Stacking Modes-Induced Chemical Reactivity Differences on Chemical Vapor Deposition-Grown Trilayer Graphene

For the metalorganic chemical vapor deposition (MOCVD) of copper, (hfac)Cu(VTMS) (hfac = hexafluoroacetylacetonate, VTMS = vinyltrimethylsilane) and (hfac)Cu(ATMS) (ATMS = allyltrimethylsilane) were compared, and the effect of L ligand in (hfac)Cu–L was examined. It was found by 1H-NMR (nuclear magnetic resonance) that the thermal stability of (hfac)Cu(VTMS) was better than that of (hfac)Cu(ATMS) due to the relatively weak Cu–ATMS bond. From in situ Fourier transform infrared spectroscopy (FTIR) experiments, the formation of Cu(hfac)2, the product of disproportion reaction of Cu(hfac), was observed in the gas phase and (hfac)Cu(ATMS) was found to be more reactive to form Cu(hfac)2. The minimum temperature for the deposition of copper films from (hfac)Cu(ATMS) was as low as 60 °C, which was about 70 °C lower than from (hfac)Cu(VTMS). The grain size of the film deposited with (hfac)Cu(ATMS) was substantially larger than that with (hfac)Cu(VTMS), which showed that the chemical reactivity of the precursor had an influence on the microstructure along with the deposition temperature.

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Chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapor deposition with silane precursor

Materials Science and Engineering B ◽

10.1016/0921-5107(93)90083-y ◽

1993 ◽

Vol 17 (1-3) ◽

pp. 77-81

Author(s):

G. Jursich ◽

K. Mulderink ◽

W. Von Drasek

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Gas Flow ◽

Chemical Reactivity ◽

Chemical Vapor ◽

Flow Dynamics ◽

Pressure Chemical ◽

Silane Precursor

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In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100137653 ◽

1995 ◽

Vol 53 ◽

pp. 256-257

Author(s):

J. Drucker ◽

R. Sharma ◽

J. Kouvetakis ◽

K.H.J. Weiss

Keyword(s):

Electron Beam ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Quantum Effect ◽

Line Drawing ◽

Chemical Vapor ◽

Environmental Cell ◽

Engineering Changes ◽

Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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The relaxation of compressive biaxial strains in SOS via microtwins

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100155013 ◽

1989 ◽

Vol 47 ◽

pp. 608-609

Author(s):

M. E. Twigg ◽

E. D. Richmond ◽

J. G. Pellegrino

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Compressive Stress ◽

Vapor Deposition ◽

Partial Dislocation ◽

Molecular Beam ◽

Volume Fraction ◽

Chemical Vapor ◽

Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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