Large Electromechanical Responses Driven by Electrically Induced Dense Ferroelastic Domains: Beyond Morphotropic Phase Boundaries

2020 ◽  
Vol 2 (7) ◽  
pp. 1908-1916
Author(s):  
Mitsumasa Nakajima ◽  
Takao Shimizu ◽  
Hiroshi Nakaki ◽  
Tomoaki Yamada ◽  
Ayumi Wada ◽  
...  
Author(s):  
Y. Kouh Simpson ◽  
C. B. Carter

The structure of spinel/alumina phase boundaries has recently been studied using the selected- area diffraction technique. It has been found that there exist several dominant topotactic relationships; of these, the two most common situations are when the {111} plane of spinel is parallel to either the (0001) plane or the {1120} plane of alumina. In both of these cases, it has been found that there is often a small rotation from exact topotaxy (typically 0° to 2° but with larger rotations possible) which partially eliminates the need for misfit dislocations. This rotation is a special phenomenon that may be unique to non-metallic interfaces such as phase boundaries in ceramics. In this report, a special spinel/alumina interface in which a large rotation from the exact topotaxy exists between the (111) plane of spinel and the (OOOl) plane of alumina is discussed.


Author(s):  
P. J. Goodhew

Cavity nucleation and growth at grain and phase boundaries is of concern because it can lead to failure during creep and can lead to embrittlement as a result of radiation damage. Two major types of cavity are usually distinguished: The term bubble is applied to a cavity which contains gas at a pressure which is at least sufficient to support the surface tension (2g/r for a spherical bubble of radius r and surface energy g). The term void is generally applied to any cavity which contains less gas than this, but is not necessarily empty of gas. A void would therefore tend to shrink in the absence of any imposed driving force for growth, whereas a bubble would be stable or would tend to grow. It is widely considered that cavity nucleation always requires the presence of one or more gas atoms. However since it is extremely difficult to prepare experimental materials with a gas impurity concentration lower than their eventual cavity concentration there is little to be gained by debating this point.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Haijun Wu ◽  
Shoucong Ning ◽  
Moaz Waqar ◽  
Huajun Liu ◽  
Yang Zhang ◽  
...  

AbstractTraditional strategies for improving piezoelectric properties have focused on phase boundary engineering through complex chemical alloying and phase control. Although they have been successfully employed in bulk materials, they have not been effective in thin films due to the severe deterioration in epitaxy, which is critical to film properties. Contending with the opposing effects of alloying and epitaxy in thin films has been a long-standing issue. Herein we demonstrate a new strategy in alkali niobate epitaxial films, utilizing alkali vacancies without alloying to form nanopillars enclosed with out-of-phase boundaries that can give rise to a giant electromechanical response. Both atomically resolved polarization mapping and phase field simulations show that the boundaries are strained and charged, manifesting as head-head and tail-tail polarization bound charges. Such charged boundaries produce a giant local depolarization field, which facilitates a steady polarization rotation between the matrix and nanopillars. The local elastic strain and charge manipulation at out-of-phase boundaries, demonstrated here, can be used as an effective pathway to obtain large electromechanical response with good temperature stability in similar perovskite oxides.


Author(s):  
Imen Fouzaï ◽  
Solène Gentil ◽  
Victor Costa Bassetto ◽  
Wanderson Oliveira Silva ◽  
Raddaoui Maher ◽  
...  

A critical overview of MEA fabrication techniques is given focusing on the formation of triple phase boundaries, known for increasing PEMFC performances. Print-light-synthesis is a new emerging technology to achieve nanostructred MEA.


2021 ◽  
pp. 129965
Author(s):  
Zhong Li ◽  
Jianing Qi ◽  
Zhuangzhuang Li ◽  
Hongxia Li ◽  
Hui Xu ◽  
...  

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