Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C

Author(s):  
So-Jung Yoon ◽  
Seung-Bo Ko ◽  
Nak-Jin Seong ◽  
Kyujeong Choi ◽  
Woong-Chul Shin ◽  
...  
2012 ◽  
Vol 51 (2S) ◽  
pp. 02BF04 ◽  
Author(s):  
Yumi Kawamura ◽  
Mai Tani ◽  
Nozomu Hattori ◽  
Naomasa Miyatake ◽  
Masahiro Horita ◽  
...  

2012 ◽  
Vol 51 (2) ◽  
pp. 02BF04 ◽  
Author(s):  
Yumi Kawamura ◽  
Mai Tani ◽  
Nozomu Hattori ◽  
Naomasa Miyatake ◽  
Masahiro Horita ◽  
...  

2021 ◽  
Vol 52 (S2) ◽  
pp. 472-476
Author(s):  
Qi Li ◽  
Huijin Li ◽  
Junchen Dong ◽  
Jingyi Wang ◽  
Dedong Han ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.


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