scholarly journals Understanding the structural, optical, and dielectric characteristics of SrLaLiTe1−xMnxO6 perovskites

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Z. M. Halizan ◽  
Z. Mohamed ◽  
A. K. Yahya
Keyword(s):  
Optoelectronic Device ◽  
Solid State Reaction Method ◽  
Dielectric Study ◽  
Energy Storage Devices ◽  
Capacitive Energy Storage ◽  
Dielectric Characteristics ◽  
Storage Devices ◽  
Space Symmetry ◽  
Absorption Frequencies ◽  
Optoelectronic Device Application

AbstractIn electronic applications, good dielectric permittivity material has huge potential in the capacitive energy storage devices. Herein, in the present work the dielectric study of SrLaLiTe1−xMnxO6 (x = 0.02, 0.04, 0.06, 0.08, and 0.10) double perovskites has been studied and discussed. These compounds were prepared through solid-state reaction method. All of the prepared compounds were confirmed to crystallized in monoclinic structure of P21/n space symmetry with better crystallization when dopant concentrations increased until x = 0.08. The formation of Li–O–Te/Mn bonds in octahedral structures in all compounds were confirmed in this study. The existence of peaks at specific wavenumbers indicated vibrations of B–site cations’ bonds. When dopant amounts were increased from x = 0.02 to x = 0.08, there was an increasing trend of grains sizes formation in the compounds. The discussions on effects of grain sizes towards dielectric properties were included in this paper. Other important results and discussions comprised of the significant effects of dopant on the optical band gap (Eopt) and absorption frequencies of the compounds. The decreasing trend of Eopt towards semiconductor range indicated the compounds’ promising potentials for optoelectronic device application.

scholarly journals Preparation, Structural Analysis, and Tunability of Optical and Dielectric Characteristics of Mn–modified SrLaLiTeO6 Double Perovskite

2021 ◽  
Author(s):  
MUHAMMAD ZHARFAN MOHD HALIZAN ◽  
ZAKIAH MOHAMED ◽  
AHMAD KAMAL HAYATI YAHYA
Keyword(s):  
Dopant Concentration ◽  
Electrochemical Impedance ◽  
Double Perovskite ◽  
Optoelectronic Device ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
Dielectric Characteristics ◽  
Increasing Trend ◽  
Absorption Frequencies ◽  
Optoelectronic Device Application

Abstract SrLaLiTe 1- x Mn x O 6 ( x = 0.02, 0.04, 0.06, 0.08, 0.10) double perovskites have been prepared using solid state method. Studies on structural by applying X–ray diffraction (XRD) characterization found that all compounds formed in monoclinic, P2 1 /n symmetry with reduction of lattice parameters and unit cell volume as dopant concentration increased. The formation of Te 6+ /Mn 6+ –O–Li + octahedral structure can be confirmed with the presence of peaks at certain wavenumbers indicating vibrations of Te – O or Mn – O bonds. As dopant concentration increased, field emission scanning electron microscope (FESEM) characterization found that the increasing trend of formation in grains sizes from x = 0.02 to x = 0.08, and its effects towards dielectric properties which were conducted by electrochemical impedance spectroscopy (EIS) studies were discussed in this paper. Other discussions included were regarding the significant effect of dopant towards optical band gap, E opt and absorption frequencies of prepared compounds compared to pristine compound indicating its promising potential for optoelectronic device application.

scholarly journals Tailoring the supercapacitive performances of noble metal oxides, porous carbons and their composites

2013 ◽  
Vol 78 (12) ◽  
pp. 2141-2164 ◽  
Author(s):  
Vladimir Panic ◽  
Aleksandar Dekanski ◽  
Branislav Nikolic
Keyword(s):  
Energy Storage ◽  
Metal Oxides ◽  
Noble Metal ◽  
Electrochemical Impedance ◽  
Depth Profiling ◽  
Thin Layers ◽  
Energy Storage Devices ◽  
Capacitive Energy Storage ◽  
Storage Devices ◽  
Noble Metal Oxides

Porous electrochemical supercapacitive materials, as an important type of new-generation energy storage devices, require a detailed analysis and knowledge of their capacitive performances upon different charging/discharging regimes. The investigation of the responses to dynamic perturbations of typical representatives, noble metal oxides, carbonaceous materials and RuO2-impregnated carbon blacks, by electrochemical impedance spectroscopy (EIS) is presented. This presentation follows a brief description of supercapacitive behavior and origin of pseudocapacitive response of noble metal oxides. For all investigated materials, the electrical charging/discharging equivalent of the EIS response was found to obey the transmission line model envisaged as so-called ?resistor/capacitor (RC) ladder?. The ladder features are correlated to material physicochemical properties, its composition and the composition of the electrolyte. Fitting of the EIS data of different supercapacitive materials to appropriate RC ladders enables the in-depth profiling of the capacitance and pore resistance of their porous thin-layers and finally the complete revelation of capacitive energy storage issues.

