scholarly journals Voltage controlled Néel vector rotation in zero magnetic field

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Ather Mahmood ◽  
Will Echtenkamp ◽  
Mike Street ◽  
Jun-Lei Wang ◽  
Shi Cao ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Zero Magnetic Field ◽  
Electric Transport ◽  
Device Structures ◽  
Voltage Dependent ◽  
Zero Values ◽  
Vector Rotation ◽  
Cmos Compatible ◽  
Vector Orientation ◽  
Memory Applications

AbstractMulti-functional thin films of boron (B) doped Cr2O3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr2O3 film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse photoemission, electric transport and scanning probe microscopy measurements reveal B-dependent TN and resistivity enhancement, spin-canting, anisotropy reduction, dynamic polarization hysteresis and gate voltage dependent orientation of boundary magnetization. The combined effect enables H = 0, voltage controlled, nonvolatile Néel vector rotation at high-temperature. Theoretical modeling estimates switching speeds of about 100 ps making B:Cr2O3 a promising multifunctional single-phase material for energy efficient nonvolatile CMOS compatible memory applications.

scholarly journals Voltage controlled Néel vector rotation in zero magnetic field at CMOS-compatible temperatures

2020 ◽  
Author(s):  
Ather Mahmood ◽  
Will Echtenkamp ◽  
Mike Street ◽  
Jun-Lei Wang ◽  
Shi Cao ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Zero Magnetic Field ◽  
Electric Transport ◽  
Force Microscopy ◽  
Device Structures ◽  
Vector Rotation ◽  
Cmos Compatible ◽  
Piezo Force Microscopy ◽  
Vector Orientation ◽  
Memory Applications

Abstract Multi-functional thin films of boron (B) doped Cr2O3 exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. Boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B: Cr2O3 film. Switching of the Hall voltage between zero and negative values implies Néel vector rotation by 90-degree. Magnetometry, spin resolved inverse photoemission, electric transport measurements and piezo force microscopy reveal B-dependent TN and resistivity enhancement, spin-canting, anisotropy reduction and dynamic polarization hysteresis. Their combined effect enables H=0, voltage controlled, nonvolatile Néel vector rotation at high-temperature. Theoretical modeling estimates switching speeds of about 100ps making B: Cr2O3 a promising multifunctional single-phase material for energy efficient nonvolatile CMOS compatible memory applications.

scholarly journals Experimental signatures of nodeless multiband superconductivity in a $$\hbox {2H-Pd}_{0.08} \hbox {TaSe}_2$$ single crystal

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Chanhee Kim ◽  
Dilip Bhoi ◽  
Yeahan Sur ◽  
Byung-Gu Jeon ◽  
Dirk Wulferding ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
Zero Magnetic Field ◽  
Anisotropy Ratio ◽  
Strong Temperature Dependence ◽  
Critical Fields ◽  
Band Theory ◽  
Plane Field ◽  
Low Field ◽  
Out Of Plane

AbstractIn order to understand the superconducting gap nature of a $$\hbox {2H-Pd}_{0.08} \hbox {TaSe}_2$$ 2H-Pd 0.08 TaSe 2 single crystal with $$T_{c} = 3.13 \text { K}$$ T c = 3.13 K , in-plane thermal conductivity $$\kappa $$ κ , in-plane London penetration depth $$\lambda _{\text {L}}$$ λ L , and the upper critical fields $$H_{c2}$$ H c 2 have been investigated. At zero magnetic field, it is found that no residual linear term $$\kappa _{0}/T$$ κ 0 / T exists and $$\lambda _{\text {L}}$$ λ L follows a power-law $$T^n$$ T n (T: temperature) with n = 2.66 at $$T \le \frac{1}{3}T_c$$ T ≤ 1 3 T c , supporting nodeless superconductivity. Moreover, the magnetic-field dependence of $$\kappa _{0}$$ κ 0 /T clearly shows a shoulder-like feature at a low field region. The temperature dependent $$H_{c2}$$ H c 2 curves for both in-plane and out-of-plane field directions exhibit clear upward curvatures near $$T_c$$ T c , consistent with the shape predicted by the two-band theory and the anisotropy ratio between the $$H_{c2}$$ H c 2 (T) curves exhibits strong temperature-dependence. All these results coherently suggest that $$\hbox {2H-Pd}_{0.08} \hbox {TaSe}_2$$ 2H-Pd 0.08 TaSe 2 is a nodeless, multiband superconductor.

scholarly journals Imaging the formation and surface phase separation of the CE phase

2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Haibiao Zhou ◽  
Qiyuan Feng ◽  
Yubin Hou ◽  
Masao Nakamura ◽  
Yoshinori Tokura ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Phase Transitions ◽  
Charge Ordering ◽  
Zero Magnetic Field ◽  
Ferromagnetic Phase ◽  
Emergent Properties ◽  
Orbital Ordering ◽  
Strong Electron ◽  
Antiferromagnetic Correlation ◽  
Ordering Transitions

