scholarly journals Integrated non-volatile plasmonic switches based on phase-change-materials and their application to plasmonic logic circuits

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Rajib Ratan Ghosh ◽  
Anuj Dhawan
Keyword(s):  
Phase Change ◽  
Building Blocks ◽  
Logic Circuits ◽  
Optical Data Storage ◽  
Plasmonic Waveguide ◽  
Optical Data ◽  
Electro Optic ◽  
Half Adder ◽  
Logic Operations ◽  
Plasmonic Switches

AbstractIntegrated photonic devices or circuits that can execute both optical computation and optical data storage are considered as the building blocks for photonic computations beyond the von Neumann architecture. Here, we present non-volatile hybrid electro-optic plasmonic switches as well as novel architectures of non-volatile combinational and sequential logic circuits. The electro-optic switches consist of a plasmonic waveguide having a thin layer of a phase-change-material (PCM). The optical losses in the waveguide are controlled by changing the phase of the PCM from amorphous to crystalline and vice versa. The phase transition process in the PCM can be realized by electrical threshold switching or thermal conduction heating via external electrical heaters or the plasmonic waveguide metal itself as an integrated heater. We have demonstrated that all logic gates, a half adder circuit, as well as sequential circuits can be implemented using the plasmonic switches as the active elements. Moreover, the designs of the plasmonic switches and the logic operations show minimum extinction ratios greater than 20 dB, compact designs, low operating power, and high-speed operations. We combine photonics, plasmonics and electronics on the same platform to design an effective architecture for logic operations.

High Bandwidth Electro-optic Scanner for Optical Data Storage

2000 ◽  
Vol 39 (Part 1, No. 2B) ◽  
pp. 883-887 ◽  
Author(s):  
Jinhui Zhai ◽  
Yuhong Huang ◽  
Steve Schroeck ◽  
W. Messner ◽  
Daniel D. Stancil ◽  
...  
Keyword(s):  
Data Storage ◽  
Optical Data Storage ◽  
Optical Data ◽  
Electro Optic ◽  
High Bandwidth

Recent Progress of Electro-optic Polymers for Device Applications

1997 ◽  
Vol 488 ◽  
Author(s):  
Alex K-Y. Jen ◽  
Qing Yang ◽  
Seth R. Marder ◽  
Larry R. Dalton ◽  
Ching-Fong Shu
Keyword(s):  
Data Storage ◽  
High Speed ◽  
Stable State ◽  
Optical Data Storage ◽  
Device Fabrication ◽  
Optical Data ◽  
Material System ◽  
Electro Optic ◽  
Potential Applications ◽  
Device Applications

AbstractElectro-optic (E-O) polymers have drawn great interest in recent years because of their potential applications in photonics devices such as high speed modulators and switches, optical data storage and information processing1–2. In order to have suitable materials for device fabrication, it is essential to design and develop polymeric material systems (active and passive polymers) with matched refractive indices, large E-O coefficients, good temporal and photochemical stability3–8 The E-O response of an active polymer commonly arises from the electric field induced alignment of its second-order nonlinear optical (NLO) chromophore, either doped as a guest/host system or covalently bonded as a side-chain. Because of the strong interaction among the electric dipoles, the poled structure is in a meta-stable state; the poled NLO chromophores which possess large dipole moment will tend to relax back to the randomly oriented state. As a result, the stability of the poled structure strongly depends on the rigidity of the overall material system. As it might be expected, the continuous increases of the rigidity and Tg of poled polymers imposes constraints on the selection of suitable chromophores that can survive the hightemperature poling and processing conditions. To circumvent this problem, we have developed a series of chromophores that possess conformation-locked geometry and perfluoro-dicyanovinylsubstituted electron-accepting group which demonstrate both good thermal stabilty and nonlinearity. This paper provides a brief review of these highly efficient and thermally stable chromophores and polymers for device applications.

