Nonmonotonous Distance Dependence of van der Waals Screening by a Dielectric Layer

Author(s):  
Jiabao Yang ◽  
Xiaofei Liu ◽  
Wanlin Guo
Nanoscale ◽  
2021 ◽  
Author(s):  
Yu-Chun Li ◽  
Xiao-Xi Li ◽  
Guang Zeng ◽  
Yu-Chang Chen ◽  
Dingbo Chen ◽  
...  

A high optoelectronic performance ReS2/ReSe2 van der Waals (vdW) heterojunction phototransistor utilizing thin hafnium oxide (HfO2) as a local-back-gate dielectric layer was preparation and explored. The heterojunction-based phototransistor exhibits a...


2016 ◽  
Vol 17 (4) ◽  
pp. 507-510
Author(s):  
V.M. Katerynchuk ◽  
O.S. Litvin ◽  
Z.R. Kudrynskyi ◽  
Z.D. Kovalyuk ◽  
I.G. Tkachuk ◽  
...  

We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga2O3 on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0,74 - 1,0 µm.


Universe ◽  
2021 ◽  
Vol 7 (11) ◽  
pp. 427
Author(s):  
George Dedkov

This paper presents the results of calculating the van der Waals friction force (dissipative fluctuation-electromagnetic force) between metallic (Au) plates in relative motion at temperatures close to 1 K. The stopping tangential force arises between moving plates along with the usual Casimir force of attraction, which has been routinely measured with high precision over the past two decades. At room temperatures, the former force is 10 orders of magnitude less than the latter, but at temperatures T<50 K, friction increases sharply. The calculations have been carried out in the framework of the Levin-Polevoi-Rytov fluctuation electromagnetic theory. For metallic plates with perfect crystal lattices and without defects, van der Waals friction force is shown to increase with decreasing temperature as T-4. In the presence of residual resistance ρ0 of the metal, a plateau is formed on the temperature dependence of the friction force at T→0 with a height proportional to ρ0-0.8. Another important finding is the weak force-distance dependence ~a-q (with q<1). The absolute values of the friction forces are achievable for measurements in AFM-based experiments.


The van der Waals free energy of a system of two half-spaces of aqueous electrolyte separated by a dielectric layer is studied. The coupling of the van der Waals free energy to the structure of the electrical double layers in the system is calculated in two cases: (i) fixed surface charge density; (ii) fluctuating surface charge density due to the ionization of long chain carboxylic acid groups adsorbed on to the surfaces of the dielectric layer.


1997 ◽  
Vol 91 (4) ◽  
pp. 689-696 ◽  
Author(s):  
HAI-BO QIAN ◽  
WOUTER HERREBOUT ◽  
BRIAN HOWARD

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