A Time-Independent Quantum Approach to Ro-vibrationally Inelastic Scattering between Atoms and Triatomic Molecules

2021 ◽  
Author(s):  
Dongzheng Yang ◽  
Daiqian Xie ◽  
Hua Guo
Keyword(s):  
Inelastic Scattering ◽  
Triatomic Molecules ◽  
Quantum Approach

Analysis of STEM micrographs of thick objects

1978 ◽  
Vol 36 (2) ◽  
pp. 106-107
Author(s):  
S. Golladay
Keyword(s):  
Inelastic Scattering ◽  
Multiple Scattering ◽  
Mass Distribution ◽  
Cross Sections ◽  
Phase Contrast ◽  
Image Point ◽  
Contrast Effects ◽  
Total Cross Sections ◽  
Elastic And Inelastic Scattering

The theory of multiple scattering has been worked out by Groves and comparisons have been made between predicted and observed signals for thick specimens observed in a STEM under conditions where phase contrast effects are unimportant. Independent measurements of the collection efficiencies of the two STEM detectors, calculations of the ratio σe/σi = R, where σe, σi are the total cross sections for elastic and inelastic scattering respectively, and a model of the unknown mass distribution are needed for these comparisons. In this paper an extension of this work will be described which allows the determination of the required efficiencies, R, and the unknown mass distribution from the data without additional measurements or models. Essential to the analysis is the fact that in a STEM two or more signal measurements can be made simultaneously at each image point.

Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

1982 ◽  
Vol 40 ◽  
pp. 78-79
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Inelastic Scattering ◽  
Temperature Dependence ◽  
Structural Damage ◽  
Direct Result ◽  
Second Step ◽  
Strong Temperature Dependence ◽  
Electron Dose ◽  
Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

The Resolution and Contrast in Biological Sections Determined by Inelastic and Elastic Scattering

1973 ◽  
Vol 31 ◽  
pp. 224-225
Author(s):  
D. L. Misell
Keyword(s):  
Electron Microscopy ◽  
Adverse Effect ◽  
Elastic Scattering ◽  
Inelastic Scattering ◽  
Amorphous Carbon ◽  
Polymeric Materials ◽  
Chromatic Aberration ◽  
Image Resolution ◽  
Quantitative Estimates ◽  
Elastic Ratio

In the electron microscopy of biological sections the adverse effect of chromatic aberration on image resolution is well known. In this paper calculations are presented for the inelastic and elastic image intensities using a wave-optical formulation. Quantitative estimates of the deterioration in image resolution as a result of chromatic aberration are presented as an alternative to geometric calculations. The predominance of inelastic scattering in the unstained biological and polymeric materials is shown by the inelastic to elastic ratio, I/E, within an objective aperture of 0.005 rad for amorphous carbon of a thickness, t=50nm, typical of biological sections; E=200keV, I/E=16.

Resolving Crystallites in Zirconium Oxide Films

1969 ◽  
Vol 27 ◽  
pp. 140-141
Author(s):  
R.A. Ploc
Keyword(s):  
Electron Microscope ◽  
Inelastic Scattering ◽  
Zirconium Oxide ◽  
Oxide Films ◽  
Optic Axis ◽  
Objective Lens ◽  
Microscope Objective ◽  
Linear Optic ◽  
A Current ◽  
Microscope Objective Lens

The optic axis of an electron microscope objective lens is usually assumed to be straight and co-linear with the mechanical center. No reason exists to assume such perfection and, indeed, simple reasoning suggests that it is a complicated curve. A current centered objective lens with a non-linear optic axis when used in conjunction with other lenses, leads to serious image errors if the nature of the specimen is such as to produce intense inelastic scattering.

An Environmental Wet Cell For High Voltage Electron Microscopy

1973 ◽  
Vol 31 ◽  
pp. 18-19
Author(s):  
N.J. Tighe ◽  
H.M. Flower ◽  
P.R. Swann
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
Image Quality ◽  
Inelastic Scattering ◽  
High Voltage ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
Environmental Cell ◽  
Water Saturated ◽  
High Temperature Gas

A differentially pumped environmental cell has been developed for use in the AEI EM7 million volt microscope. In the initial version the column of gas traversed by the beam was 5.5mm. This permited inclusion of a tilting hot stage in the cell for investigating high temperature gas-specimen reactions. In order to examine specimens in the wet state it was found that a pressure of approximately 400 torr of water saturated helium was needed around the specimen to prevent dehydration. Inelastic scattering by the water resulted in a sharp loss of image quality. Therefore a modified cell with an ‘airgap’ of only 1.5mm has been constructed. The shorter electron path through the gas permits examination of specimens at the necessary pressure of moist helium; the specimen can still be tilted about the side entry rod axis by ±7°C to obtain stereopairs.

