Atomic Arrangement and Formation Mechanism of c-Axis Oriented ZnO Thin Films Grown on p-Si Substrates

The X-ray diffraction (XRD) pattern for the ZnO films grown on Si (100) substrates indicates that the grown ZnO films have a strong c-axis orientation. The pole figure indicates that ZnO thin films have columnars with the grains of the [0002] crystallographic axis perpendicular to the Si (100) substrate, indicative of the random rotational orientations along the c-axis. Selected area electron diffraction pattern (SADP) of the ZnO/Si (100) heterostructures shows that the ZnO preferential oriented film is formed on the Si substrate. A possible atomic arrangement of the crystal structure and the formation mechanism of the c-axis orientated ZnO thin films grown on p-Si substrates are discussed on the basis of the XRD, the pole figure, and SADP results.

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Formation mechanism of preferential c-axis oriented ZnO thin films grown on p-Si substrates

Journal of Materials Science ◽

10.1023/b:jmsc.0000026968.24617.f6 ◽

2004 ◽

Vol 39 (10) ◽

pp. 3525-3528 ◽

Cited By ~ 13

Author(s):

H. S. Lee ◽

J. Y. Lee ◽

T. W. Kim ◽

D. W. Kim ◽

W. J. Cho

Keyword(s):

Thin Films ◽

Formation Mechanism ◽

Zno Thin Films ◽

Si Substrates

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Atomic arrangement variations of [0001]-tilt grain boundaries in ZnO thin films grown on p-Si substrates due to thermal treatment

Applied Physics Letters ◽

10.1063/1.2732177 ◽

2007 ◽

Vol 90 (18) ◽

pp. 181907 ◽

Cited By ~ 4

Author(s):

J. W. Shin ◽

J. Y. Lee ◽

Y. S. No ◽

J. H. Jung ◽

T. W. Kim ◽

...

Keyword(s):

Thin Films ◽

Thermal Treatment ◽

Grain Boundaries ◽

Zno Thin Films ◽

Atomic Arrangement ◽

Si Substrates

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Atomic arrangement variations of 30° in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing

Journal of Materials Research ◽

10.1557/jmr.2009.0233 ◽

2009 ◽

Vol 24 (6) ◽

pp. 2006-2010 ◽

Cited By ~ 1

Author(s):

J.W. Shin ◽

J.Y. Lee ◽

Y.S. No ◽

T.W. Kim ◽

W.K. Choi

Keyword(s):

Thin Films ◽

Transition Zone ◽

Thermal Annealing ◽

Misfit Strain ◽

Zno Thin Films ◽

Plane Rotation ◽

Atomic Arrangement ◽

Si Substrates ◽

Domain Boundaries ◽

Rotation Domain

High-resolution transmission electron microscopy (HRTEM) images of annealed ZnO thin films showed the domain boundaries of a (0) plane with a transition zone and a (1) plane without a transition zone. The 30° in-plane rotation domain boundaries were formed in the ZnO thin films because the angle of the c-axis was tilted 3.5° in comparison with that of neighboring 30° in-plane rotation domains to reduce the misfit strain energy. The atomic arrangement variations of 30° in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing are described.

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Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.881-883.1117 ◽

2014 ◽

Vol 881-883 ◽

pp. 1117-1121 ◽

Cited By ~ 1

Author(s):

Xiang Min Zhao

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Rf Magnetron Sputtering ◽

Buffer Layers ◽

Zno Thin Films ◽

Zno Films ◽

Si Substrates ◽

Atomic Force ◽

Structure Morphology ◽

Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

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Characteristics of ZnO thin films deposited onto Al/Si substrates by r.f. magnetron sputtering

Thin Solid Films ◽

10.1016/s0040-6090(96)09568-5 ◽

1997 ◽

Vol 302 (1-2) ◽

pp. 116-121 ◽

Cited By ~ 71

Author(s):

Ki Hyun Yoon ◽

Ji-Won Choi ◽

Dong-Heon Lee

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Zno Thin Films ◽

Si Substrates

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Characterization of low resistivity Ga-doped ZnO thin films on Si substrates prepared by pulsed laser deposition

Materials Research Express ◽

10.1088/2053-1591/ab3a6c ◽

2019 ◽

Vol 6 (10) ◽

pp. 106421

Author(s):

Guankong Mo ◽

Jiahui Liu ◽

Guotao Lin ◽

Zhuoliang Zou ◽

Zeqi Wei ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Low Resistivity ◽

Si Substrates ◽

Doped Zno

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p-Type Formation Mechanism of Codoped and Tridoped ZnO Thin Films

Science of Advanced Materials ◽

10.1166/sam.2013.1476 ◽

2013 ◽

Vol 5 (5) ◽

pp. 462-468 ◽

Cited By ~ 1

Author(s):

L. Balakrishnan ◽

S. R. Barman ◽

N. Gopalakrishnan

Keyword(s):

Thin Films ◽

Formation Mechanism ◽

Zno Thin Films

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Electrical Properties of ZnO Thin Films Deposited by Pulsed Laser Deposition.

MRS Proceedings ◽

10.1557/proc-829-b2.25 ◽

2004 ◽

Vol 829 ◽

Author(s):

S. P. Heluani ◽

G. Simonelli ◽

M. Villafuerte ◽

G. Juarez ◽

A. Tirpak ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

Axis Orientation ◽

Si Substrates ◽

N2 Atmosphere ◽

Doping Effects ◽

High O2

ABSTRACTStructural and electronic transport properties of polycrystalline ZnO thin films, prepared by pulsed laser deposition, have been investigated. The films were deposited on glass and Si3N4/Si substrates using O2 and N2 atmospheres. X-ray analysis revealed preferential c-axis orientation perpendicular to the sample substrate. Films deposited under relatively high O2 pressure were highly resistive. However, the conductivity σ increased while the films were irradiated with ultraviolet light, showing an Arrhenius (In σ ∝ T-1) dependence as a function of temperature. The ZnO film deposited in N2 atmosphere exhibited at room temperature a resistivity ∼ 1 Ω cm, and a sheet carrier concentration ∼ 5 1012 cm-2. The variation of the conductivity with temperature, in the range 60 – 150 K, follows a In σ ∝ T-1/4 dependence characteristic of variable range hopping. An analysis of the experimental results of conductivity as a function of temperature, in terms of possible doping effects, as well as conduction mechanisms is presented.

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