh ◽  
Changhan Kim ◽  
Jiseong Kim ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document