Highly Efficient Electric-Field Control of Giant Rashba Spin–Orbit Coupling in Lattice-Matched InSb/CdTe Heterostructures

ACS Nano ◽  
2020 ◽  
Vol 14 (12) ◽  
pp. 17396-17404
Author(s):  
Yong Zhang ◽  
Fenghua Xue ◽  
Chenjia Tang ◽  
Jiaming Li ◽  
Liyang Liao ◽  
...  
Keyword(s):  
Electric Field ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Highly Efficient ◽  
Rashba Spin ◽  
Field Control ◽  
Lattice Matched

SPIN CURRENT INDUCED ELECTRIC FIELD IN A RASHBA QUANTUM WIRE

2010 ◽  
Vol 24 (07) ◽  
pp. 649-656
Author(s):  
XI FU ◽  
GUANGHUI ZHOU
Keyword(s):  
Electric Field ◽  
Current Density ◽  
Quantum Wire ◽  
Spin Current ◽  
Scattering Matrix ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin

We investigate theoretically the spin current and spin current induced electric field in a weak Rashba spin-orbit coupling quantum wire (QW) using a definition for spin current by means of scattering matrix. It is found that there exists two non-zero linear spin current density elements which have oscillation peaks at the center of QW and their strengths can be changed by the number of propagation modes and Rashba constant, respectively. Moreover, the spin current induced electric field has also been calculated and its strength is measurable with present technology with which can be used to detect spin current.

scholarly journals Controllable Valley Polarization Using Silicene Double Line Defects Due to Rashba Spin-Orbit Coupling

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Hongyu Tian ◽  
ChongDan Ren ◽  
Benhu Zhou ◽  
Shaoyin Zhang ◽  
Weitao Lu ◽  
...  
Keyword(s):  
Electric Field ◽  
Parallel Line ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Double Line ◽  
Transmission Coefficients ◽  
Rashba Spin ◽  
Valley Polarization ◽  
Line Defects

AbstractWe theoretically investigate the valley polarization in silicene with two parallel line defects due to Rashba spin-orbit coupling (RSOC). It is found that as long as RSOC exceeds the intrinsic spin-orbit coupling (SOC), the transmission coefficients of the two valleys oscillate with the same periodicity and intensity, which consists of wide transmission peaks and zero-transmission plateaus. However, in the presence of a perpendicular electric field, the oscillation periodicity of the first valley increases, whereas that of the second valley shortens, generating the corresponding wide peak-zero plateau regions, where perfect valley polarization can be achieved. Moreover, the valley polarizability can be changed from 1 to −1 by controlling the strength of the electric field. Our findings establish a different route for generating valley-polarized current by purely electrical means and open the door for interesting applications of semiconductor valleytronics.

Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures

2021 ◽  
pp. 2007862
Author(s):  
Chia‐Tse Tai ◽  
Po‐Yuan Chiu ◽  
Chia‐You Liu ◽  
Hsiang‐Shun Kao ◽  
C. Thomas Harris ◽  
...  
Keyword(s):  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Strain Effects ◽  
Rashba Spin

scholarly journals Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor

2021 ◽  
Vol 7 (5) ◽  
pp. eabe2892
Author(s):  
Dmitry Shcherbakov ◽  
Petr Stepanov ◽  
Shahriar Memaran ◽  
Yaxian Wang ◽  
Yan Xin ◽  
...  
Keyword(s):  
Electric Field ◽  
High Mobility ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Quantum Oscillations ◽  
Out Of Plane ◽  
Order Of Magnitude ◽  
Spin Degeneracy

Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic, and topological phenomena and applications. In bulk materials, SOC strength is a constant. Here, we demonstrate SOC and intrinsic spin splitting in atomically thin InSe, which can be modified over a broad range. From quantum oscillations, we establish that the SOC parameter α is thickness dependent; it can be continuously modulated by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Unexpectedly, α could be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.

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