scholarly journals Non-fullerene acceptor organic photovoltaics with intrinsic operational lifetimes over 30 years

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yongxi Li ◽  
Xiaheng Huang ◽  
Kan Ding ◽  
Hafiz K. M. Sheriff ◽  
Long Ye ◽  
...  
Keyword(s):  
High Efficiency ◽  
Bulk Heterojunction ◽  
Low Cost ◽  
Accelerated Aging ◽  
Outdoor Exposure ◽  
Buffer Layers ◽  
Organic Photovoltaic ◽  
Light Illumination ◽  
Energy Technology ◽  
Operational Lifetime

AbstractOrganic photovoltaic cells (OPVs) have the potential of becoming a productive renewable energy technology if the requirements of low cost, high efficiency and prolonged lifetime are simultaneously fulfilled. So far, the remaining unfulfilled promise of this technology is its inadequate operational lifetime. Here, we demonstrate that the instability of NFA solar cells arises primarily from chemical changes at organic/inorganic interfaces bounding the bulk heterojunction active region. Encapsulated devices stabilized by additional protective buffer layers as well as the integration of a simple solution processed ultraviolet filtering layer, maintain 94% of their initial efficiency under simulated, 1 sun intensity, AM1.5 G irradiation for 1900 hours at 55 °C. Accelerated aging is also induced by exposure of light illumination intensities up to 27 suns, and operation temperatures as high as 65 °C. An extrapolated intrinsic lifetime of > 5.6 × 104 h is obtained, which is equivalent to 30 years outdoor exposure.

scholarly journals Solution-Processed CdTe Thin-Film Solar Cells Using ZnSe Nanocrystal as a Buffer Layer

2018 ◽  
Vol 8 (7) ◽  
pp. 1195 ◽  
Author(s):  
Yanru Chen ◽  
Xianglin Mei ◽  
Xiaolin Liu ◽  
Bin Wu ◽  
Junfeng Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
High Efficiency ◽  
Low Cost ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Solution Processed ◽  
Cdte Nanocrystal ◽  
First Time

The CdTe nanocrystal (NC) is an outstanding, low-cost photovoltaic material for highly efficient solution-processed thin-film solar cells. Currently, most CdTe NC thin-film solar cells are based on CdSe, ZnO, or CdS buffer layers. In this study, a wide bandgap and Cd-free ZnSe NC is introduced for the first time as the buffer layer for all solution-processed CdTe/ZnSe NC hetero-junction thin-film solar cells with a configuration of ITO/ZnO/ZnSe/CdTe/MoOx/Au. The dependence of the thickness of the ZnSe NC film, the annealing temperature and the chemical treatment on the performance of NC solar cells are investigated and discussed in detail. We further develop a ligand-exchanging strategy that involves 1,2-ethanedithiol (EDT) during the fabrication of ZnSe NC film. An improved power conversion efficiency (PCE) of 3.58% is obtained, which is increased by 16.6% when compared to a device without the EDT treatment. We believe that using ZnSe NC as the buffer layer holds the potential for developing high-efficiency, low cost, and stable CdTe NC-based solar cells.

scholarly journals High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge Buffer Layer

2016 ◽  
Vol 2016 ◽  
pp. 1-5 ◽  
Author(s):  
Wei-Cheng Kuo ◽  
Hung-Chi Hsieh ◽  
Wu Chih-Hung ◽  
Huang Wen-Hsiang ◽  
Chien-Chieh Lee ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Efficiency ◽  
Electron Cyclotron Resonance ◽  
Low Cost ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
High Quality ◽  
Tandem Solar Cells ◽  
Hydrogen Flow ◽  
Transmission Electron

We present high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers. The thin Ge buffer layers were modulated by hydrogen flow rate from 60 to 90 sccm to improve crystal quality by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at low growth temperature (180°C). The GaAs and Ge epilayers quality was verified by X-ray diffraction (XRD) and spectroscopy ellipsometry (SE). The full width at half maximum (FWHM) of the Ge and GaAs epilayers in XRD is 406 arcsec and 220 arcsec, respectively. In addition, the GaAs/Ge/Si interface is observed by transmission electron microscopy (TEM) to demonstrate the epitaxial growth. The defects at GaAs/Ge interface are localized within a few nanometers. It is clearly showed that the dislocation is well suppressed. The quality of the Ge buffer layer is the key of III–V/Si tandem cell. Therefore, the high quality GaAs epilayers that grow on virtual substrate with 100 nm Ge buffer layers is suitable to develop the low cost and high efficiency III–V/Si tandem solar cells.

