Characterization of silicon carbide epitaxial films by differential reflectance spectroscopy

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

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Mechanical characterization of silicon carbide filled hybrid composites

Materials Today Proceedings ◽

10.1016/j.matpr.2021.05.399 ◽

2021 ◽

Author(s):

D. Athith ◽

Praveen Kittali ◽

B. Yogesha

Keyword(s):

Silicon Carbide ◽

Mechanical Characterization ◽

Hybrid Composites

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Synthesis and characterization of carbon‐ silicon carbide particulate composites by powder metallurgical route

International Journal of Applied Ceramic Technology ◽

10.1111/ijac.13804 ◽

2021 ◽

Author(s):

L.M. Manocha ◽

Guddu Prasad ◽

S. Manocha

Keyword(s):

Silicon Carbide ◽

Particulate Composites ◽

Synthesis And Characterization ◽

Silicon Carbide Particulate

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Characterization of epitaxial films by grazing-incidence X-ray diffraction

Thin Solid Films ◽

10.1016/0040-6090(87)90349-x ◽

1987 ◽

Vol 154 (1-2) ◽

pp. 33-42 ◽

Cited By ~ 42

Author(s):

Armin Segmüller

Keyword(s):

Grazing Incidence ◽

Epitaxial Films ◽

X Ray Diffraction ◽

X Ray

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Preparation and characterization of diamond-silicon carbide-silicon composites by gaseous silicon vacuum infiltration process

Journal of Superhard Materials ◽

10.3103/s1063457614060069 ◽

2014 ◽

Vol 36 (6) ◽

pp. 410-414 ◽

Cited By ~ 1

Author(s):

R. J. Liu ◽

Y. B. Cao ◽

C. L. Yan ◽

C. R. Zhang ◽

P. B. He

Keyword(s):

Silicon Carbide ◽

Vacuum Infiltration ◽

Infiltration Process

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Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1415 ◽

2007 ◽

Vol 46 (4A) ◽

pp. 1415-1426 ◽

Cited By ~ 46

Author(s):

Shinsuke Miyajima ◽

Akira Yamada ◽

Makoto Konagai

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Low Temperatures ◽

Chemical Vapor ◽

Nanocrystalline Silicon ◽

Hot Wire ◽

Nanocrystalline Silicon Carbide ◽

P Type

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Preparation and characterization of epitaxial iron oxide films

Journal of Materials Research ◽

10.1557/jmr.1998.0281 ◽

1998 ◽

Vol 13 (7) ◽

pp. 2003-2014 ◽

Cited By ~ 42

Author(s):

Y. Gao ◽

Y. J. Kim ◽

S. A. Chambers

Keyword(s):

Growth Rate ◽

Iron Oxide ◽

Oxygen Plasma ◽

Film Surface ◽

Surface Region ◽

Growth Conditions ◽

Epitaxial Films ◽

Pure Phase ◽

Iron Oxide Films

Well-ordered, pure-phase epitaxial films of FeO, Fe3O4, and γ–Fe2O3 were prepared on MgO(001) by oxygen-plasma-assisted MBE. The stoichiometries of these thin films were controlled by varying the growth rate and oxygen partial pressure. Selective growth of γ–Fe2O3 and α–Fe2O3 was achieved by controlling the growth conditions in conjunction with the choice of appropriate substrates. Growth of the iron oxide epitaxial films on MgO at ≥350 °C is accompanied by significant Mg outdiffusion. The FeO(001) film surface exhibits a (2 × 2) reconstruction, which is accompanied by a significant amount of Fe3+ in the surface region. Fe3O4 (001) has been found to reconstruct to a structure. γ–Fe23 (001) film surface is unreconstructed.

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