Influence of Relative Humidity during Film Formation Processes on the Structure of Ultrathin Polymeric Films

Langmuir ◽  
1998 ◽  
Vol 14 (23) ◽  
pp. 6743-6748 ◽  
Author(s):  
U. Hecht ◽  
C. M. Schilz ◽  
M. Stratmann
1992 ◽  
Vol 280 ◽  
Author(s):  
S. L. Hsia ◽  
T. Y. Tana ◽  
P. L. Smith ◽  
G. E. Mcguire

ABSTRACTThe mechanism of formation of epitaxial CoSi2 film on (001) Si substrate, produced using sequentially deposited Ti-Co bimetallic layer source materials for which Ti was deposited onto the Si substrates first, has been studied by observing the Co silicide formation processes and structures in samples prepared by isochronal annealing and by isothermal annealing. The results demonstrated that, in leading to epitaxial CoSi2 film formation, Ti has played two roles. It has served as a barrier material to Co atoms and thus preventing Co2Si from forming. More importantly, it has allowed nucleation and growth of epitaxial-CoSi2 to dominate the Co silicide film formation process, apparently because it has served as a cleanser to remove native oxide from the Si substrate surface.


1986 ◽  
Vol 1 (4) ◽  
pp. 577-582
Author(s):  
M.W. Ferralli ◽  
M. Luntz

Implanted, polymeric films have been produced by accelerator-ion-beam irradiation of metallic substrates immersed in hydrocarbon gases. Typical substrates include silver, aluminum, and steel; hydrocarbon gases include 1,3 butadiene and ethylene at 6.6 Pa pressure; ion beams employed include singly ionized H, He, and Ar at 30 keV. Experimental procedures and corrosion-resistance properties of the films are reviewed (each discussed elsewhere). A theory of the film-formation process is presented. It is concluded that the films form as the result of a two-stage process: glow-discharge adhesion and polymerization followed by radiation-induced implantation resulting from collisional recoil and substrate sputtering.


1990 ◽  
Vol 192 ◽  
Author(s):  
C. C. Tsai ◽  
G.B. Anderson ◽  
R. Anderson

ABSTRACTThis paper examines near-equilibrium and non-equilibrium film formation processes in the plasma deposition of Si and their effects on network propagation, defect generation and interface quality based on the concept of film formation as a balance between deposition and ‘etching.’ Using non-F reactant gases and conventional PECVD, epitaxial Si growth was achieved at 250°C. By adjusting the extent of ‘etching’, one can selectively obtain amorphous, microcrystalline, polycrystalline, and epitaxial Si using similar process gases and reactors.


RSC Advances ◽  
2017 ◽  
Vol 7 (68) ◽  
pp. 42718-42724 ◽  
Author(s):  
Zhantao Wang ◽  
Fuxi Shi ◽  
Cunlu Zhao

The role of relative humidity (RH) on the wetting behavior of droplets of two [Rmim][NTf2] ionic liquids (ILs) on a mica surface was investigated and water vapor adsorption was found to enhance the ILs precursor film formation and droplet spreading.


2007 ◽  
Vol 1056 ◽  
Author(s):  
Juntao Wu ◽  
Minhua Zhao ◽  
Tinh Nguyen ◽  
Xiaohong Gu

ABSTRACTThe morphological structures of polystyrene-block-poly(ethylene oxide), PS-b-PEO, have been investigated under humidity controlled environments during film formation. Well-defined cylindrical microdomains oriented normal to the surface were induced by the high humidity during spin coating. Effects of the relative humidity (RH) on such ordered structures have also been studied. The results show that, the orientation and the ordering of the copolymer structures are very sensitive to the humidity of the environment during the film formation. Such ordered structure is stable at a variety of the RHs, and the phase contrast between the cylindrical PEO domains and the PS matrix domains can be significantly enhanced by the elevated RH. After the incorporation of the nanoparticles, however, the morphological structures of the PS-b-PEO are modified.


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