Highly Sensitive, Gate-Tunable, Room-Temperature Mid-Infrared Photodetection Based on Graphene–Bi2Se3 Heterostructure

ACS Photonics ◽  
2017 ◽  
Vol 4 (3) ◽  
pp. 482-488 ◽  
Author(s):  
Jaeseok Kim ◽  
Sungjoon Park ◽  
Houk Jang ◽  
Nikesh Koirala ◽  
Jae-Bok Lee ◽  
...  
Nanoscale ◽  
2021 ◽  
Author(s):  
Vinh Ho ◽  
Yifei Wang ◽  
Michael Cooney ◽  
Nguyen Q Vinh

Ultrafast, high sensitive, low cost photodetectors operating at room temperature sensitive from the deep-ultraviolet to mid-infrared region remain a significant challenge in optoelectronics. Achievements in traditional semiconductors using cryogenic operation...


2018 ◽  
Vol 53 (18) ◽  
pp. 13010-13017 ◽  
Author(s):  
Jinchao Tong ◽  
Landobasa Y. M. Tobing ◽  
Li Qian ◽  
Fei Suo ◽  
Dao Hua Zhang

2020 ◽  
Vol 32 (52) ◽  
pp. 2004412
Author(s):  
Longhui Zeng ◽  
Di Wu ◽  
Jiansheng Jie ◽  
Xiaoyan Ren ◽  
Xin Hu ◽  
...  

2018 ◽  
Vol 21 (7) ◽  
pp. 462-467
Author(s):  
Babak Sadeghi

Aim and Objective: Ultrafine Ag/ZnO nanotetrapods (AZNTP) have been prepared successfully using silver (I)–bis (oxalato) zinc complex and 1, 3-diaminopropane (DAP) with a phase separation system, and have been injected into a diethyl/water solution. Materials and Methods: This crystal structure and lattice constant of the AZNTP obtained were investigated by means of a SEM, XRD, TEM and UV-vis spectrum. Results: The results of the present study demonstrated the growth and characterization AZNTP for humidity sensing and DAP plays a key role in the determination of particle morphology. AZNTP films with 23 nm in arm diameter have shown highly sensitive, quick response sensor material that works at room temperature.


Sensors ◽  
2019 ◽  
Vol 19 (18) ◽  
pp. 3815
Author(s):  
Renyun Zhang ◽  
Magnus Hummelgård ◽  
Joel Ljunggren ◽  
Håkan Olin

Metal-semiconductor junctions and interfaces have been studied for many years due to their importance in applications such as semiconductor electronics and solar cells. However, semiconductor-metal networks are less studied because there is a lack of effective methods to fabricate such structures. Here, we report a novel Au–ZnO-based metal-semiconductor (M-S)n network in which ZnO nanowires were grown horizontally on gold particles and extended to reach the neighboring particles, forming an (M-S)n network. The (M-S)n network was further used as a gas sensor for sensing ethanol and acetone gases. The results show that the (M-S)n network is sensitive to ethanol (28.1 ppm) and acetone (22.3 ppm) gases and has the capacity to recognize the two gases based on differences in the saturation time. This study provides a method for producing a new type of metal-semiconductor network structure and demonstrates its application in gas sensing.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saurabh Dixit ◽  
Nihar Ranjan Sahoo ◽  
Abhishek Mall ◽  
Anshuman Kumar

AbstractMid-infrared (IR) spectral region is of immense importance for astronomy, medical diagnosis, security and imaging due to the existence of the vibrational modes of many important molecules in this spectral range. Therefore, there is a particular interest in miniaturization and integration of IR optical components. To this end, 2D van der Waals (vdW) crystals have shown great potential owing to their ease of integration with other optoelectronic platforms and room temperature operation. Recently, 2D vdW crystals of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2 \hbox {O}_5$$ V 2 O 5 have been shown to possess the unique phenomenon of natural in-plane biaxial hyperbolicity in the mid-infrared frequency regime at room temperature. Here, we report a unique application of this in-plane hyperbolicity for designing highly efficient, lithography free and extremely subwavelength mid-IR photonic devices for polarization engineering. In particular, we show the possibility of a significant reduction in the device footprint while maintaining an enormous extinction ratio from $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 based mid-IR polarizers. Furthermore, we investigate the application of sub-wavelength thin films of these vdW crystals towards engineering the polarization state of incident mid-IR light via precise control of polarization rotation, ellipticity and relative phase. We explain our results using natural in-plane hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 via both analytical and full-wave electromagnetic simulations. This work provides a lithography free alternative for miniaturized mid-infrared photonic devices using the hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 .


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