AbstractWe investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence originating from silicon-vacancy defects. For a diode exposed to an electron dose of $$1 \times 10^{18}\,{{\mathrm{cm}}}^{-2}$$
1
×
10
18
cm
-
2
at $$800\,{{\mathrm{keV}}}$$
800
keV
, the electroluminescence intensity of these defects is most prominent within a wavelength range of 400–$$1100\,{{\mathrm{nm}}}$$
1100
nm
. The commonly observed $${{\mathrm{D}}}_1$$
D
1
emission was sufficiently suppressed in the electroluminescence spectra of all the fabricated diodes, while it was detected in the photoluminescence measurements. The photoluminescence spectra also displayed emission lines from silicon-vacancy defects.
Efficient Generation of an Array of Single Silicon-Vacancy Defects in Silicon Carbide