AbstractThe CE phase is an extraordinary phase exhibiting the simultaneous spin, charge, and orbital ordering due to strong electron correlation. It is an ideal platform to investigate the role of the multiple orderings in the phase transitions and discover emergent properties. Here, we use a cryogenic high-field magnetic force microscope to image the phase transitions and properties of the CE phase in a Pr0.5Ca0.5MnO3 thin film. In a high magnetic field, we observed a clear suppression of magnetic susceptibility at the charge-ordering insulator transition temperature (TCOI), whereas, at the Néel temperature (TN), no significant change is observed. This observation favors the scenario of strong antiferromagnetic correlation developed below TCOI but raises questions about the Zener polaron paramagnetic phase picture. Besides, we discoverd a phase-separated surface state in the CE phase regime. Ferromagnetic phase domains residing at the surface already exist in zero magnetic field and show ultra-high magnetic anisotropy. Our results provide microscopic insights into the unconventional spin- and charge-ordering transitions and revealed essential attributes of the CE phase, highlighting unusual behaviors when multiple electronic orderings are involved.

scholarly journals Colossal anomalous Nernst effect in a correlated noncentrosymmetric kagome ferromagnet

2021 ◽  
Vol 7 (13) ◽  
pp. eabf1467
Author(s):  
T. Asaba ◽  
V. Ivanov ◽  
S. M. Thomas ◽  
S. Y. Savrasov ◽  
J. D. Thompson ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electronic Structure ◽  
Theoretical Calculations ◽  
Zero Magnetic Field ◽  
Nernst Effect ◽  
Nodal Lines ◽  
Transverse Response ◽  
Narrow Bands ◽  
Strong Spin ◽  
Anomalous Nernst Effect

The transverse voltage generated by a temperature gradient in a perpendicularly applied magnetic field, termed the Nernst effect, has promise for thermoelectric applications and for probing electronic structure. In magnetic materials, an anomalous Nernst effect (ANE) is possible in a zero magnetic field. We report a colossal ANE in the ferromagnetic metal UCo0.8Ru0.2Al, reaching 23 microvolts per kelvin. Uranium’s 5f electrons provide strong electronic correlations that lead to narrow bands, a known route to producing a large thermoelectric response. In addition, uranium’s strong spin-orbit coupling produces an intrinsic transverse response in this material due to the Berry curvature associated with the relativistic electronic structure. Theoretical calculations show that in UCo0.8Ru0.2Al at least 148 Weyl nodes, and two nodal lines, exist within 60 millielectron volt of the Fermi level. This work demonstrates that magnetic actinide materials can host strong Nernst and Hall responses due to their combined correlated and topological nature.

scholarly journals TRANSPORT PROPERTIES OF 2D ELECTRON GAS IN AN n-InGaAs/GaAs DQW IN A VICINITY OF LOW MAGNETIC-FIELD-INDUCED HALL INSULATOR–QUANTUM HALL LIQUID TRANSITION

2007 ◽  
Vol 06 (03n04) ◽  
pp. 173-177
Author(s):  
YU. G. ARAPOV ◽  
S. V. GUDINA ◽  
G. I. HARUS ◽  
V. N. NEVEROV ◽  
N. G. SHELUSHININA ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electron Gas ◽  
Quantum Hall ◽  
Zero Magnetic Field ◽  
Double Quantum ◽  
Ballistic Regime ◽  
2D Electron Gas ◽  
Double Quantum Well ◽  
Liquid Transition ◽  
Low Magnetic Field

The resistivity (ρ) of low mobility dilute 2D electron gas in an n- InGaAs / GaAs double quantum well (DQW) exhibits the monotonic "insulating-like" temperature dependence (dρ/dT < 0) at T = 1.8–70 K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kBTτ/ħ > 0.1–3.5) for our samples, and the electron density is on an "insulating" side of the so-called B = 0 2D metal–insulator transition. We show that the observed features of localization and Landau quantization in a vicinity of the low magnetic-field-induced insulator–quantum Hall liquid transition is due to the σxy(T) anomalous T-dependence.

Calculation of the hydrogen dimer spectrum in zero magnetic field

1981 ◽  
Vol 54 (2) ◽  
pp. 189-200 ◽  
Author(s):  
J. Verberne ◽  
J. Reuss
Keyword(s):  
Magnetic Field ◽  
Zero Magnetic Field

scholarly journals Fractional Quantum Hall States at Zero Magnetic Field

2011 ◽  
Vol 106 (23) ◽  
Author(s):  
Titus Neupert ◽  
Luiz Santos ◽  
Claudio Chamon ◽  
Christopher Mudry
Keyword(s):  
Magnetic Field ◽  
Quantum Hall ◽  
Zero Magnetic Field ◽  
Fractional Quantum ◽  
Fractional Quantum Hall ◽  
Quantum Hall States ◽  
Hall States
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