Formation mechanism of preferential c-axis oriented ZnO thin films grown on p-Si substrates

2004 ◽  
Vol 39 (10) ◽  
pp. 3525-3528 ◽  
Author(s):  
H. S. Lee ◽  
J. Y. Lee ◽  
T. W. Kim ◽  
D. W. Kim ◽  
W. J. Cho
Keyword(s):  
Thin Films ◽  
Formation Mechanism ◽  
Zno Thin Films ◽  
Si Substrates

Atomic Arrangement and Formation Mechanism of c-Axis Oriented ZnO Thin Films Grown on p-Si Substrates

2007 ◽  
Vol 124-126 ◽  
pp. 93-96
Author(s):  
N.K. Park ◽  
H.S. Lee ◽  
Y.S. No ◽  
Tae Whan Kim ◽  
Jeong Yong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Pole Figure ◽  
Formation Mechanism ◽  
Zno Thin Films ◽  
Zno Films ◽  
Crystallographic Axis ◽  
Axis Orientation ◽  
Atomic Arrangement ◽  
Si Substrates ◽  
Selected Area Electron Diffraction

The X-ray diffraction (XRD) pattern for the ZnO films grown on Si (100) substrates indicates that the grown ZnO films have a strong c-axis orientation. The pole figure indicates that ZnO thin films have columnars with the grains of the [0002] crystallographic axis perpendicular to the Si (100) substrate, indicative of the random rotational orientations along the c-axis. Selected area electron diffraction pattern (SADP) of the ZnO/Si (100) heterostructures shows that the ZnO preferential oriented film is formed on the Si substrate. A possible atomic arrangement of the crystal structure and the formation mechanism of the c-axis orientated ZnO thin films grown on p-Si substrates are discussed on the basis of the XRD, the pole figure, and SADP results.

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Characteristics of ZnO thin films deposited onto Al/Si substrates by r.f. magnetron sputtering

1997 ◽  
Vol 302 (1-2) ◽  
pp. 116-121 ◽  
Author(s):  
Ki Hyun Yoon ◽  
Ji-Won Choi ◽  
Dong-Heon Lee
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Zno Thin Films ◽  
Si Substrates

Characterization of low resistivity Ga-doped ZnO thin films on Si substrates prepared by pulsed laser deposition

2019 ◽  
Vol 6 (10) ◽  
pp. 106421
Author(s):  
Guankong Mo ◽  
Jiahui Liu ◽  
Guotao Lin ◽  
Zhuoliang Zou ◽  
Zeqi Wei ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Low Resistivity ◽  
Si Substrates ◽  
Doped Zno

p-Type Formation Mechanism of Codoped and Tridoped ZnO Thin Films

2013 ◽  
Vol 5 (5) ◽  
pp. 462-468 ◽  
Author(s):  
L. Balakrishnan ◽  
S. R. Barman ◽  
N. Gopalakrishnan
Keyword(s):  
Thin Films ◽  
Formation Mechanism ◽  
Zno Thin Films

Electrical Properties of ZnO Thin Films Deposited by Pulsed Laser Deposition.

2004 ◽  
Vol 829 ◽  
Author(s):  
S. P. Heluani ◽  
G. Simonelli ◽  
M. Villafuerte ◽  
G. Juarez ◽  
A. Tirpak ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Axis Orientation ◽  
Si Substrates ◽  
N2 Atmosphere ◽  
Doping Effects ◽  
High O2

ABSTRACTStructural and electronic transport properties of polycrystalline ZnO thin films, prepared by pulsed laser deposition, have been investigated. The films were deposited on glass and Si3N4/Si substrates using O2 and N2 atmospheres. X-ray analysis revealed preferential c-axis orientation perpendicular to the sample substrate. Films deposited under relatively high O2 pressure were highly resistive. However, the conductivity σ increased while the films were irradiated with ultraviolet light, showing an Arrhenius (In σ ∝ T-1) dependence as a function of temperature. The ZnO film deposited in N2 atmosphere exhibited at room temperature a resistivity ∼ 1 Ω cm, and a sheet carrier concentration ∼ 5 1012 cm-2. The variation of the conductivity with temperature, in the range 60 – 150 K, follows a In σ ∝ T-1/4 dependence characteristic of variable range hopping. An analysis of the experimental results of conductivity as a function of temperature, in terms of possible doping effects, as well as conduction mechanisms is presented.

Admittance and Photoadmittance Spectroscopy of Zinc Oxide Layers Grown on p-Si Substrates by Spin Coating Method

2013 ◽  
Vol 200 ◽  
pp. 27-32
Author(s):  
Pawel Popielarski ◽  
Waclaw Bala ◽  
Kazimierz Paprocki
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Dielectric Response ◽  
Ac Conductivity ◽  
Signal Amplitude ◽  
Zno Thin Films ◽  
Si Substrates ◽  
Universal Power Law ◽  
Coating Method ◽  
Different Temperatures

In this work, the dielectric response of ZnO thin films has been studied over a temperature range of 200 K - 550 K. The dielectric response of polycrystalline ZnO thin films in the frequency domain was measured from 42 Hz - to 5 MHz with a small AC signal amplitude at different temperatures. Influence of the light on conductivity has been also investigated. A universal power law relation was brought into picture to explain the frequency dependence of AC conductivity. The temperature dependence of AC conductivity was analyzed in detail. The activation energy obtained from the temperature dependence of AC conductivity was attributed to the shallow trap-controlled space charge conduction in the bulk of the sample.

Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

2012 ◽  
Vol 626 ◽  
pp. 168-172
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Rf Power ◽  
Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

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