scholarly journals Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition

ACS Nano ◽  
2020 ◽  
Vol 14 (10) ◽  
pp. 12962-12971
Author(s):  
James Gigliotti ◽  
Xin Li ◽  
Suresh Sundaram ◽  
Dogukan Deniz ◽  
Vladimir Prudkovskiy ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Boron Nitride ◽  
Epitaxial Films ◽  
Epitaxial Deposition

The optical constants of zinc oxide epitaxial films grown on silicon with a buffer nanolayer of silicon carbide

2011 ◽  
Vol 78 (7) ◽  
pp. 440 ◽  
Author(s):  
S. A. Kukushkin ◽  
A. V. Osipov ◽  
E. V. Osipova ◽  
S. V. Razumov ◽  
A. V. Kandakov
Keyword(s):  
Silicon Carbide ◽  
Zinc Oxide ◽  
Optical Constants ◽  
Epitaxial Films

Characterization of silicon carbide epitaxial films by differential reflectance spectroscopy

2000 ◽  
Author(s):  
Anatoly V. Shturbin ◽  
Ilya E. Titkov ◽  
Vadim Y. Panevin ◽  
Leonid E. Vorobjev ◽  
Renata F. Witman
Keyword(s):  
Silicon Carbide ◽  
Reflectance Spectroscopy ◽  
Epitaxial Films

Deposition of Epitaxially Oriented Films of Cubic SiC on Silicon by Laser Ablation of Elemental Targets.

1994 ◽  
Vol 339 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
W. H. Weber ◽  
J. Hangas ◽  
B. D. Poindexter
Keyword(s):  
Silicon Carbide ◽  
Laser Ablation ◽  
Crystalline Silicon ◽  
Epitaxial Films ◽  
Ablation Plume ◽  
Silicon Substrates ◽  
Pure Silicon ◽  
Silicon Target ◽  
Oriented Films ◽  
Pure Carbon

ABSTRACTSilicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000 °C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the silicon substrate from the carbon in the ablation plume and from the silicon of the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 μm with part of the silicon being supplied by the ablation plume of the silicon target.

Computational studies on the interactions of glycine amino acid with graphene, h-BN and h-SiC monolayers

2017 ◽  
Vol 19 (3) ◽  
pp. 1896-1908 ◽  
Author(s):  
H. Tavassoli Larijani ◽  
M. Jahanshahi ◽  
M. Darvish Ganji ◽  
M. H. Kiani
Keyword(s):  
Density Functional Theory ◽  
Silicon Carbide ◽  
Amino Acid ◽  
Boron Nitride ◽  
Dft Calculations ◽  
Density Functional ◽  
Computational Studies ◽  
Functional Theory ◽  
Zwitterionic Form ◽  
Hexagonal Sheets

In the present work, the adsorption of glycine amino acid and its zwitterionic form onto three different hexagonal sheets, namely graphene, boron-nitride (h-BN) and silicon carbide (h-SiC), has been investigated within the framework of density functional theory (DFT) calculations.

Characterization of Boron Nitride Coated Silicon Carbide Fibers and Composites

1997 ◽  
Vol 3 (S2) ◽  
pp. 733-734
Author(s):  
Mani Gopal
Keyword(s):  
Silicon Carbide ◽  
Boron Nitride ◽  
High Temperatures ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Sic Fibers ◽  
Silicon Carbide Fibers ◽  
Pull Out ◽  
Sic Composites

Silicon carbide (SiC) composites are receiving much attention for structural use at high temperatures. One class of composites are those reinforced with SiC fibers. The SiC fibers are coated with boron nitride (BN) which is weakly bonded to the fiber. During fracture, the coating deflects cracks causing pull-out of the fibers (Fig. 1). This process of fiber pull-out consumes energy and increases the toughness of the composite. Although much work has been done on characterizing these materials by SEM, not much has been done using TEM due to difficulties in specimen preparation. The purpose of this study is to characterize these fibers and composites using conventional and analytical TEM.In this study, TEM specimens were prepared by dimpling and ion milling. Careful control of the preparation was needed to ensure the integrity of the SiC-BN interface. Figure 2a is a TEM image of the fiber showing delamination at the SiC-BN interface.

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