scholarly journals Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

2015 ◽  
Vol 112 (11) ◽  
pp. 3217-3222 ◽  
Author(s):  
Xinge Yu ◽  
Jeremy Smith ◽  
Nanjia Zhou ◽  
Li Zeng ◽  
Peijun Guo ◽  
...  
Keyword(s):  
Combustion Synthesis ◽  
High Performance ◽  
Low Cost ◽  
Sol Gel ◽  
Amorphous State ◽  
Single Step ◽  
Spray Combustion ◽  
Indium Gallium Zinc Oxide ◽  
Large Area ◽  
Solution Processed

Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.

Solution-Processed All-Oxide Transparent High-Performance Transistors Fabricated by Spray-Combustion Synthesis

2016 ◽  
Vol 2 (4) ◽  
pp. 1500427 ◽  
Author(s):  
Binghao Wang ◽  
Xinge Yu ◽  
Peijun Guo ◽  
Wei Huang ◽  
Li Zeng ◽  
...  
Keyword(s):  
Combustion Synthesis ◽  
High Performance ◽  
Spray Combustion ◽  
Solution Processed

Organic field-effect transistors based on tetrathiafulvalene derivatives

2008 ◽  
Vol 80 (11) ◽  
pp. 2405-2423 ◽  
Author(s):  
Xike Gao ◽  
Wenfeng Qiu ◽  
Yunqi Liu ◽  
Gui Yu ◽  
Daoben Zhu
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Device Fabrication ◽  
Organic Field Effect Transistors ◽  
Large Area ◽  
Solution Processed

In recent years, tetrathiafulvalene (TTF) and its derivatives have been used as semiconducting materials for organic field-effect transistors (OFETs). In this review, we summarize the recent progress in the field of TTF-based OFETs. We introduce the structure and operation of OFETs, and focus on TTF derivatives used in OFETs. TTF derivatives used in OFETs can be divided into three parts by the semiconductor's morphology and the device fabrication technique: (1) TTF derivatives used for single-crystal OFETs, (2) TTF derivatives used for vacuum-deposited thin-film OFETs, and (3) TTF derivatives used for solution-processed thin-film OFETs. The single-crystal OFETs based on TTF derivatives were fabricated by drop-casting method and showed high performance, with the mobility up to 1.4 cm2/Vs. The vacuum-deposited thin-film OFETs based on TTF derivatives were well developed, some of which have shown high performance comparable to that of amorphous silicon, with good air-stability. Although the mobilities of most solution-processed OFETs based on TTF derivatives are limited at 10-2 cm2/Vs, the study on solution-processable TTF derivatives and their devices are promising, because of their low-cost, large-area-coverage virtues. The use of organic charge-transfer (OCT) compounds containing TTF or its derivatives in OFETs is also included in this review.

scholarly journals A simple approach to prepare fluorescent molecularly imprinted nanoparticles

RSC Advances ◽  
2021 ◽  
Vol 11 (13) ◽  
pp. 7732-7737
Author(s):  
Fenying Wang ◽  
Dan Wang ◽  
Tingting Wang ◽  
Yu Jin ◽  
Baoping Ling ◽  
...  
Keyword(s):  
High Performance ◽  
Low Cost ◽  
Sol Gel ◽  
Silica Sol ◽  
Simple Approach ◽  
Imprinted Polymer ◽  
Molecularly Imprinted ◽  
Low Toxicity ◽  
Good Biocompatibility ◽  
Molecularly Imprinted Nanoparticles

Fluorescent molecularly imprinted polymer (FMIP) gains great attention in many fields due to their low cost, good biocompatibility and low toxicity. Here, a high-performance FMIP was prepared based on the autocatalytic silica sol–gel reaction.

Solution-processed whispering-gallery-mode microsphere lasers based on colloidal CsPbBr3 perovskite nanocrystals

2021 ◽  
Author(s):  
Minghong Xie ◽  
Wenxiao Gong ◽  
Lei Kong ◽  
Yang Liu ◽  
Yang Mi ◽  
...  
Keyword(s):  
High Performance ◽  
Low Cost ◽  
Single Mode ◽  
Whispering Gallery Mode ◽  
Solution Processed ◽  
Time Resolved ◽  
Perovskite Nanocrystals ◽  
Whispering Gallery ◽  
Low Threshold ◽  
The Stability

Abstract Perovskite nanocrystals (NCs) have emerged as attractive gain materials for solution-processed microlasers. Despite the recent surge of reports in this feld, it is still challenging to develop low-cost perovskite NCbased microlasers with high performance. Herein, we demonstrate low-threshold, spectrally tunable lasing from ensembles of CsPbBr3 NCs deposited on silica microspheres. Multiple whispering-gallery-mode lasing is achieved from individual NC/microspheres with a low threshold of ∼3.1 µJ cm−2 and cavity quality factor of ∼1193. Through time-resolved photoluminescence measurements, electron-hole plasma recombination is elucidated as the lasing mechanism. By tuning the microsphere diameter, the desirable single-mode lasing is successfully achieved. Remarkably, the CsPbBr3 NCs display durable room-temperature lasing under ∼107 shots of pulsed laser excitation, substantially exceeding the stability of conventional colloidal NCs. These CsPbBr3 NC-based microlasers can be potentially useful in photonic applications.

scholarly journals High-performance thermoelectric silver selenide thin films cation exchanged from a copper selenide template

2020 ◽  
Vol 2 (1) ◽  
pp. 368-376 ◽  
Author(s):  
Nan Chen ◽  
Michael R. Scimeca ◽  
Shlok J. Paul ◽  
Shihab B. Hafiz ◽  
Ze Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Cation Exchange ◽  
High Performance ◽  
Low Cost ◽  
Copper Selenide ◽  
Silver Selenide ◽  
Solution Processed

A high-performance n-type thermoelectric Ag2Se thin film via cation exchange using a low-cost solution processed Cu2Se template.

