Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.
Synthesis, characterization, and use of an amidoalane precursor for the deposition of high-quality and low-impurity aluminum nitride films by atomic layer deposition. This study highlights the importance of smart precursor design in order to deposit high-quality thin films at low cost and high efficiency.
Self-limiting growth of high quality binary BaO and BaTiO3 using a novel class of Ba precursor at lowest temperature ever reported and shown to cover non planar structures.
A Low Cost, High Efficiency TMA-Replacement for the Deposition of High-Quality Aluminum Nitride by Atomic Layer Deposition