In Situ GISAXS Observation and Large Area Homogeneity Study of Slot-Die Printed PS-b-P4VP and PS-b-P4VP/FeCl3 Thin Films

Author(s):  
Shanshan Yin ◽  
Ting Tian ◽  
Christian L. Weindl ◽  
Kerstin S. Wienhold ◽  
Qing Ji ◽  
...  
2003 ◽  
Vol 17 (04n06) ◽  
pp. 779-784 ◽  
Author(s):  
M. G. MAGLIONE ◽  
F. CHIARELLA ◽  
R. DI CAPUA ◽  
R. VAGLIO ◽  
M. SALVATO ◽  
...  

MgB 2 thin films were grown in-situ at INFM- University of Naples by a magnetron sputtering technique in a UHV system (10-7 Pa) equipped with 3 focused 2′′ magnetron sources (a stoichiometric MgB 2 and metallic Mg and B targets by Superconducting Components Inc.). The substrates (sapphire or MgO) were placed "on axis" at 7 cm from the target surface on the surface of a molybdenum heater that could be operated up to 1000°C under vacuum. Best results were obtained codepositing MgB 2 and Mg at equal sputtering power (500W) for 10 min on cold substrates, resulting in a Mg rich Mg-B precursor film. The films were then annealed inhyphen;situ at 830°C for 10 min in a In sealed Nb box in presence of saturated Mg vapor. The process is highly reproducible and can be easily scaled to produce large area films. The resulting films were about 1μm thick, with 100nm surface roughness as measured by AFM Resistive transition showed a maximum T c of 35 K and a transition width lower than 0.5 K. The residual resistivity ratio was 1.6 for the best sample. Resistivity measurements in external magnetic field up to 8 T have been performed both in parallel and perpendicular configuration. The upper critical magnetic field vs. temperature behavior has been determined from the experimental data and the superconducting anisotropy has been calculated for samples with different T c .


2020 ◽  
Vol 12 (51) ◽  
pp. 57627-57637
Author(s):  
Nian Li ◽  
Wei Chen ◽  
Lin Song ◽  
Renjun Guo ◽  
Manuel A. Scheel ◽  
...  

2016 ◽  
Vol 78 (5-10) ◽  
Author(s):  
S. Malik ◽  
Fatin Hana Naning ◽  
Azyuni Aziz

Various techniques have been used to prepare polymer nanocomposite thin films that involve tedious work and consume considerable amount of materials and time. In this study, nanocomposite thin films of poly (3-hexylthiophene -2, 5-diyl) (P3HT), stearic acid and CdSe nanoparticles were fabricated by a stamping method which is a modification of Langmuir Schaefer technique. The CdSe nanoparticles were then grown in-situ between subsequent layers of thin film by gas exposure technique. Their surface-pressure (-A) isotherms and morphology were investigated. The surface-pressure isotherms revealed that, impurities in water subphase affect the profile of Langmuir monolayer. Stearic acid was found to be more dominant as compared to P3HT. The modified Langmuir Schaefer technique produced fairly smooth, large area nanocomposite thin films as shown by the AFM images. A prominent advantage of this procedure is that it requires only small amount of materials.


1994 ◽  
Vol 341 ◽  
Author(s):  
M. Lorenz ◽  
H. Hochmuth ◽  
H. Börner ◽  
D. Natusch ◽  
K. Kreher

AbstractAn arrangement for large area PLD on 3-inch wafers is proposed. In order to get a homogeneous stoichiometry and thickness distribution and small variations of superconducting properties on the 3-inch diameter, the substrate is foreseen to be rotated and additionally laterally moved up to 45 mm during deposition whereas the laser plume remains fixed.YSZ buffer layers showed thickness homogeneity of 1% within 10 mm, of 4% within 2 inch and of 8% within 3 inch diameter, respectively. For in-situ deposited YBCO thin films on r-plane sapphire with YSZ buffer layer we inductively measured within 3 inch diameter values of the critical temperature Tc(90%) from 85.9 K to 86.7 K and values of the critical current density jc(77 K) from 1 × 106 to 2 × 106 A/cm2. However, up to now the degree of epitaxy of the YBCO thin films on r-plane sapphire with YSZ buffer layer is lower compared to YBCO on MgO(100) as determined by Raman spectroscopy. Nevertheless, large area PLD seems to be a very promising technique for homogeneous coating of 3-inch wafers by epitaxial oxide thin films.


2016 ◽  
Vol 4 (23) ◽  
pp. 9124-9132 ◽  
Author(s):  
Xiaomin Chen ◽  
Huanqi Cao ◽  
Hao Yu ◽  
Hao Zhu ◽  
Huanping Zhou ◽  
...  

Large-area high-quality MAPbI3 films were fabricated via a controlled vapor–solid reaction monitored by in situ resistance measurement.


Science ◽  
2021 ◽  
Vol 372 (6548) ◽  
pp. 1327-1332
Author(s):  
Tongle Bu ◽  
Jing Li ◽  
Hengyi Li ◽  
Congcong Tian ◽  
Jie Su ◽  
...  

Upscaling efficient and stable perovskite layers is one of the most challenging issues in the commercialization of perovskite solar cells. Here, a lead halide–templated crystallization strategy is developed for printing formamidinium (FA)–cesium (Cs) lead triiodide perovskite films. High-quality large-area films are achieved through controlled nucleation and growth of a lead halide•N-methyl-2-pyrrolidone adduct that can react in situ with embedded FAI/CsI to directly form α-phase perovskite, sidestepping the phase transformation from δ-phase. A nonencapsulated device with 23% efficiency and excellent long-term thermal stability (at 85°C) in ambient air (~80% efficiency retention after 500 hours) is achieved with further addition of potassium hexafluorophosphate. The slot die–printed minimodules achieve champion efficiencies of 20.42% (certified efficiency 19.3%) and 19.54% with an active area of 17.1 and 65.0 square centimeters, respectively.


1993 ◽  
Vol 3 (1) ◽  
pp. 1679-1682 ◽  
Author(s):  
J.K. Truman ◽  
W.R. White ◽  
P.H. Ballentine ◽  
D.S. Mallory ◽  
A.M. Kadin

Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.


Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).


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