scholarly journals Information can be stored in the human skin memristor which has non-volatile memory

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Oliver Pabst ◽  
Ørjan G. Martinsen ◽  
Leon Chua

AbstractMuch is already understood about the anatomical and physiological mechanisms behind the linear, electrical properties of biological tissues. Studying the non-linear electrical properties, however, opens up for the influence from other processes that are driven by the electric field or movement of charges. An electrical measurement that is affected by the applied electrical stimulus is non-linear and reveals the non-linear electrical properties of the underlying (biological) tissue; if it is done with an alternating current (AC) stimulus, the corresponding voltage current plot may exhibit a pinched hysteresis loop which is the fingerprint of a memristor. It has been shown that human skin and other biological tissues are memristors. Here we performed non-linear electrical measurements on human skin with applied direct current (DC) voltage pulses. By doing so, we found that human skin exhibits non-volatile memory and that analogue information can actually be stored inside the skin at least for three minutes. As demonstrated before, human skin actually contains two different memristor types, one that originates from the sweat ducts and one that is based on thermal changes of the surrounding tissue, the stratum corneum; and information storage is possible in both. Finally, assuming that different physiological conditions of the skin can explain the variations in current responses that we observed among the subjects, it follows that non-linear recordings with DC pulses may find use in sensor applications.

2018 ◽  
Vol 9 (1) ◽  
pp. 184-192 ◽  
Author(s):  
Oliver Pabst

Abstract It has been demonstrated before that human skin can be modeled as a memristor (memory resistor). Here we realize a memristor bridge by applying two voltages of opposite signs at two different skin sites. By this setup it is possible to use human skin as a frequency doubler and half-wave rectifier which is an application of the non-linear electrical properties of human skin. The corresponding electrical measurements are non-linear since these are affected by the applied stimulus itself.


2019 ◽  
Vol 19 (12) ◽  
pp. 1374-1378 ◽  
Author(s):  
A. Chaudhary ◽  
R.K. Shukla ◽  
P. Malik ◽  
R. Mehra ◽  
K.K. Raina

2021 ◽  
Vol 12 (1) ◽  
pp. 73-81
Author(s):  
Oliver Pabst ◽  
Øystein Magnus Sørebø ◽  
Karoline Sjøen Andersen ◽  
Erlend Lemva Ousdal ◽  
Sean William Bråthen ◽  
...  

Abstract Human skin has been classified as a non-volatile memristor and it is shown that information can be stored within for at least three minutes. Here we investigate whether it is possible to store information up to 20 minutes. Furthermore, we investigate whether the information can be based on four different states, not just two (binary). We stored the information into the skin of the forehead of the test subjects under three different electrodes, which allows in principle for 64 different combinations (3 electrodes, 4 states) and one can think of numbers on the base of four. For this experiment, we decided on the numbers 1234 and 3024 (that correspond to numbers 27 and 50 in the decimal system). Writing of the different states was done by the application of DC voltage pulses that cause electro-osmosis in the sweat ducts (nonlinear electrical measurements). Based on our results, we were not able to distinguish between four different states. However, we can show that binary information storage in human skin is possible for up to 20 minutes.


1996 ◽  
Vol 433 ◽  
Author(s):  
Kazushi Amanuma ◽  
Takemitsu Kunio ◽  
Joe Cuchiaro

AbstractSrBi2Ta2O9(SBT) capacitors were integrated to the structure for a mega-bit nonvolatile memory, and their electrical properties after metallization were investigated. Annealing above 500°C after contact-etching was necessary to obtain good electrical properties. A well saturated hysteresis loop with 2Pr of more than 15μC/cm2 was obtained for the 0.7×0.7μm capacitor. The read-out polarization was very stable in 105 sec after the write-pulse. No fatigue or imprint was observed up to 1011 cycles. These results show suitability of SBT capacitors for a mega-bit non-volatile memory.


Author(s):  
Markus P. Nemitz ◽  
Christoffer K. Abrahamsson ◽  
Lukas Wille ◽  
Adam. A. Stokes ◽  
Daniel J. Preston ◽  
...  

Nanoscale ◽  
2019 ◽  
Vol 11 (15) ◽  
pp. 7102-7110 ◽  
Author(s):  
Guanglong Ding ◽  
Kelin Zeng ◽  
Kui Zhou ◽  
Zongxiao Li ◽  
Ye Zhou ◽  
...  

A multi-state information storage state could be achievedviaa configurable SET process with non-volatile devices based on Ti3C2nanosheets.


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