scholarly journals Electronic g-Tensor Calculations for Dangling Bonds in Nanodiamonds

2021 ◽  
Vol 125 (37) ◽  
pp. 8249-8260
Author(s):  
Šaru̅nas Masys ◽  
Valdas Jonauskas ◽  
Zilvinas Rinkevicius
Keyword(s):  
Dangling Bonds

Photoconductivity in Vacuum Deposited Films of Silicon-Based Polymers

1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe
Keyword(s):  
Charge Transfer ◽  
Chemical Modification ◽  
Electronic Transport ◽  
Hole Transport ◽  
Electron Acceptors ◽  
Oxygen Atmosphere ◽  
Dangling Bonds ◽  
Silicon Based ◽  
Deposited Films

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.

Metastable Defects in the Amorphous Silicon-Germanium Alloys

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dangling Bonds ◽  
Annealing Behavior ◽  
Fundamental Properties ◽  
Silicon Materials ◽  
Salient Features ◽  
The Individual ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

scholarly journals A Facile and Efficient Bromination of Multi-Walled Carbon Nanotubes

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3161
Author(s):  
Sandra Zarska ◽  
Damian Kulawik ◽  
Volodymyr Pavlyuk ◽  
Piotr Tomasik ◽  
Alicja Bachmatiuk ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Room Temperature ◽  
Covalent Attachment ◽  
Closed Vessel ◽  
Dangling Bonds ◽  
Magnetic Stirrer ◽  
Defect Sites ◽  
Multi Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes ◽  
Covalently Bound

The bromination of multi-walled carbon nanotubes (MWCNT) was performed with vapor bromine in a closed vessel, and they were subjected to intensive stirring with a magnetic stirrer for up to 14 days. The efficiency of bromination was compared depending upon duration. The structure and surface of the crude and purified products were characterized by detailed physicochemical analyses, such as SEM/EDS, TEM, XRD, TGA, Raman, and XPS spectroscopies. The studies confirmed the presence of bromine covalently bound with nanotubes as well as the formation of inclusion MWCNT–Br2 complexes. It was confirmed that Br2 molecules are absorbed on the surface of nanotubes (forming the CNT-Br2 complex), while they can dissociate close to dangling bonds at CNT defect sites with the formation of covalent C−Br bonds. Thus, any covalent attachment of bromine to the graphitic surface achieved around room temperature is likely related to the defects in the MWCNTs. The best results, i.e., the highest amount of attached Br2, were obtained for brominated nanotubes brominated for 10 days, with the content of covalently bound bromine being 0.68 at% (by XPS).

scholarly journals Optimizing surface defects for atomic-scale electronics: Si dangling bonds

2017 ◽  
Vol 1 (2) ◽  
Author(s):  
Peter Scherpelz ◽  
Giulia Galli
Keyword(s):  
Surface Defects ◽  
Atomic Scale ◽  
Dangling Bonds

Hot‐electron induced passivation of silicon dangling bonds at the Si(111)/SiO2 interface

1996 ◽  
Vol 69 (1) ◽  
pp. 103-105 ◽  
Author(s):  
E. Cartier ◽  
J. H. Stathis
Keyword(s):  
Hot Electron ◽  
Dangling Bonds

True position of dangling bonds in the gap of undoped hydrogenated amorphous silicon

1991 ◽  
Vol 137-138 ◽  
pp. 367-370 ◽  
Author(s):  
Choochon Lee ◽  
Warren Turner ◽  
William Paul
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Dangling Bonds ◽  
True Position ◽  
Hydrogenated Amorphous

scholarly journals Defects in SiC for Quantum Computing

MRS Advances ◽  
2019 ◽  
Vol 4 (40) ◽  
pp. 2217-2222
Author(s):  
Renu Choudhary ◽  
Rana Biswas ◽  
Bicai Pan ◽  
Durga Paudyal
Keyword(s):  
Band Gap ◽  
Valence Band ◽  
Density Functional ◽  
Single Photon ◽  
Band Edge ◽  
Valence Band Edge ◽  
Dangling Bonds ◽  
Defect Levels ◽  
Formation Energies ◽  
Qubit Operation

AbstractMany novel materials are being actively considered for quantum information science and for realizing high-performance qubit operation at room temperature. It is known that deep defects in wide-band gap semiconductors can have spin states and long coherence times suitable for qubit operation. We theoretically investigate from ab-initio density functional theory (DFT) that the defect states in the hexagonal silicon carbide (4H-SiC) are potential qubit materials. The DFT supercell calculations were performed with the local-orbital and pseudopotential methods including hybrid exchange-correlation functionals. Di-vacancies in SiC supercells yielded defect levels in the gap consisting of closely spaced doublet just above the valence band edge, and higher levels in the band gap. The divacancy with a spin state of 1 is charge neutral. The divacancy is characterized by C-dangling bonds and a Si-dangling bonds. Jahn-teller distortions and formation energies as a function of the Fermi level and single photon interactions with these defect levels will be discussed. In contrast, the anti-site defects where C, Si are interchanged have high formation energies of 5.4 eV and have just a single shallow defect level close to the valence band edge, with no spin. We will compare results including the defect levels from both the electronic structure approaches.

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