Dilational Viscoelasticity of Adsorption Layers Measured by Drop and Bubble Profile Analysis: Reason for Different Results

Langmuir ◽  
2016 ◽  
Vol 32 (22) ◽  
pp. 5500-5509 ◽  
Author(s):  
V. B. Fainerman ◽  
V. I. Kovalchuk ◽  
E. V. Aksenenko ◽  
R. Miller
2021 ◽  
Vol 5 (3) ◽  
pp. 39
Author(s):  
Valentin B. Fainerman ◽  
Volodymyr I. Kovalchuk ◽  
Eugene V. Aksenenko ◽  
Francesca Ravera ◽  
Libero Liggieri ◽  
...  

The dynamic and equilibrium properties of adsorption layers of poly (oxyethylene) alkyl ether (CnEOm) can be well described by the reorientation model. In its classical version, it assumes two adsorption states; however, there are obviously surfactants that can adsorb in more than two possible conformations. The experimental data for C14EO4 and C14EO8 (dynamic and equilibrium surface tensions and surface dilational visco-elasticity as measured by bubble profile analysis tensiometry) are used to verify if a reorientation model with more than two possible adsorption states can better describe the complete set data of CnEOm adsorption layers at the water/air interface. The proposed refined theoretical model allows s different states of the adsorbing molecules at the interface. The comparison between the model and experiment demonstrates that, for C14EO4, the assumption of s = 5 adsorption states provides a much better agreement than for s = 2, while for C14EO8, a number of s = 10 adsorption states allows an optimum data description.


2019 ◽  
Vol 3 (4) ◽  
pp. 66 ◽  
Author(s):  
Giuseppe Loglio ◽  
Volodymyr I. Kovalchuk ◽  
Alexey G. Bykov ◽  
Michele Ferrari ◽  
Jürgen Krägel ◽  
...  

In this communication, the single element version of the fractional Maxwell model (single-FMM or Scott–Blair model) is adopted to quantify the observed behavior of the linear interfacial dilational viscoelasticity. This mathematical tool is applied to the results obtained by capillary pressure experiments under low-gravity conditions aboard the International Space Station, for adsorption layers at the hydrocarbon/water interface. Two specific experimental sets of steady-state harmonic oscillations of interfacial area are reported, respectively: a drop of pure water into a Span-80 surfactant/paraffin-oil matrix and a pure n-hexane drop into a C13DMPO/TTAB mixed surfactants/aqueous-solution matrix. The fractional constitutive single-FMM is demonstrated to embrace the standard Maxwell model (MM) and the Lucassen–van-den-Tempel model (L–vdT), as particular cases. The single-FMM adequately fits the Span-80/paraffin-oil observed results, correctly predicting the frequency dependence of the complex viscoelastic modulus and the inherent phase-shift angle. In contrast, the single-FMM appears as a scarcely adequate tool to fit the observed behavior of the mixed-adsorption surfactants for the C13DMPO/TTAB/aqueous solution matrix (despite the single-FMM satisfactorily comparing to the phenomenology of the sole complex viscoelastic modulus). Further speculations are envisaged in order to devise combined FMM as rational guidance to interpret the properties and the interfacial structure of complex mixed surfactant adsorption systems.


2009 ◽  
Vol 113 (40) ◽  
pp. 13398-13404 ◽  
Author(s):  
B. A. Noskov ◽  
D. O. Grigoriev ◽  
A. V. Latnikova ◽  
S.-Y. Lin ◽  
G. Loglio ◽  
...  

Author(s):  
S.F. Corcoran

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.


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