scholarly journals Magnetic generation of normal pseudo-spin polarization in disordered graphene

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
R. Baghran ◽  
M. M. Tehranchi ◽  
A. Phirouznia

AbstractSpin to pseudo-spin conversion by which the non-equilibrium normal sublattice pseudo-spin polarization could be achieved by magnetic field has been proposed in graphene. Calculations have been performed within the Kubo approach for both pure and disordered graphene including vertex corrections of impurities. Results indicate that the normal magnetic field $$B_z$$ B z produces pseudo-spin polarization in graphene regardless of whether the contribution of vertex corrections has been taken into account or not. This is because of non-vanishing correlation between the $$\sigma _z$$ σ z and $$\tau _z$$ τ z provided by the co-existence of extrinsic Rashba and intrinsic spin–orbit interactions which combines normal spin and pseudo-spin. For the case of pure graphene, valley-symmetric spin to pseudo-spin response function is obtained. Meanwhile, by taking into account the vertex corrections of impurities the obtained response function is weakened by several orders of magnitude with non-identical contributions of different valleys. This valley-asymmetry originates from the inversion symmetry breaking generated by the scattering matrix. Finally, spin to pseudo-spin conversion in graphene could be realized as a practical technique for both generation and manipulation of normal sublattice pseudo-spin polarization by an accessible magnetic field in a easy way. This novel proposed effect not only offers the opportunity to selective manipulation of carrier densities on different sublattice but also could be employed in data transfer technology. The normal pseudo-spin polarization which manifests it self as electron population imbalance of different sublattices can be detected by optical spectroscopy measurements.

2009 ◽  
Vol 23 (30) ◽  
pp. 3631-3642
Author(s):  
CAIHUA BI ◽  
FENG ZHAI

We revisit the properties of spin transport through a semiconductor 2DEG system subjected to the modulation of both a ferromagnetic metal (FM) stripe on top and the Rashba and Dresselhaus spin-orbit interactions (SOIs). The FM stripe has a magnetization along the transporting direction and generates an inhomogeneous magnetic field in the 2DEG plane which is taken as a double-δ shape. It is found that the spin polarization of this system generated from a spin-unpolarized injection can be remarkable only within a low Fermi energy region and is not more than 30% for the parameters available in current experiments. In this energy region, both the magnitude and the orientation of the spin polarization can be tuned by the Rashba strength, the Dresselhaus strength, and the magnetic field strength. The magnetization reversal of the FM stripe cannot result in a change of the conductance, but can rotate the orientation of the spin polarization. The results are in contrast to those in [ J. Phys.: Condens. Matter15 (2003) L31] where a pure spin state for incident electrons is artificially assumed.


Author(s):  
J. Nitta

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.


2016 ◽  
Vol 30 (25) ◽  
pp. 1650183 ◽  
Author(s):  
Yu. N. Ovchinnikov

The effect of spin-orbit (SO) interaction on the formation of the critical states in thin superconducting films in magnetic field oriented along the film is investigated. Hereby, the case of interband pairing is considered. It was found that eight branches exist in the plane of two parameters [Formula: see text] determined by the value of magnetic field and SO interaction. Six modes leads to inhomogeneous states with different values of the impulse [Formula: see text]. Each state is doubly degenerate over direction of impulse [Formula: see text]. The parameter values at critical point are found for all eight branches in explicit form for zero temperature. The optimal two branches are estimated, corresponding to largest critical magnetic field value for given SO interaction.


2011 ◽  
Vol 25 (15) ◽  
pp. 1259-1270
Author(s):  
TIANXING MA

Within the Luttinger Hamiltonian, electric-field-induced resonant spin polarization of a two-dimensional hole gas in a perpendicular magnetic field was studied. The spin polarization arising from splitting between the light and the heavy hole bands shows a resonant peak at a certain magnetic field. Especially, the competition between the Luttinger term and the structural inversion asymmetry leads to a rich resonant peaks structure, and the required magnetic field for the resonance may be effectively reduced by enlarging the effective width of the quantum well. Furthermore, the Zeeman splitting tends to move the resonant spin polarization to a relative high magnetic field and destroy these rich resonant spin phenomena. Finally, both the height and the weight of the resonant peak increase as the temperature decreases. It is believed that such resonant spin phenomena may be verified in the sample of a two-dimensional hole gas, and it may provide an efficient way to control spin polarization by an external electric field.


1982 ◽  
Vol 104 (22) ◽  
pp. 5878-5883 ◽  
Author(s):  
Richard S. Hutton ◽  
Heinz D. Roth ◽  
Marcia L. Manion Schilling ◽  
Anthony M. Trozzolo ◽  
Thomas M. Leslie

1989 ◽  
Vol 66 (12) ◽  
pp. 6138-6143 ◽  
Author(s):  
Harukazu Miyamoto ◽  
Toshio Niihara ◽  
Hirofumi Sukeda ◽  
Masahiko Takahashi ◽  
Takeshi Nakao ◽  
...  

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