scholarly journals Unusual solute segregation phenomenon in coherent twin boundaries

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Cong He ◽  
Zhiqiao Li ◽  
Houwen Chen ◽  
Nick Wilson ◽  
Jian-Feng Nie

AbstractInterface segregation of solute atoms has a profound effect on properties of engineering alloys. The occurrence of solute segregation in coherent twin boundaries (CTBs) in Mg alloys is commonly considered to be induced by atomic size effect where solute atoms larger than Mg take extension sites and those smaller ones take compression sites in CTBs. Here we report an unusual solute segregation phenomenon in a group of Mg alloys—solute atoms larger than Mg unexpectedly segregate to compression sites of {10$$\overline 1$$ 1 ¯ 1} fully coherent twin boundary and do not segregate to the extension or compression site of {10$$\overline 1$$ 1 ¯ 2} fully coherent twin boundary. We propose that such segregation is dominated by chemical bonding (coordination and solute electronic configuration) rather than elastic strain minimization. We further demonstrate that the chemical bonding factor can also predict the solute segregation phenomena reported previously. Our findings advance the atomic-level understanding of the role of electronic structure in solute segregation in fully coherent twin boundaries, and more broadly grain boundaries, in Mg alloys. They are likely to provide insights into interface boundaries in other metals and alloys of different structures.

1983 ◽  
Vol 23 ◽  
Author(s):  
Jun-ichi Chikawa ◽  
Fumio Sato ◽  
Tadasu Sunada

ABSTRACTAtomic processes at the interface in regrowth following laser induced melting were investigated by observing behavior of impurity segregation. The interfacial segregation coefficient k* was obtained from depth profiles of solute atoms redistributed by laser irradiation of uniformly doped Si, Ge, and GayAl1−yAs crystals. It was found that k*=k0 for B in Si, Ga in Ge ih the growth rate range of 1 m/s. It is concluded that rapid growth freezes a state of liquid monolayer adjacent to the interface which has the character of ideal solution from dilute to eutectic composition for dopant-silicon systems and in the entire range of composition for the mixed crystal.


2018 ◽  
Vol 55 (1) ◽  
pp. 21-25 ◽  
Author(s):  
N.V. Skiba

Abstract Stress-driven grain boundary (GB) migration in ultrafine-grained materials with nanotwinned structure is theoretically described. In the framework of the theoretical model, the stress-driven high-angle GB migration is accompanied by migration of twin boundaries which adjoin this GB. Energetic characteristics and critical stresses of the GB migration accompanied by the twin boundary migration are calculated.


1993 ◽  
Vol 319 ◽  
Author(s):  
Jenn-Yue Wang ◽  
A. H. King

AbstractVarious morphologies are observed where twins meet grain boundaries in YBa2Cu3O7−δ. Twins may be “correlated” at the boundary (i.e. twin boundaries from one grain may meet a twin boundary from the other grain in a quadruple junction) and the twins may be narrowed or “constricted” at the boundary. These effects are determined by the interfacial energy. We estimate the energy of the various interfaces by determining the dislocation arrays they contain, using the constrained coincidence site lattice (CCSL) model and Bollmann's O2-lattice formalism. Our approach indicates that there are significant changes in the energy of the interfaces and is thus able to explain the variety of observed morphologies.


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