Chemical Vapor Deposited Graphene-Based Derivative As High-Performance Hole Transport Material for Organic Photovoltaics

2016 ◽  
Vol 8 (36) ◽  
pp. 23844-23853 ◽  
Author(s):  
Andrea Capasso ◽  
Luigi Salamandra ◽  
Giuliana Faggio ◽  
Theodoros Dikonimos ◽  
Francesco Buonocore ◽  
...  
Keyword(s):  
Organic Photovoltaics ◽  
High Performance ◽  
Chemical Vapor ◽  
Hole Transport ◽  
Chemical Vapor Deposited

scholarly journals High-Performance Polymers Sandwiched with Chemical Vapor Deposited Hexagonal Boron Nitrides as Scalable High-Temperature Dielectric Materials

2017 ◽  
Vol 29 (35) ◽  
pp. 1701864 ◽  
Author(s):  
Amin Azizi ◽  
Matthew R. Gadinski ◽  
Qi Li ◽  
Mohammed Abu AlSaud ◽  
Jianjun Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
High Performance ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
High Performance Polymers ◽  
Boron Nitrides ◽  
Chemical Vapor Deposited

Optoelectrical properties of high-performance low-pressure chemical vapor deposited phosphorus-doped polysilicon layers for passivating contact solar cells

2020 ◽  
Vol 699 ◽  
pp. 137886
Author(s):  
Pradeep Padhamnath ◽  
Nitin Nampalli ◽  
Naomi Nandakumar ◽  
Jammaal Kitz Buatis ◽  
Marvic-John Naval ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Phosphorus Doped

Toward 300 mm Wafer-Scalable High-Performance Polycrystalline Chemical Vapor Deposited Graphene Transistors

ACS Nano ◽  
2014 ◽  
Vol 8 (10) ◽  
pp. 10471-10479 ◽  
Author(s):  
Somayyeh Rahimi ◽  
Li Tao ◽  
Sk. Fahad Chowdhury ◽  
Saungeun Park ◽  
Alex Jouvray ◽  
...  
Keyword(s):  
High Performance ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

High-performance chemical vapor deposited graphene-on-silicon nitride waveguide photodetectors

2018 ◽  
Vol 43 (6) ◽  
pp. 1399 ◽  
Author(s):  
Yun Gao ◽  
Guodong Zhou ◽  
Ni Zhao ◽  
Hon Ki Tsang ◽  
Chester Shu
Keyword(s):  
Silicon Nitride ◽  
High Performance ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

Ultra-smooth and robust graphene-based hybrid anode for high-performance flexible organic light-emitting diodes

2021 ◽  
Author(s):  
zhikun zhang ◽  
lianlian xia ◽  
Lizhao Liu ◽  
Yuwen Chen ◽  
zuozhi wang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Chemical Vapor ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Large Particles

Large surface roughness, especially caused by the large particles generated during both the transfer and the doping processes of graphene grown by chemical vapor deposition (CVD) is always a critical...

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