High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications

2021 ◽  
Author(s):  
Yuxiao Fang ◽  
Chun Zhao ◽  
Ivona Z. Mitrovic ◽  
Cezhou Zhao
Keyword(s):  
High Performance ◽  
Gate Dielectrics ◽  
Large Area ◽  
Solution Processed ◽  
Radiation Hardened

High-performance solution-processed large-area transparent self-powered organic near-infrared photodetectors

2021 ◽  
Vol 21 ◽  
pp. 100708
Author(s):  
Y.S. Lau ◽  
Z. Lan ◽  
L. Cai ◽  
F. Zhu
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Infrared Photodetectors ◽  
Large Area ◽  
Solution Processed ◽  
Self Powered

Low temperature cross-linked, high performance polymer gate dielectrics for solution-processed organic field-effect transistors

2015 ◽  
Vol 6 (32) ◽  
pp. 5884-5890 ◽  
Author(s):  
Shengxia Li ◽  
Linrun Feng ◽  
Jiaqing Zhao ◽  
Xiaojun Guo ◽  
Qing Zhang
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Cross Linking ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
High Performance Polymer

Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.

High performance, large area graphene transistors on quasi-free-standing graphene using synthetic hexagonal boron nitride gate dielectrics

2012 ◽  
Author(s):  
Matthew J. Hollander ◽  
Ashish Agrawal ◽  
Michael S. Bresnehan ◽  
Michael LaBella ◽  
Kathleen A. Trumbull ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Performance ◽  
Gate Dielectrics ◽  
Hexagonal Boron Nitride ◽  
Large Area ◽  
Free Standing

scholarly journals Optimization of Quantum Dot Thin Films using Electrohydrodynamic Jet Spraying for Solution-Processed Quantum Dot Light-Emitting Diodes

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Tuan Canh Nguyen ◽  
Thi Thu Thuy Can ◽  
Woon-Seop Choi
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Large Scale ◽  
Light Emitting Diodes ◽  
Good Method ◽  
Large Area ◽  
Solution Processed ◽  
Light Emitting ◽  
Line Method ◽  
Straight Line

Abstract The electrohydrodynamic (EHD) jet spraying process is a good method for making quantum dot (QD) layers in light-emitting diodes (LEDs). However, controlling the morphology and large-scale fabrication of the QD layers are critical for realizing all-solution-processed QD-LEDs with high performance. Three spraying techniques were used with the EHD jet spraying technique: a big circular film method, a spiral-line method, and a straight-line method. These techniques were used to obtain QD films with good uniformity. The straight-line spray showed the most promise to obtain a uniform QD layer with large area, and QD-LEDs made with this method showed better performance with a low turn-on voltage of 3.0 V, a luminance of 7801 cd/m2, and a maximum current efficiency of 2.93 cd/A.

Room-temperature solution-processed high-k gate dielectrics for large area electronics applications

2011 ◽  
Vol 12 (6) ◽  
pp. 955-960 ◽  
Author(s):  
Wan-Yu Lin ◽  
Robert Müller ◽  
Kris Myny ◽  
Sören Steudel ◽  
Jan Genoe ◽  
...  
Keyword(s):  
Room Temperature ◽  
Gate Dielectrics ◽  
Large Area ◽  
Solution Processed ◽  
High K ◽  
Temperature Solution ◽  
Large Area Electronics

scholarly journals Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO2 Thin-Film Transistors and Applications to Circuits

Membranes ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 7
Author(s):  
Christophe Avis ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Industrial Applications ◽  
Operating Conditions ◽  
Curing Temperature ◽  
Sno2 Thin Film ◽  
Large Area ◽  
Solution Processed

Crystalline tin oxide has been investigated for industrial applications since the 1970s. Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and has demonstrated high performance. For large area electronics, TFTs are well suited, but they are subject to various instabilities due to operating conditions, such as positive or negative bias stress PBS (NBS). Another instability is hysteresis, which can be detrimental in operating circuits. Understanding its origin can help fabricating more reliable TFTs. Here, we report an investigation on the origin of the hysteresis of solution-processed polycrystalline SnO2 TFTs. We examined the effect of the carrier concentration in the SnO2 channel region on the hysteresis by varying the curing temperature of the thin film from 200 to 350 °C. Stressing the TFTs characterized further the origin of the hysteresis, and holes trapped in the dielectric are understood to be the main source of the hysteresis. With TFTs showing the smallest hysteresis, we could fabricate inverters and ring oscillators.

scholarly journals Towards all-solution-processed top-illuminated flexible organic solar cells using ultrathin Ag-modified graphite-coated poly(ethylene terephthalate) substrates

Nanophotonics ◽  
2019 ◽  
Vol 8 (2) ◽  
pp. 297-306 ◽  
Author(s):  
Shuanglong Wang ◽  
Yi Zhao ◽  
Hong Lian ◽  
Cuiyun Peng ◽  
Xuyong Yang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
High Performance ◽  
Ethylene Terephthalate ◽  
Bending Test ◽  
Large Area ◽  
Solution Processed ◽  
Poly Ethylene Terephthalate ◽  
Poly Ethylene ◽  
Flexible Organic Solar Cells