Design Considerations and Ring-down Characteristics of Micromachined, High Current Density Capacitors

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 001380-001406
Author(s):  
Aubrey N. Beal ◽  
John Tatarchuk ◽  
Colin Stevens ◽  
Thomas Baginski ◽  
Michael Hamilton ◽  
...  
Keyword(s):  
Energy Storage ◽  
Surface Area ◽  
High Density ◽  
Energy Storage Devices ◽  
Capacitive Energy Storage ◽  
Passive Components ◽  
Storage Devices ◽  
Passive Devices ◽  
High K ◽  
High K Materials

The need for integrated passive components which meet the stringent power system requirements imposed by increased data rates, signal path density and challenging power distribution network topologies in integrated systems yield diverse motivations for high density, miniaturized capacitors capable of quickly sourcing large quantities of current. These diverse motivations have led to the realization of high density capacitor structures through the means of several technologies. These structures have been evaluated as high-speed, energy storage devices and their respective fabrication technologies have been closely compared for matching integrated circuit speed and density increase, chip current requirements, low resistance, low leakage current, high capacitance and compatibility with relatively high frequencies of operation (~1GHz). These technologies include devices that utilize pn junctions, Schottky barriers, optimized surface area techniques and the utilization of high dielectric constant (high-K) materials, such as hafnium oxide, as a dielectric layer through the means of atomic layer deposition (ALD). The resulting devices were micro-machined, large surface area, thin, high-density capacitor technologies optimized as embedded passive devices for thin silicon interposers. This work outlines the design, fabrication, simulation and testing of each device revision using standard silicon microfabrication processes and silicon interposer technologies. Consequently, capacitive storage devices were micro-machined with geometries which maximize surface area and exhibit the capability of sourcing 100A of current with a response time greater than 100 A/nsec through the use of thin layered, ALD high-K materials. The simulation and testing of these devices show general agreement when subjected to a standard ring-down procedure. This paper provides descriptions and design challenges encountered during fabrication, testing and integration of these passive devices. In addition, potential device integration and implementation strategies for use in silicon interposers are also provided. The modification and revision of several device generations is documented showing increased device capacitance density, maximized current capabilities and minimized effects of series inductance and resistance. The resulting structures are thin, capacitive devices that may be micro-machined using industry standard Si MEMS processes and are compatible with Si interposer 3D technologies. The subsequent design processes allow integrated passive components to be attached beneath chips in order to maximize system area and minimize the chip real estate required for capacitive energy storage devices.

Performance of B-Doped SrTiO3/ Ni Sheet for Supercapacitor Material Application

2020 ◽  
Vol 851 ◽  
pp. 25-31
Author(s):  
Markus Diantoro ◽  
Ahmad Al Ittikhad ◽  
Thathit Suprayogi ◽  
Nasikhudin ◽  
Joko Utomo
Keyword(s):  
Electrode Materials ◽  
Solid State Reaction Method ◽  
Raw Material ◽  
Molar Ratio ◽  
Sintering Process ◽  
X Ray Diffraction ◽  
Energy Storage Devices ◽  
Xrd Pattern ◽  
X Ray ◽  
Storage Devices

The development of energy storage devices encourages the sustainability of research on basic materials of supercapacitor technology. SrTiO3 is one of metal oxide called as titanate alkali metal ATiO3 (A = Ba, Sr, Ca). This material shows an excellent dielectric constant, thus expected to be potential as raw material of supercapacitor. In this work, boron was used as a dopant on the SrTiO3 system to modify its local structure and enhance the electrical properties. Synthesis SrTi1-xBxO3 was carried out using a solid-state reaction method followed by the sintering process in various molar ratio. The microstructure of SrTi1-xBxO3 compound was identified by X-ray Diffraction with Cu-Kα. XRD pattern identified the presence of SrTi1-xBxO3 phase with a slight change in the lattice parameters. I-V measurement confirmed that the electrical conductivity increased gradually up to 16.04 Ω-1cm-1. For investigating their application for electrode materials, CV was employed and it presents that the specific capacitance and energy density of x = 0.08 were 5.488 Fg-1 and 0.110 Jg-1.