The effect of temperature on high-resolution TEM image contrast

1995 ◽  
Vol 53 ◽  
pp. 640-641
Author(s):  
T. Geipel ◽  
W. Mader ◽  
P. Pirouz
Keyword(s):  
Form Factor ◽  
Inelastic Scattering ◽  
Accurate Method ◽  
Waller Factor ◽  
Effect Of Temperature ◽  
Specimen Thickness ◽  
Influence Of Temperature ◽  
Debye Waller Factor ◽  
Influence Of Temperature On ◽  
Atomic Form Factor

Temperature affects both elastic and inelastic scattering of electrons in a crystal. The Debye-Waller factor, B, describes the influence of temperature on the elastic scattering of electrons, whereas the imaginary part of the (complex) atomic form factor, fc = fr + ifi, describes the influence of temperature on the inelastic scattering of electrons (i.e. absorption). In HRTEM simulations, two possible ways to include absorption are: (i) an approximate method in which absorption is described by a phenomenological constant, μ, i.e. fi; - μfr, with the real part of the atomic form factor, fr, obtained from Hartree-Fock calculations, (ii) a more accurate method in which the absorptive components, fi of the atomic form factor are explicitly calculated. In this contribution, the inclusion of both the Debye-Waller factor and absorption on HRTEM images of a (Oll)-oriented GaAs crystal are presented (using the EMS software.Fig. 1 shows the the amplitudes and phases of the dominant 111 beams as a function of the specimen thickness, t, for the cases when μ = 0 (i.e. no absorption, solid line) and μ = 0.1 (with absorption, dashed line).

Inelastic scattering at surfaces and interfaces

1986 ◽  
Vol 44 ◽  
pp. 392-393
Author(s):  
R. H. Ritchie ◽  
A. Howie
Keyword(s):  
Inelastic Scattering ◽  
Surface Properties ◽  
Correlation Energy ◽  
Condensed Matter ◽  
Charged Particles ◽  
Condensed Matter Physics ◽  
Optical Phonons ◽  
Exchange Correlation ◽  
Surfaces And Interfaces ◽  
Inelastic Interactions

An important part of condensed matter physics in recent years has involved detailed study of inelastic interactions between swift electrons and condensed matter surfaces. Here we will review some aspects of such interactions.Surface excitations have long been recognized as dominant in determining the exchange-correlation energy of charged particles outside the surface. Properties of surface and bulk polaritons, plasmons and optical phonons in plane-bounded and spherical systems will be discussed from the viewpoint of semiclassical and quantal dielectric theory. Plasmons at interfaces between dissimilar dielectrics and in superlattice configurations will also be considered.

Image formation analysis of thick biological specimens using three-dimensional power-spectra of through focus series

1994 ◽  
Vol 52 ◽  
pp. 124-125
Author(s):  
Karen F. Han
Keyword(s):  
Inelastic Scattering ◽  
Imaging Techniques ◽  
Mass Density ◽  
Relative Proportion ◽  
Three Dimensional ◽  
Power Spectra ◽  
Image Formation ◽  
Energy Filtering ◽  
Ewald Sphere ◽  
Nonlinear Imaging

The primary focus in our laboratory is the study of higher order chromatin structure using three dimensional electron microscope tomography. Three dimensional tomography involves the deconstruction of an object by combining multiple projection views of the object at different tilt angles, image intensities are not always accurate representations of the projected object mass density, due to the effects of electron-specimen interactions and microscope lens aberrations. Therefore, an understanding of the mechanism of image formation is important for interpreting the images. The image formation for thick biological specimens has been analyzed by using both energy filtering and Ewald sphere constructions. Surprisingly, there is a significant amount of coherent transfer for our thick specimens. The relative amount of coherent transfer is correlated with the relative proportion of elastically scattered electrons using electron energy loss spectoscopy and imaging techniques.Electron-specimen interactions include single and multiple, elastic and inelastic scattering. Multiple and inelastic scattering events give rise to nonlinear imaging effects which complicates the interpretation of collected images.

Quantitative energy-filtered electron diffraction

1994 ◽  
Vol 52 ◽  
pp. 992-993
Author(s):  
R. Vincent
Keyword(s):  
Electron Diffraction ◽  
Inelastic Scattering ◽  
Dynamic Range ◽  
Electron Optics ◽  
Surface Layers ◽  
High Brightness ◽  
Inclined Surfaces ◽  
Perfect Symmetry ◽  
Amorphous Surface ◽  
The Ideal

Microanalysis and diffraction on a sub-nanometre scale have become practical in modern TEMs due to the high brightness of field emission sources combined with the short mean free paths associated with both elastic and inelastic scattering of incident electrons by the specimen. However, development of electron diffraction as a quantitative discipline has been limited by the absence of any generalised theory for dynamical inelastic scattering. These problems have been simplified by recent innovations, principally the introduction of spectrometers such as the Gatan imaging filter (GIF) and the Zeiss omega filter, which remove the inelastic electrons, combined with annual improvements in the speed of computer workstations and the availability of solid-state detectors with high resolution, sensitivity and dynamic range.Comparison of experimental data with dynamical calculations imposes stringent requirements on the specimen and the electron optics, even when the inelastic component has been removed. For example, no experimental CBED pattern ever has perfect symmetry, departures from the ideal being attributable to residual strain, thickness averaging, inclined surfaces, incomplete cells and amorphous surface layers.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

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