AbstractAll-solution-processed flexible organic solar cells (FOSCs) with high power conversion efficiency (PCE) are the prerequisite for application in low-cost, large-area, flexible, photovoltaic devices. In this work, high-performance, top-illuminated FOSCs using ultrathin Ag-modified graphite-coated poly(ethylene terephthalate) (PET) substrates are demonstrated. The ultrathin Ag-modified graphite/PET substrates have excellent electric conductivity, mechanical flexibility, and easy processability for FOSCs. A PCE of 5.31% for FOSCs, based on the blend system poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo [1,2-b:4,5-b′]dith-iophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]: [6,6]-phenyl-C7l-but-yric acid methyl ester, having a bilayer of MoOx/Ag upper transparent anode is demonstrated. Top-illuminated FOSCs with a transparent upper electrode of solution-processed Ag nanowires also yielded a PCE of 3.76%. All-solution-processed FOSCs exhibit excellent mechanical flexibility and retain >81% of the initial efficiency after 500 cycles of bending test. Furthermore, graphite-based electrodes demonstrate good heat-insulation properties. The outcomes of this work offer an alternative to fabricate high-performance, all-solution-processable, top-illuminated FOSCs, providing a commercially viable approach for application in large-area solar cells that can be prepared by printing and roll-to-roll fabrication processes.

scholarly journals One-Volt, Solution-Processed Organic Transistors with Self-Assembled Monolayer-Ta2O5 Gate Dielectrics

Materials ◽  
2019 ◽  
Vol 12 (16) ◽  
pp. 2563 ◽  
Author(s):  
Navid Mohammadian ◽  
Sheida Faraji ◽  
Srikrishna Sagar ◽  
Bikas C. Das ◽  
Michael L. Turner ◽  
...  
Keyword(s):  
Low Voltage ◽  
Gate Dielectrics ◽  
Low Cost ◽  
Tantalum Pentoxide ◽  
Organic Thin Film ◽  
Large Area ◽  
Self Assembled Monolayer ◽  
Solution Processed ◽  
Saturation Field ◽  
Self Assembled

Low-voltage, solution-processed organic thin-film transistors (OTFTs) have tremendous potential to be key components in low-cost, flexible and large-area electronics. However, for these devices to operate at low voltage, robust and high capacitance gate dielectrics are urgently needed. Herein, the fabrication of OTFTs that operate at 1 V is reported. These devices comprise a solution-processed, self-assembled monolayer (SAM) modified tantalum pentoxide (Ta2O5) as the gate dielectric. The morphology and dielectric properties of the anodized Ta2O5 films with and without n-octadecyltrichlorosilane (OTS) SAM treatment have been studied. The thickness of the Ta2O5 film was optimized by varying the anodization voltage. The results show that organic TFTs gated with OTS-modified tantalum pentoxide anodized at 3 V (d ~7 nm) exhibit the best performance. The devices operate at 1 V with a saturation field-effect mobility larger than 0.2 cm2 V−1 s−1, threshold voltage −0.55 V, subthreshold swing 120 mV/dec, and current on/off ratio in excess of 5 × 103. As a result, the demonstrated OTFTs display a promising performance for applications in low-voltage, portable electronics.

scholarly journals Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

2015 ◽  
Vol 112 (11) ◽  
pp. 3217-3222 ◽  
Author(s):  
Xinge Yu ◽  
Jeremy Smith ◽  
Nanjia Zhou ◽  
Li Zeng ◽  
Peijun Guo ◽  
...  
Keyword(s):  
Combustion Synthesis ◽  
High Performance ◽  
Low Cost ◽  
Sol Gel ◽  
Amorphous State ◽  
Single Step ◽  
Spray Combustion ◽  
Indium Gallium Zinc Oxide ◽  
Large Area ◽  
Solution Processed

Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.

Polymer Gate Dielectrics for High Performance Organic Field-Effect Transistors

2006 ◽  
Vol 937 ◽  
Author(s):  
Faruk Altan Yildirim ◽  
Ronald Meixner ◽  
Robert Roman Schliewe ◽  
Wolfgang Bauhofer ◽  
Holger Goebel ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Volume Resistivity ◽  
Dielectric Materials ◽  
Semiconductor Layer ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
Metal Insulator Metal

ABSTRACTSolution-processed bottom-gate organic field-effect transistors (OFET) with different dielectric materials were produced and characterized. As the active semiconductor layer, regioregular poly(3-hexylthiophene) (rr-P3HT) was used. In addition to the dielectrics which have been reported in literature, various other materials with simple processing conditions were used as gate-dielectrics. Also, the dielectric properties of the polymeric layers were investigated in metal-insulator-metal capacitor structures, where the thicknesses of the films were exactly the same as they were in the OFETs. The specific volume resistivity and dielectric constant values determined were then used to explain the electrical behavior of OFETs. The devices having BCB, SU-8 and NOA74 as the dielectric layers exhibited the desired transistor characteristics, whereas the transistors with Avatrel dielectric did not, due to higher gate-leakages. As a result, SU-8 and NOA74 resins were proven to be good candidates for gate-dielectric usage in solution-processed all-polymer OFETs.

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