Water-Stable Metal–Organic Framework with Three Hydrogen-Bond Acceptors: Versatile Theoretical and Experimental Insights into Adsorption Ability and Thermo-Hydrolytic Stability

2018 ◽  
Vol 57 (6) ◽  
pp. 3287-3296 ◽  
Author(s):  
Kornel Roztocki ◽  
Magdalena Lupa ◽  
Andrzej Sławek ◽  
Wacław Makowski ◽  
Irena Senkovska ◽  
...  
2021 ◽  
Vol 9 (36) ◽  
pp. 12086-12093
Author(s):  
Junjie Wang ◽  
Yao Cheng ◽  
Jie Zhou ◽  
Weihua Tang

Zn(ii)-based MOF for detecting FOX-7 like explosives is designed via hydrogen-bond-intensified host–guest interactions. The crystalline MOF achieves 0.14 ppm detection limit and a highest fluorescence quenching constant of 3.22 × 104 M−1.


2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Julia Oktawiec ◽  
Henry Z. H. Jiang ◽  
Jenny G. Vitillo ◽  
Douglas A. Reed ◽  
Lucy E. Darago ◽  
...  

2019 ◽  
Vol 141 (19) ◽  
pp. 7853-7864 ◽  
Author(s):  
Dahae Song ◽  
Jinhee Bae ◽  
Hoon Ji ◽  
Min-Bum Kim ◽  
Youn-Sang Bae ◽  
...  

ChemCatChem ◽  
2020 ◽  
Vol 12 (6) ◽  
pp. 1789-1798 ◽  
Author(s):  
Aniruddha Das ◽  
Nagaraj Anbu ◽  
Mostakim Sk ◽  
Amarajothi Dhakshinamoorthy ◽  
Shyam Biswas

2019 ◽  
Vol 5 (8) ◽  
pp. eaaw4515 ◽  
Author(s):  
Zizhu Yao ◽  
Liang Pan ◽  
Lizhen Liu ◽  
Jindan Zhang ◽  
Quanjie Lin ◽  
...  

Resistive random-access memory (RRAM) has evolved as one of the most promising candidates for the next-generation memory, but bistability for information storage, simultaneous implementation of resistive switching and rectification effects, and a better understanding of switching mechanism are still challenging in this field. Herein, we report a RRAM device based on a chiral metal-organic framework (MOF) FJU-23-H2O with switched hydrogen bond pathway within its channels, exhibiting an ultralow set voltage (~0.2 V), a high ON/OFF ratio (~105), and a high rectification ratio (~105). It is not only the first MOF with voltage-gated proton conduction but also the first single material showing both rectifying and resistive switching effects. By single-crystal x-ray diffraction analyses, the mechanism of the resistive switching has been demonstrated.


ACS Catalysis ◽  
2016 ◽  
Vol 6 (5) ◽  
pp. 3248-3252 ◽  
Author(s):  
Edward A. Hall ◽  
Louis R. Redfern ◽  
Michael H. Wang ◽  
Karl A. Scheidt

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