A Novel Approach to Obtain GeSbTe-Based High Speed Crystallizing Materials for Phase Change Optical Recording

2001 ◽  
Vol 674 ◽  
Author(s):  
Tae-Yon Lee ◽  
Byung-ki Cheong ◽  
Taek Sung Lee ◽  
Sung Jin Park ◽  
Won Mok Kim ◽  
...  
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
High Speed ◽  
Preliminary Test ◽  
Optical Data Storage ◽  
Optical Recording ◽  
Optical Data ◽  
Recording Layer ◽  
Novel Approach ◽  
Vegard’S Law

ABSTRACTA new approach is proposed to obtain fast crystallizing materials based on a conventional GeSbTe alloy for rewritable phase change optical data storage. By means of co-sputtering, Ge1Sb2Te4alloy was mixed with Sn1Bi2Te4alloy so as to form pseudo-binary alloys (Ge1Sb2Te4)1-x(Sn1Bi2Te4)x (x is a mole fraction). From structural and optical analyses of the co- sputtered and annealed alloy films, the formation of stable crystalline single phases was observed along with a Vegard's law behavior, suggesting a homogeneous mixing of the two alloys. By use of a 4 layered disk with (Ge1Sb2Te4)0.85(Sn1Bi2Te4)0.15 recording layer, a preliminary test of writing and erasing was carried out and the results were compared with the case of the disk with Ge1Sb2Te4recording layer. The (Ge1Sb2Te4)0.85(Sn1Bi2Te4)0.15 recording layer was found to yield markedly higher erasibility, especially with increasing disk linear velocity.

Understanding the Electro-thermal and Phase-transformation Processes in Phase-change Materials for Data Storage Applications

2003 ◽  
Vol 803 ◽  
Author(s):  
C. D. Wright ◽  
M. Armand ◽  
M. M. Aziz ◽  
S. Senkader ◽  
W. Yu
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials ◽  
Random Access ◽  
Optical Data Storage ◽  
Operating Conditions ◽  
Optical Data ◽  
Probe Type ◽  
Practical Utilization ◽  
Transformation Processes

ABSTRACTAttempts at the practical utilization of Sb-Te based alloys beyond optical data storage have been made recently by employing these materials in both scanning probe type memories, and in electrical memory devices - namely Phase-Change Random Access Memory (PC-RAM). We have developed models to simulate the electrical, thermal, and phase-change characteristics of this important class of material. In this paper we describe the physical basis of our models and present simulation results for different memory configurations and operating conditions.

The Patterned Optical Phase Change Recording Media

2005 ◽  
Author(s):  
Evan Small ◽  
Sadegh M. Sadeghipour ◽  
Mehdi Asheghi
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Numerical Aperture ◽  
Data Access ◽  
Optical Microscope ◽  
Optical Data Storage ◽  
High Density ◽  
Optical Data ◽  
Optical Phase ◽  
Storage Devices

Demands for the high storage capacities and rates of data transfer have been overwhelming in the recent years. With the increasing use of multimedia, the rewritable optical phase-change disks, e.g. CD and DVD, have become more popular. The optical PC data storage devices provide relatively short data access rates (∼ 10 MHz) and moderate areal densities. As in other areas of data storage, there has been tremendous demand and pressure, driven by consumer application, for inexpensive high-density PC systems. So far, the optical data storage industry has managed to meet the demands by using lasers with shorter wavelengths and objective lenses with higher numerical aperture (NA). Several strategies such as “multilevel storage layers” [1] and “mark radial width modulation” [2] have been proposed for the next generation of the high-density PC data storage devices. There have been advances in near field optical techniques to increase density (40 Gb/in) using solid immersion lens [3]. Hosaka et al. [4] demonstrated 60 nm domains in phase change media that translates to 170 Gb/in2 using a scanning near-filed optical microscope. Kado and Tohda [5] used an atomic force microscope (AFM) to locally modify the electrical property (×100) of a PC material by applying an electrical pulse between the probe and media. They achieved an areal density near 1 Tbits/cm2.

Copper vanadates as candidate materials for phase change optical memory

1992 ◽  
Vol 7 (3) ◽  
pp. 741-744 ◽  
Author(s):  
D.P. Birnie ◽  
J.D. Weinberg ◽  
D.G. Swanson
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Data Storage ◽  
Optical Memory ◽  
Optical Data Storage ◽  
Optical Data ◽  
Storage Devices ◽  
Phase Development ◽  
Successful Phase ◽  
Oxide Melts

Several copper vanadium oxide melts were tested for possible application as the active medium in phase-change optical data storage devices. These materials were melted in the bulk and then quenched. Their phase development was characterized to help determine their applicability to optical data storage. It was found that they satisfy many of the criteria necessary for successful phase-change data storage; further studies of their behavior in thin film geometry would be warranted.

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