Application of a Quantum Cascade Laser for Time-Resolved, in Situ Probing of CH4/H2and C2H2/H2Gas Mixtures during Microwave Plasma Enhanced Chemical Vapor Deposition of Diamond

2006 ◽  
Vol 110 (8) ◽  
pp. 2821-2828 ◽  
Author(s):  
A. Cheesman ◽  
J. A. Smith ◽  
M. N. R. Ashfold ◽  
N. Langford ◽  
S. Wright ◽  
...  
2002 ◽  
Vol 11 (1) ◽  
pp. 59-66 ◽  
Author(s):  
Yun Sung Woo ◽  
Duk Young Jeon ◽  
In Taek Han ◽  
Nae Sung Lee ◽  
Jae Eun Jung ◽  
...  

Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.


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