Nanoscale-Thick Ni-Based Half-Heusler Alloys with Structural Ordering-Dependent Ultralow Magnetic Damping: Implications for Spintronic Applications

Half-metallicity, low magnetic damping and high Curie temperatures (TC) are crucial for application in spintronics and full Heusler alloys are promising in this regard.

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Tunnel magnetoresistance effect and magnetic damping in half-metallic Heusler alloys

Philosophical Transactions of The Royal Society A Mathematical Physical and Engineering Sciences ◽

10.1098/rsta.2011.0011 ◽

2011 ◽

Vol 369 (1948) ◽

pp. 3037-3053 ◽

Cited By ~ 20

Author(s):

M. Oogane ◽

S. Mizukami

Keyword(s):

Spin Polarization ◽

High Spin ◽

Heusler Alloy ◽

Heusler Alloys ◽

Magnetoresistance Effect ◽

Half Metallicity ◽

Half Metallic ◽

Tunnel Magnetoresistance ◽

Magnetic Damping ◽

High Spin Polarization

Some full-Heusler alloys, such as Co 2 MnSi and Co 2 MnGe, are expected to be half-metallic ferromagnetic material, which has complete spin polarization. They are the most promising materials for realizing half-metallicity at room temperature owing to their high Curie temperature. We demonstrate a huge tunnel magnetoresistance effect in a magnetic tunnel junction using a Co 2 MnSi Heusler alloy electrode. This result proves high spin polarization of the Heusler alloy. We also demonstrate a small magnetic damping constant in Co 2 FeAl epitaxial film. The very high spin polarization and small magnetic constant of Heusler alloys will be a great advantage for future spintronic device applications.

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Structural ordering tendencies in the new ferromagnetic Ni–Co–Fe–Ga–Zn Heusler alloys

Physics Procedia ◽

10.1016/j.phpro.2010.11.090 ◽

2010 ◽

Vol 10 ◽

pp. 144-148 ◽

Cited By ~ 2

Author(s):

Antje Dannenberg ◽

Mario Siewert ◽

Markus E. Gruner ◽

Manfred Wuttig ◽

Peter Entel

Keyword(s):

Heusler Alloys ◽

Structural Ordering

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High spin mixing conductance and spin interface transparency at the interface of a Co2Fe0.4Mn0.6Si Heusler alloy and Pt

NPG Asia Materials ◽

10.1038/s41427-020-00268-7 ◽

2021 ◽

Vol 13 (1) ◽

Author(s):

Braj Bhusan Singh ◽

Koustuv Roy ◽

Pushpendra Gupta ◽

Takeshi Seki ◽

Koki Takanashi ◽

...

Keyword(s):

High Spin ◽

Heusler Alloys ◽

Hall Voltage ◽

Spin Pumping ◽

Magnetic Damping ◽

Spin Polarized ◽

Inverse Spin Hall Effect ◽

Interface Transparency ◽

Full Heusler ◽

Full Heusler Alloys

AbstractFerromagnetic materials exhibiting low magnetic damping (α) and moderately high-saturation magnetization are required from the viewpoints of generation, transmission, and detection of spin waves. Since spin-to-charge conversion efficiency is another important parameter, high spin mixing conductance $$({g_{r}^{\uparrow \downarrow}})$$ ( g r ↑ ↓ ) is the key for efficient spin-to-charge conversion. Full Heusler alloys, e.g., Co2Fe0.4Mn0.6Si (CFMS), which are predicted to be 100% spin-polarized, exhibit low α. However, $$g_r^{ \uparrow \downarrow }$$ g r ↑ ↓ at the interface between CFMS and a paramagnet is not fully understood. Here, we report investigations of spin pumping and the inverse spin Hall effect in CFMS/Pt bilayers. Damping analysis indicates the presence of significant spin pumping at the interface of CFMS and Pt, which is also confirmed by the detection of an inverse spin Hall voltage. We show that in CFMS/Pt, $$g_r^{ \uparrow \downarrow }$$ g r ↑ ↓ (1.70 × 1020 m−2) and the interface transparency (83%) are higher than the values reported for other ferromagnetic/heavy metal systems. We observed a spin Hall angle of ~0.026 for the CFMS/Pt bilayer system.

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Magnetoelastic interactions and magnetic damping in Co2Fe0.4Mn0.6Si and Co2FeGa0.5Ge0.5 Heusler alloys thin films for spintronic applications

Scientific Reports ◽

10.1038/s41598-021-87205-y ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

O. M. Chumak ◽

A. Pacewicz ◽

A. Lynnyk ◽

B. Salski ◽

T. Yamamoto ◽

...

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Layer Thickness ◽

Heusler Alloys ◽

Magnetic Layer ◽

Spin Pumping ◽

Magnetic Damping ◽

Spintronic Devices ◽

Damping Parameter ◽

High Spin Polarization

AbstractCo2Fe0.4Mn0.6Si (CFMS) and Co2FeGa0.5Ge0.5 (CFGG) Heusler alloys are among the most promising thin film materials for spintronic devices due to a high spin polarization, low magnetic damping and giant/tunneling magnetoresistance ratios. Despite numerous investigations of Heusler alloys magnetic properties performed up to now, magnetoelastic effects in these materials remain not fully understood; due to quite rare studies of correlations between magnetoelastic and other magnetic properties, such as magnetic dissipation or magnetic anisotropy. In this research we have investigated epitaxial CFMS and CFGG Heusler alloys thin films of thickness in the range of 15–50 nm. We have determined the magnetoelastic tensor components and magnetic damping parameters as a function of the magnetic layer thickness. Magnetic damping measurements revealed the existence of non-Gilbert dissipation related contributions, including two-magnon scattering and spin pumping phenomena. Magnetoelastic constant B11 values and the effective magnetic damping parameter αeff values were found to be in the range of − 6 to 30 × 106 erg/cm3 and between 1 and 12 × 10–3, respectively. The values of saturation magnetostriction λS for CFMS Heusler alloy thin films were also obtained using the strain modulated ferromagnetic resonance technique. The correlation between αeff and B11, depending on magnetic layer thickness was determined based on the performed investigations of the above mentioned magnetic properties.

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Structural and Transport Properties of Ni45Mn40In15 Thin Films

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.233-234.670 ◽

2015 ◽

Vol 233-234 ◽

pp. 670-673 ◽

Cited By ~ 3

Author(s):

Maria V. Lyange ◽

Mikhail V. Gorshenkov ◽

A.V. Bogach ◽

Makoto Ohtsuka ◽

Hiroyuki Miki ◽

...

Keyword(s):

Thin Films ◽

Transport Properties ◽

Field Dependence ◽

Heusler Alloys ◽

Amorphous State ◽

Structural Ordering ◽

Spin Disorder ◽

Induced Crystallization ◽

Deposited Films ◽

Disorder Scattering

We report on structural and transport properties of Ni-Mn-In thin films. The results obtained have indicated that transport properties of the thin films strongly depend on the structural ordering of the films. Specifically, annealing converts the semiconducting-like character of the resistivity into that typical for metals. This is due to annealing-induced crystallization of as-deposited films which are in partially amorphous state. In both the as-deposited and the annealed thin films the field dependence of the resistivity is negative, which is typical for thin films of Heusler alloys and can be ascribed to the suppression of the spin disorder scattering.

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