Low-Temperature Process Compatibility for the Oxide Thin Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition at 150°C
2017 ◽
Vol 9
(27)
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pp. 22676-22684
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2012 ◽
Vol 51
(2S)
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pp. 02BF04
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2011 ◽
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2012 ◽
Vol 18
(6)
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pp. 1055-1060
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2012 ◽
Vol 51
(2)
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pp. 02BF04
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2014 ◽
Vol 61
(1)
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pp. 73-78
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