Repeated Growth–Etching–Regrowth for Large-Area Defect-Free Single-Crystal Graphene by Chemical Vapor Deposition

ACS Nano ◽  
2014 ◽  
Vol 8 (12) ◽  
pp. 12806-12813 ◽  
Author(s):  
Teng Ma ◽  
Wencai Ren ◽  
Zhibo Liu ◽  
Le Huang ◽  
Lai-Peng Ma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area

Cooperative Island Growth of Large-Area Single-Crystal Graphene on Copper Using Chemical Vapor Deposition

ACS Nano ◽  
2014 ◽  
Vol 8 (6) ◽  
pp. 5657-5669 ◽  
Author(s):  
Gyula Eres ◽  
Murari Regmi ◽  
Christopher M. Rouleau ◽  
Jihua Chen ◽  
Ilia N. Ivanov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Island Growth

scholarly journals Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga2O3 Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1031 ◽  
Author(s):  
Chunyang Jia ◽  
Dae-Woo Jeon ◽  
Jianlong Xu ◽  
Xiaoyan Yi ◽  
Ji-Hyeon Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Large Area ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Transmission Test

In this work, we have achieved synthesizing large-area high-density β-Ga2O3 nanowires on c-plane sapphire substrate by metal–organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of the nanowires with lengths exceeding 6 μm and diameters ranging from ~50 to ~200 nm. The β-Ga2O3 nanowires consist of a single-crystal monoclinic structure, which exhibits strong ( 2 ¯ 01) orientation, confirmed by transmission electronic microscopy and X-ray diffraction analysis. The PL spectrum obtained from these β-Ga2O3 nanowires exhibits strong emissions centered at ~360 and ~410 nm, respectively. The energy band gap of the β-Ga2O3 nanowires is estimated to be ~4.7 eV based on an optical transmission test. A possible mechanism for the growth of β-Ga2O3 nanowires is also presented.

Large Area Single-Crystal Diamond Synthesis by 915 MHz Microwave Plasma-Assisted Chemical Vapor Deposition

2014 ◽  
Vol 14 (7) ◽  
pp. 3234-3238 ◽  
Author(s):  
Qi Liang ◽  
Chih-shiue Yan ◽  
Joseph Lai ◽  
Yu-fei Meng ◽  
Szczesny Krasnicki ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Diamond Synthesis ◽  
Large Area ◽  
Single Crystal Diamond ◽  
Single Crystal Diamond Synthesis

scholarly journals Structural and electronic switching of a single crystal 2D metal-organic framework prepared by chemical vapor deposition

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
F. James Claire ◽  
Marina A. Solomos ◽  
Jungkil Kim ◽  
Gaoqiang Wang ◽  
Maxime A. Siegler ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Metal Organic Framework ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Large Area ◽  
High Quality ◽  
Metal Organic ◽  
Organic Framework

Abstract The incorporation of metal-organic frameworks into advanced devices remains a desirable goal, but progress is hindered by difficulties in preparing large crystalline metal-organic framework films with suitable electronic performance. We demonstrate the direct growth of large-area, high quality, and phase pure single metal-organic framework crystals through chemical vapor deposition of a dimolybdenum paddlewheel precursor, Mo2(INA)4. These exceptionally uniform, high quality crystals cover areas up to 8600 µm2 and can be grown down to thicknesses of 30 nm. Moreover, scanning tunneling microscopy indicates that the Mo2(INA)4 clusters assemble into a two-dimensional, single-layer framework. Devices are readily fabricated from single vapor-phase grown crystals and exhibit reversible 8-fold changes in conductivity upon illumination at modest powers. Moreover, we identify vapor-induced single crystal transitions that are reversible and responsible for 30-fold changes in conductivity of the metal-organic framework as monitored by in situ device measurements. Gas-phase methods, including chemical vapor deposition, show broader promise for the preparation of high-quality molecular frameworks, and may enable their integration into devices, including detectors and actuators.

scholarly journals Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3112
Author(s):  
Ruinan Wu ◽  
Yueguo Hu ◽  
Peisen Li ◽  
Junping Peng ◽  
Jiafei Hu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
Sharp Interface ◽  
Large Area ◽  
Oriented Growth ◽  
High Quality ◽  
Pressure Chemical

The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/ferromagnetic epitaxial interfaces are mainly limited by the single-crystal size of the Ni (111) substrate and well-oriented graphene domains. In this work, based on the preparation of a 2-inch single-crystal Ni (111) film on an Al2O3 (0001) wafer, we successfully achieve the production of a full-coverage, high-quality graphene monolayer on a Ni (111) substrate with an atomically sharp interface via ambient pressure chemical vapor deposition (APCVD). The high crystallinity and strong coupling of the well-oriented epitaxial graphene/Ni (111) interface are systematically investigated and carefully demonstrated. Through the analysis of the growth model, it is shown that the oriented growth induced by the Ni (111) crystal, the optimized graphene nucleation and the subsurface carbon density jointly contribute to the resulting high-quality graphene/Ni (111) heterostructure. Our work provides a convenient approach for the controllable fabrication of a large-area homogeneous graphene/ferromagnetic interface, which would benefit interface engineering of graphene-based MTJs and future chip-level 2D spintronic applications.

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth

Point‐Arc Remote Plasma Chemical Vapor Deposition for High‐Quality Single‐Crystal Diamond Selective Growth

2019 ◽  
Vol 216 (21) ◽  
pp. 1900227
Author(s):  
Wenxi Fei ◽  
Masafumi Inaba ◽  
Haruka Hoshino ◽  
Ikuto Tsuyusaki ◽  
Sora Kawai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Growth ◽  
Plasma Chemical ◽  
High Quality ◽  
Plasma Chemical Vapor Deposition ◽  
High Quality Single Crystal ◽  
Single Crystal Diamond

CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7198-7204 ◽  
Author(s):  
Michael E. Ramón ◽  
Aparna Gupta ◽  
Chris Corbet ◽  
Domingo A. Ferrer ◽  
Hema C. P. Movva ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Large Area ◽  
Cobalt Thin Films ◽  
Cmos Compatible
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