Aqueous Manganese Dioxide Ink for Paper-Based Capacitive Energy Storage Devices

2015 ◽  
Vol 127 (23) ◽  
pp. 6904-6907 ◽  
Author(s):  
Jiasheng Qian ◽  
Huanyu Jin ◽  
Bolei Chen ◽  
Mei Lin ◽  
Wei Lu ◽  
...  
Keyword(s):  
Energy Storage ◽  
Manganese Dioxide ◽  
Energy Storage Devices ◽  
Capacitive Energy Storage ◽  
Storage Devices

scholarly journals The Cellulose Nanofibers for Optoelectronic Conversion and Energy Storage

2014 ◽  
Vol 2014 ◽  
pp. 1-13 ◽  
Author(s):  
Yongfeng Luo ◽  
Jianxiong Zhang ◽  
Xi Li ◽  
Chunrong Liao ◽  
Xianjun Li
Keyword(s):  
Energy Storage ◽  
Cellulose Nanofibers ◽  
Optoelectronic Device ◽  
Nanostructured Material ◽  
The Novel ◽  
Energy Storage Devices ◽  
Tempo Oxidation ◽  
Environment Friendly ◽  
Storage Devices ◽  
Low Thermal Expansion

Cellulose widely exists in plant tissues. Due to the large pores between the cellulose units, the regular paper is nontransparent that cannot be used in the optoelectronic devices. But some chemical and physical methods such as 2,2,6,6-tetramethylpiperidine-1-oxyl radical (TEMPO) oxidation can be used to improve the pores scale between the cellulose units to reach nanometer level. The cellulose nanofibers (CNFs) have good mechanical strength, flexibility, thermostability, and low thermal expansion. The paper made of these nanofibers represent a kind of novel nanostructured material with ultrahigh transparency, ultrahigh haze, conductivity, biodegradable, reproducible, low pollution, environment friendly and so on. These advantages make the novel nanostructured paper apply in the optoelectronic device possible, such as electronics energy storage devices. This kind of paper is considered most likely to replace traditional materials like plastics and glass, which is attracting widespread attention, and the related research has also been reported. The purpose of this paper is to review CNFs which are applied in optoelectronic conversion and energy storage.

scholarly journals DESIGN FEATURES AND THE TIME CHARACTERISTICS OF THE RAIL FOUR-CHANNEL SPARK GAP WITH FIELD DISTORTION

2021 ◽  
pp. 27-35
Author(s):  
Vasiliy V. Ashmarin ◽  
Denis G. Osipov ◽  
Igor V. Rezyukov
Keyword(s):  
Threshold Voltage ◽  
Delay Time ◽  
Energy Storage Devices ◽  
Electrode Gap ◽  
Capacitive Energy Storage ◽  
Control Electrode ◽  
Storage Devices ◽  
Spark Gap ◽  
Field Distortion ◽  
Discharge Formation

The article discusses the design features of a four-channel rail arrester with field distortion and the results of the study of its time characteristics. The need for this work related to the development of such dischargers due to the lack of their analogues is due to the widespread use of capacitive energy storage devices as power sources for electrodynamics mass accelerators. At the present stage of development of science and technology, the use of such accelerators is the most promising for creating experimental stands for modeling in laboratory conditions the processes of high-speed interaction of aircraft structural elements with particles of different masses and different origins. According to the operating conditions of the experimental stands and a wide range of changes in both particle masses and interaction velocities, the amplitude values of currents through the low-inductive load of the mass accelerator vary from hundreds of kilo amperes to several million amperes at acceleration times from units to hundreds of microseconds. With this in mind, capacitive energy storage devices are made in a multi-module design. Each module is switched to the load by its own switch. To extend the range of operation of the drive, provide the required erosion resistance of the electrodes of the switch, the stability of the discharge formation at parallel operation of switches developed construction of a rail four-channel spark gap with the distortion field, experimental and theoretical study of the effect of the ratio of the geometric dimensions of the inter electrode gap for obtaining small values for the delay time of the discharge. As a result of the research, it is shown that the value of the delay time tzap depends on the shape and diameter of the main electrodes, the material of the electrodes, the distance between the main and the control electrode, the threshold voltage, as well as the degree of inhomogeneity of the field in the inter electrode gap. The obtained analytical expressions allow us to determine the values of threshold stresses and delay times, taking into account the statistical delay time and the time of discharge formation. It is established that the value of the delay time is significantly affected by the field inhomogeneity coefficient and the configuration of the control electrode. It is noted that when the operating voltage on the arrester exceeds the threshold voltage, the delay time of the switch lies in the nanosecond region. The value of the threshold voltage Upor, at which the process of direct transformation of the streamer into a spark discharge with high conductivity, followed by a breakdown of the inter electrode gap, is determined.

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