The Essence and Efficiency Limits of Bulk-Heterostructure Organic Solar Cells

2012 ◽  
Vol 1390 ◽  
Author(s):  
M. Alam ◽  
B. Ray ◽  
M. Khan ◽  
S. Dongaonkar
Keyword(s):  
Organic Solar Cells ◽  
Carrier Transport ◽  
High Efficiency ◽  
Bulk Heterojunction ◽  
Low Cost ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Substantial Improvement ◽  
Open Circuit ◽  
Future Improvement

Abstract:Since its introduction in early 1990s, bulk-heterojunction organic photovoltaic solar cell (BHJ-OPV) has promised high-efficiency at ultra-low cost and weight, with potential for non-traditional applications such as building-integrated PV. There is a widespread presumption, however, that the complexity of morphology makes carrier transport in OPV irreducibly complicated, and possibly, beyond predictive modeling. In this paper, we use elementary and intuitive arguments to derive the fundamental thermodynamic as well as morphology-specific practical limits of BHJ-OPV efficiency. We find that constraints of the percolation threshold and trade-off among short-circuit current, open circuit voltage, and fill factor make substantial improvement in OPV efficiency difficult. We posit that future improvement in OPV will rely not on morphology engineering, or reducing the polymer bandgap, but on increasing both the effective μ × τ product and the cross-gap between donor/acceptors. Even if the OPV fails to achieve the highest efficiency anticipated by the thermodynamic limit, its novel form factor, lightweight, and transparency can make it a commercially viable option for many applications.

scholarly journals Development and Testing of a Modular Sunlight Transport System Employing Free-Form Mirrors

Energies ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 406
Author(s):  
Allen Jong-Woei Whang ◽  
Yi-Yung Chen ◽  
Min-Yih Leu ◽  
Wei-Chieh Tseng ◽  
Yu-Zheng Lin ◽  
...  
Keyword(s):  
High Efficiency ◽  
Polynomial Regression ◽  
Low Cost ◽  
Free Form ◽  
Optical Simulation ◽  
Light Illumination ◽  
Natural Light ◽  
Lighting System ◽  
Natural Lighting ◽  
Illumination System

The energy consumption of artificial lighting and its impacts on health have stimulated research into natural lighting systems. However, natural lighting system designs are mainly custom, making them costly and difficult to replicate. This study took an office space as a testing field in order to develop a highly adaptable and adjustable modular natural light illumination system. We divided the system into multiple module designs, demonstrated the use of simple development and fabrication processes and integrated a freeform reflector into the system. In creating a freeform mirror, the optical simulation results of the tested field were regressed (through polynomial regression) to achieve a uniformly illuminated plane, and a high-efficiency light-emitting system was produced. Finally, an active heliostat was used to collect sunlight, combined with actual manufacturing verification and measurement results, in order to create an excellent indoor lighting system. As a result, we presented a low-cost and easy-to-design natural light illumination system for the assisted lighting of office areas.

scholarly journals Indium-Doped Zinc Oxide Thin Films as Effective Anodes of Organic Photovoltaic Devices

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Ziyang Hu ◽  
Baochen Jiao ◽  
Jianjun Zhang ◽  
Xiaodan Zhang ◽  
Ying Zhao
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Bulk Heterojunction ◽  
Low Cost ◽  
Short Circuit ◽  
Acid Methyl Ester ◽  
Ultrasonic Spray Pyrolysis ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Organic Photovoltaic

Indium-doped zinc oxide (IZO) thin films were prepared by low-cost ultrasonic spray pyrolysis (USP). Both a low resistivity (3.13×10−3 Ω cm) and an average direct transmittance (400∼1500 nm) about 80% of the IZO films were achieved. The IZO films were investigated as anodes in bulk-heterojunction organic photovoltaic (OPV) devices based on poly(3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester. The device fabricated on IZO film-coated glass substrate showed an open circuit voltage of 0.56 V, a short circuit current of 8.49 mA cm-2, a fill factor of 0.40, and a power conversion efficiency of 1.91%, demonstrating that the IZO films prepared by USP technique are promising low In content and transparent electrode candidates of low-cost OPV devices.