Fabrication of polysiloxane-modified polyurethane sponge as low-cost organics/water separation and selective absorption material

2016 ◽  
Vol 74 (8) ◽  
pp. 1936-1945 ◽  
Author(s):  
Zhengshan Cui ◽  
Wanxia He ◽  
Jun Liu ◽  
Wei Wei ◽  
Liang Jiang ◽  
...  
Keyword(s):  
Contact Angle ◽  
Mechanical Stability ◽  
Low Cost ◽  
Sol Gel ◽  
Dip Coating ◽  
Selective Absorption ◽  
Large Area ◽  
Water Separation ◽  
Good Thermal Stability ◽  
Polyurethane Sponge

Through sol-gel and dip-coating processes, commercial polyurethane sponge modified by polysiloxane was fabricated under low temperature (60 °C) and atmosphere. The contact angle of the obtained polysiloxane/polyurethane sponge is 145 ± 5°. Hence, the polysiloxane/polyurethane sponge could float on water and selectively absorb organics from the surface of the water, indicating simultaneous properties of hydrophobicity and oleophilicity. The absorbent maximum value is 50–150 times of its own weight. The polysiloxane/polyurethane sponge exhibited excellent recyclability, which could be reused by squeezing the sponge due to its high mechanical stability and flexibility. Thermogravimetry-differential thermal analysis test indicated that the polysiloxane/polyurethane sponge exhibited good thermal stability and the stable contact angle of samples tested under increasing temperature indicated its good weather resistance. Due to the commercial property of polyurethane sponge and easy-handling of polysiloxane, the polysiloxane/polyurethane sponge can be easily scaled up to recover a large-area oil spill in water and further work based on the designed equipment has been under consideration.

Dielectric and I-V Characteristic of Lead Titanate Thin Films Prepared on ITO Glass Substrate

2015 ◽  
Vol 1109 ◽  
pp. 461-465 ◽  
Author(s):  
Nurbaya Zainal ◽  
Mohd Hafiz Wahid ◽  
Mohammad Rusop
Keyword(s):  
Thin Films ◽  
Lead Titanate ◽  
High Performance ◽  
Annealing Temperature ◽  
Low Cost ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Ito Glass

Performance of lead titanate, (PbTiO3) thin films have been successfully investigated on microstructural properties, I-V characteristic, dielectric properties, and ferroelectric properties. PbTiO3offers variety of application as transducer, ferroelectric random access memory, transistor, high performance capacitor, sensor, and many more due to its ferroelectric behavior. Preparation of the films are often discussed in order to improve the structural properties, like existence of grain boundaries, particle uniformity, presents of microcrack films, porosities, and many more. Yet, researchers still prepare PbTiO3thin films at high crystallization temperature, certainly above than 600 ̊C to obtain single crystal perovskite structure that would be the reason to gain high spontaneous polarization behavior. Although this will results to high dielectric constant value, the chances that leads to high leakage current is a major failure in device performance. Thus, preparation the thin films at low annealing temperature quite an essential study which is more preferable deposited on low-cost soda lime glass. The study focuses on low annealing temperature of PbTiO3thin films through sol-gel spin coating method and undergo for dielectric and I-V measurements.

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

2010 ◽  
Vol 10 (1) ◽  
pp. 45-50 ◽  
Author(s):  
K. K. Banger ◽  
Y. Yamashita ◽  
K. Mori ◽  
R. L. Peterson ◽  
T. Leedham ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
On Chip

Integration of OLEDs in Textiles

2012 ◽  
Vol 80 ◽  
pp. 14-21 ◽  
Author(s):  
Silvia Janietz ◽  
Björn Gruber ◽  
Sylvia Schattauer ◽  
Kerstin Schulze
Keyword(s):  
Low Cost ◽  
Glass Fibers ◽  
Hole Transport ◽  
Light Sources ◽  
Electronic Textiles ◽  
Large Area ◽  
Solution Processed ◽  
Hole Transport Layers ◽  
First Results ◽  
Planar Substrates

In place of silicon, which is normally used in microelectronics, organic materials offer the opportunity to produce devices on large area, low-cost and plastic planar substrates. These materials are attracting increased attention also in the field of electronic-textiles (e-textiles) because they show an interesting combination of electronic and mechanical properties that can be favourably exploited in smart textiles. A key step for the integration of mass production of e-textiles is to combine electronic production with textile manufactures. In the last years, progress has been achieved in the development of fibers and their processing for application in e-textiles. The application ranged from fabric integrated light sources to low cost solid state lighting for protection and security. Here research results are presented regarding the integration of encapsulated glass OLEDs and additionally OLEDs fabricated on flexible high barrier substrates which were integrated into textiles. On the other hand, the first results concerning the realization of an OLED on cylindrical surfaces based on solution processed technologies which is a first step in the direction of low cost processing will be discussed. A simple, inverted planar construction prepared from solution was realized. This preliminary work was the precondition for the development of a fiber based OLED. In addition, OLEDs that were prepared using glass fibers as substrates and solution processed active and hole-transport layers will be shown.

Sign in / Sign up

Export Citation Format

Share Document