scholarly journals Giant anomalous Hall effect from spin-chirality scattering in a chiral magnet

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yukako Fujishiro ◽  
Naoya Kanazawa ◽  
Ryosuke Kurihara ◽  
Hiroaki Ishizuka ◽  
Tomohiro Hori ◽  
...  

AbstractThe electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been intensively studied towards energy efficient electronics, those related to electron scattering have received limited attention. Here we report the observation of giant AHE of electron-scattering origin in a chiral magnet MnGe thin film. The Hall conductivity and Hall angle, respectively, reach $$40,000$$ 40 , 000  Ω−1 cm−1 and $$18$$ 18 % in the ferromagnetic region, exceeding the conventional limits of AHE of intrinsic and extrinsic origins, respectively. A possible origin of the large AHE is attributed to a new type of skew-scattering via thermally excited spin-clusters with scalar spin chirality, which is corroborated by the temperature–magnetic-field profile of the AHE being sensitive to the film-thickness or magneto-crystalline anisotropy. Our results may open up a new platform to explore giant AHE responses in various systems, including frustrated magnets and thin-film heterostructures.

2015 ◽  
Vol 1120-1121 ◽  
pp. 424-428
Author(s):  
C.Y. Zou ◽  
Lai Sen Wang ◽  
Xiang Liu ◽  
Q.F. Zhang ◽  
Jun Bao Wang ◽  
...  

In this paper, we studied the dependence of temperature and weak localization (WL) effect on the anomalous Hall effect (AHE) in strong disordered and poorly crystallized metal Co thin film deposited by high-pressure magnetron sputtering. The temperature coefficients of resistivity is positive at high temperatures and becomes negative at low temperatures, which is the typical characteristic of weak localization effect in dirty metal regime due to the strong disorder. The saturation anomalous Hall resistivity (ρAxy) have no scaling relation between ρxy and ρxx in weak localization region with temperature below 50 K. In metal region, temperature ranged from 50 K to 300 K, the relation between ρAxy and ρxxis ρAxy=A+bρ2xx, which indicates that the AHE in this Co thin film is scattering-independence at high temperature. The results also shows that the WL effect have a significant impact on the AHE of the Co thin film at low temperature.


Nanoscale ◽  
2018 ◽  
Vol 10 (21) ◽  
pp. 10041-10049 ◽  
Author(s):  
Shanna Zhu ◽  
Dechao Meng ◽  
Genhao Liang ◽  
Gang Shi ◽  
Peng Zhao ◽  
...  

A high-quality Bi2Se3/LaCoO3 heterostructure is fabricated as a new TI/FMI system for investigating a proximity-induced ferromagnetic phase in topological insulators.


Author(s):  
Takuya Matsuda ◽  
Natsuki Kanda ◽  
Tomoya Higo ◽  
N. P. Armitage ◽  
Satoru Nakatsuji ◽  
...  

2012 ◽  
Vol 21 (10) ◽  
pp. 107201 ◽  
Author(s):  
Hong-Liang Bai ◽  
Shu-Min He ◽  
Tong-Shuai Xu ◽  
Guo-Lei Liu ◽  
Shi-Shen Yan ◽  
...  

2017 ◽  
Vol 29 (41) ◽  
pp. 415802 ◽  
Author(s):  
Qiang Zhang ◽  
Yan Wen ◽  
Yuelei Zhao ◽  
Peng Li ◽  
Xin He ◽  
...  

2019 ◽  
Author(s):  
Mukesh Kumar Dasoundhi ◽  
Rudra Prasad Jena ◽  
Devendra Kumar ◽  
Archana Lakhani

2019 ◽  
Vol 61 (9) ◽  
pp. 1622-1626
Author(s):  
V. V. Glushkov ◽  
M. A. Anisimov ◽  
A. V. Bogach ◽  
A. D. Bozhko ◽  
S. V. Demishev ◽  
...  

2019 ◽  
Vol 478 ◽  
pp. 187-191 ◽  
Author(s):  
Runrun Hao ◽  
Jian Su ◽  
Qikun Huang ◽  
Tie Zhou ◽  
Jianwang Cai ◽  
...  

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