Hierarchical Modulation of PEDOT:PSS Buffer Layers for High Efficiency Organic Photovoltaic Devices

2010 ◽  
Vol 13 (12) ◽  
pp. H447 ◽  
Author(s):  
Kyung Min Kim ◽  
Keun Woo Lee ◽  
Abderrafia Moujoud ◽  
Sang Hoon Oh ◽  
Hyun Jae Kim
Keyword(s):  
High Efficiency ◽  
Buffer Layers ◽  
Organic Photovoltaic ◽  
Photovoltaic Devices ◽  
Organic Photovoltaic Devices ◽  
Hierarchical Modulation

scholarly journals A novel random terpolymer for high-efficiency bulk-heterojunction polymer solar cells

RSC Advances ◽  
2017 ◽  
Vol 7 (4) ◽  
pp. 1975-1980 ◽  
Author(s):  
Su-Mi Bang ◽  
Sungkyoung Kang ◽  
You-Sun Lee ◽  
Bogyu Lim ◽  
Hyojung Heo ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Bulk Heterojunction ◽  
Polymer Solar Cells ◽  
Organic Photovoltaic ◽  
Donor Material

A new random terpolymer, coded LGC-D013, based on TPD as the acceptor and BDT and terthiophene as the donor units, has been synthesized and characterized for donor material in bulk-heterojunction (BHJ) organic photovoltaic (OPV) application.

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

Improvement of Ti/RuO2–IrO2 Anode Lifetime and Electrocatalytical Properties by Using an Eco-Friendly Thermal Decomposition Method Using Polyvinyl Alcohol as Solvent

2019 ◽  
Author(s):  
Charlys Bezerra ◽  
Géssica Santos ◽  
Marilia Pupo ◽  
Maria Gomes ◽  
Ronaldo Silva ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Polyvinyl Alcohol ◽  
High Efficiency ◽  
Electrochemical Impedance ◽  
Pechini Method ◽  
Low Cost ◽  
Charge Transfer Resistance ◽  
Transfer Resistance ◽  
Calcination Temperatures ◽  
Service Lifetime

<p>Electrochemical oxidation processes are promising solutions for wastewater treatment due to their high efficiency, easy control and versatility. Mixed metal oxides (MMO) anodes are particularly attractive due to their low cost and specific catalytic properties. Here, we propose an innovative thermal decomposition methodology using <a>polyvinyl alcohol (PVA)</a> as a solvent to prepare Ti/RuO<sub>2</sub>–IrO<sub>2</sub> anodes. Comparative anodes were prepared by conventional method employing a polymeric precursor solvent (Pechini method). The calcination temperatures studied were 300, 400 and 500 °C. The physical characterisation of all materials was performed by X-ray diffraction and scanning electron microscopy coupled with energy dispersive spectroscopy, while electrochemical characterisation was done by cyclic voltammetry, accelerated service lifetime and electrochemical impedance spectroscopy. Both RuO<sub>2</sub> and IrO<sub>2</sub> have rutile-type structures for all anodes. Rougher and more compact surfaces are formed for the anodes prepared using PVA. Amongst temperatures studied, 300 °C using PVA as solvent is the most suitable one to produce anodes with expressive increase in voltammetric charge (250%) and accelerated service lifetime (4.3 times longer) besides reducing charge-transfer resistance (8 times lower). Moreover, the electrocatalytic activity of the anodes synthesised with PVA toward the Reactive Blue 21 dye removal in chloride medium (100 % in 30 min) is higher than that prepared by Pechini method (60 min). Additionally, the removal total organic carbon point out improved mineralisation potential of PVA anodes. Finally, this study reports a novel methodology using PVA as solvent to synthesise Ti/RuO<sub>2</sub>–IrO<sub>2</sub> anodes with improved properties that can be further extended to synthesise other MMO compositions.</p>

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