scholarly journals Pulse Reshaping in Double-zero-index Photonic Crystals with Dirac-like-cone Dispersion

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Tao Xu ◽  
Dejun Zhu ◽  
Zhi Hong Hang

Abstract Triply-degenerate Dirac-like cone at the Brillouin zone center attracts much research interest in recent years. Whether the linear dispersion in such a Dirac-like cone reflects the same physics to Dirac cones at the Brillouin zone boundaries is still under investigation. In this manuscript, through microwave experiments and numerical simulations, we observe intriguing pulse reshaping phenomena in double-zero-index photonic crystals, which cannot be fully understood from their close-to-zero effective parameters. A reshaped pulse, with frequency components close to the Dirac frequency filtered, is propagating at a constant group velocity while part of these filtered frequencies appears at a much later time. In time domain measurements, we find a way to separate the effect between the linear dispersion and the extra flat band in Dirac-like cone to have a better understanding of the underneath physics. We succeed in obtaining the group velocity inside a double-zero-index photonic crystal and good consistence can be found between experiments, numerical simulations and band diagram calculations.

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1436
Author(s):  
Arian Nowbahari ◽  
Avisek Roy ◽  
Muhammad Nadeem Akram ◽  
Luca Marchetti

In this paper, we investigate the accuracy of the approximated analytical model currently utilized, by many researchers, to describe the depletion region width in planar junctionless transistors (PJLT). The proposed analysis was supported by numerical simulations performed in COMSOL Multiphysics software. By comparing the numerical results and the approximated analytical model of the depletion region width, we calculated that the model introduces a maximum RMS error equal to 90 % of the donor concentration in the substrate. The maximum error is achieved when the gate voltage approaches the threshold voltage ( V t h ) or when it approaches the flat band voltage ( V F B ) of the transistor. From these results, we concluded that this model cannot be used to determine accurately the flat-band and the threshold voltage of the transistor, although it represents a straightforward method to estimate the depletion region width in PJLT. By using the approximated analytical model, we extracted an analytical formula, which describes the electron concentration at the ideal boundary of the depletion region. This formula approximates the numerical data extracted from COMSOL with a relative error lower than 1 % . The proposed formula is in our opinion, as useful as the formula of the approximated analytical model because it allows for estimating the position of the depletion region also when the drain and source terminals are not grounded. We concluded that the analytical formula proposed at the end of this work could be useful to determine the position of the depletion region boundary in numerical simulations and in graphical representations provided by COMSOL Multiphysics software.


2006 ◽  
Vol 15 (01) ◽  
pp. 55-76
Author(s):  
S. WABNITZ

Optical devices employing photonic crystals and novel nanostructure materials may exhibit useful properties for applications to all-optical signal processing. In this work we analyze as a first example four-wave mixing of polarized beams in photonic crystal fibers. We show that by properly tuning the pump wavelength and the linear dispersion properties of the fiber one may obtain broadband parametric amplification and frequency conversion. Next we consider the in-line periodic amplification of short optical pulses by means of quantum-dot semiconductor optical amplifiers. We show by numerical simulations that pattern-free amplification of a 40 Gbit/s soliton signal at 1300 nm is possible without any inter-symbol interference or nonlinear pulse distortion caused by the fast gain dynamics.


Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1742
Author(s):  
Israa Abood ◽  
Sayed Elshahat ◽  
Zhengbiao Ouyang

Slow light with adequate low group velocity and wide bandwidth with a flat band of the zero-dispersion area were investigated. High buffering capabilities were obtained in a silicon-polymer coupled-slot slab photonic crystal waveguide (SP-CS-SPCW) with infiltrating slots by ionic liquid. A figure of merit (FoM) around 0.663 with the lowest physical bit length Lbit of 4.6748 µm for each stored bit in the optical communication waveband was gained by appropriately modifying the square air slot length. Posteriorly, by filling the slots with ionic liquid, the Lbit was enhanced to be 4.2817 μm with the highest FoM of 0.72402 in wider transmission bandwidth and ultra-high bit rate in terabit range, which may become useful for the future 6G mobile communication network. Ionic liquids have had a noticeable effect in altering the optical properties of photonic crystals. A polymer was used for the future incorporation of an electro-optic effect in buffers to realize the dynamic controlling of optical properties. Ionic liquids enhanced the transmission rate through optical materials. Additionally, the delay time in the ns-range was achieved, providing longer delay and ultra-low group velocity, which is important for light-matter interaction in light amplifiers and nonlinear devices.


2007 ◽  
Vol 31 ◽  
pp. 242-245 ◽  
Author(s):  
Mahi R. Singh

We have study the phenomenon on of phase transition in photonic band gap (PBG) materials doped with four-level nanoparticles in the presence of the dipole-dipole interaction. Numerical simulations for the real susceptibility have been performed for an isotropic PBG material. It is found that the real susceptibility has a singularity for a certain value of the nanostructure concentration. This is a signature of the phase transition in the system.


2006 ◽  
Vol 31 (22) ◽  
pp. 3321 ◽  
Author(s):  
Solomon M. Saltiel ◽  
Yuri S. Kivshar

2007 ◽  
Vol 310 (2) ◽  
pp. 2699-2701 ◽  
Author(s):  
M.D. Huang ◽  
Y.H. Lu ◽  
P.J. Kim ◽  
S.Y. Park ◽  
Y.P. Lee ◽  
...  

2003 ◽  
Vol 308 (2-3) ◽  
pp. 116-119 ◽  
Author(s):  
Xue-Hua Wang ◽  
Ben-Yuan Gu ◽  
Rong-Zhou Wang

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