scholarly journals High-Performance Polymers Sandwiched with Chemical Vapor Deposited Hexagonal Boron Nitrides as Scalable High-Temperature Dielectric Materials

2017 ◽  
Vol 29 (35) ◽  
pp. 1701864 ◽  
Author(s):  
Amin Azizi ◽  
Matthew R. Gadinski ◽  
Qi Li ◽  
Mohammed Abu AlSaud ◽  
Jianjun Wang ◽  
...  
2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.


2016 ◽  
Vol 8 (36) ◽  
pp. 23844-23853 ◽  
Author(s):  
Andrea Capasso ◽  
Luigi Salamandra ◽  
Giuliana Faggio ◽  
Theodoros Dikonimos ◽  
Francesco Buonocore ◽  
...  

Carbon ◽  
2013 ◽  
Vol 65 ◽  
pp. 365-370 ◽  
Author(s):  
Sheng Liu ◽  
Jin-long Liu ◽  
Cheng-ming Li ◽  
Jian-chao Guo ◽  
Liang-xian Chen ◽  
...  

1992 ◽  
Vol 283 ◽  
Author(s):  
Sunwoo Lee ◽  
Thuong Ton ◽  
D. Zych ◽  
P. A. Dowben

ABSTRACTPlasma-enhanced chemical vapor deposited boron carbide (B1-xCx) thin films are shown to be a potential electronic material suitable for high temperature devices. The boron carbide films make excellent p-n heteroj unction diodes with /i-type silicon substrates. The B1-xCx/Si heteroj unction diodes are demonstrated to have rectifying properties at temperatures above 200°C and reverse current is strongly dependent on the energy of the band gap of the boron carbide films.


Polymers ◽  
2019 ◽  
Vol 11 (5) ◽  
pp. 766 ◽  
Author(s):  
Junyi Yang ◽  
Zili Tang ◽  
Hang Yin ◽  
Yan Liu ◽  
Ling Wang ◽  
...  

In order to develop high-performance dielectric materials, poly(arylene ether nitrile)-based composites were fabricated by employing surface-hydroxylated calcium copper titanate (CCTO) particles. The results indicated that the surface hydroxylation of CCTO effectively improved the interfacial compatibility between inorganic fillers and the polymer matrix. The composites exhibit not only high glass transition temperatures and an excellent thermal stability, but also excellent flexibility and good mechanical properties, with a tensile strength over 60 MPa. Furthermore, the composites possess enhanced permittivity, relatively low loss tangent, good permittivity-frequency stability and dielectric-temperature stability under 160 °C. Therefore, it furnishes an effective path to acquire high-temperature-resistant dielectric materials for various engineering applications.


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