In situ growth of epitaxial yttrium aluminum oxide (YAlO3) thin films by metalorganic chemical vapor deposition

1993 ◽  
Vol 5 (1) ◽  
pp. 14-16 ◽  
Author(s):  
Bin Han ◽  
Deborah A. Neumayer ◽  
Douglas L. Schulz ◽  
Bruce J. Hinds ◽  
Tobin J. Marks ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
In Situ Growth ◽  
Yttrium Aluminum Oxide ◽  
Yttrium Aluminum ◽  
Metalorganic Chemical

In Situ Growth Monitoring During Metalorganic Chemical Vapor Deposition of YBa 2Cu 3Ox Thin Films by Spectroscopic Ellipsometry

1999 ◽  
Vol 38 (Part 2, No. 6A/B) ◽  
pp. L632-L635 ◽  
Author(s):  
Shuu'ichirou Yamamoto ◽  
Satoshi Sugai ◽  
Yasunari Matsukawa ◽  
Akio Sengoku ◽  
Hiroshi Tobisaka ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Spectroscopic Ellipsometry ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Monitoring ◽  
In Situ Growth ◽  
Metalorganic Chemical

In Situ Heteroepitaxial Bi2Sr2CaCu2O8 Thin Films Prepared by Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 335 ◽  
Author(s):  
Frank Dimeo ◽  
Bruce W. Wessels ◽  
Deborah A. Neumayer ◽  
Tobin J. Marks ◽  
Jon L. Schindler ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Phase ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Metalorganic Chemical

AbstractBi2Sr2CaCu2O8 thin films have been prepared in situ by low pressure metalorganic chemical vapor deposition using fluorinated β–diketonate precursors. The influence of the growth conditions on the oxide phase stability and impurity phase formation was examined as well as the superconducting properties of the films. Thin films deposited on LaAIO3 substrates were epitaxial as confirmed by x-ray diffraction measurements, including θ-2θ and φ scans. Four probe resistivity measurements showed the films to be superconducting with a maximum Tc0 of 90 K without post annealing. This Tc0 is among the highest reported for thin films of the BSCCO (2212) phase, and approaches reported bulk values.

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