Room-temperature intermediate layer bonding for microfluidic devices

Lab on a Chip ◽  
2009 ◽  
Vol 9 (24) ◽  
pp. 3481 ◽  
Author(s):  
Jacob Bart ◽  
Roald Tiggelaar ◽  
Menglong Yang ◽  
Stefan Schlautmann ◽  
Han Zuilhof ◽  
...  
Keyword(s):  
Intermediate Layer ◽  
Room Temperature ◽  
Microfluidic Devices

Organic Solvent Fumigation Bonding for Multi-Layer Poly(methyl Methacrylate) Microfluidic Device

2014 ◽  
Vol 609-610 ◽  
pp. 654-659 ◽  
Author(s):  
He Zhang ◽  
Xiao Wei Liu ◽  
Li Tian ◽  
Xiao Wei Han ◽  
Yao Liu
Keyword(s):  
Low Temperature ◽  
Organic Solvent ◽  
Methyl Methacrylate ◽  
Room Temperature ◽  
Microfluidic Devices ◽  
Saturated Steam ◽  
Silicone Adhesive ◽  
Cover Sheet ◽  
Temperature And Pressure ◽  
Bonding Method

In this paper, a novel bonding method for microfluidic devices was presented. The organic solvent fumigation bonding method can be used to produce multi-layer PMMA microfluidic devices under the condition of room temperature and low pressure. During the bonding, we choose chloroform as bonding solvents, the polyimide tape was used to protect no-need-bonding side of the cover sheet and the sealant silicone adhesive was used to protect the microstructure in the bonding side. The substrate was fumigated for 5minutes in the saturated steam conditions, then remove the polyimide tape as well as the sealant silicone adhesive. Assemble the fumigation cover sheet to the substrate with microchannel by using fixtures, soon after put the fixture and the substrates into the oven, dried at 50 °C for 10 minutes. Finally, remove the fixture, the bonding complete. Because of the bonding was accomplished under conditions of low temperature and pressure, the deformation of microchannel is very small. When the method was used for multilayer chip bonding, it also achieved good results.

Heteroepitaxy of Ge on Vicinal Si(100)

1990 ◽  
Vol 198 ◽  
Author(s):  
Mohan Krishnamurthy ◽  
Jeff S. Drucker ◽  
J.A. Venables
Keyword(s):  
Intermediate Layer ◽  
Room Temperature ◽  
Secondary Electron ◽  
Elevated Temperatures ◽  
Film Growth ◽  
Growth Parameters ◽  
Ex Situ ◽  
Nucleation Density ◽  
Size Distributions ◽  
Surface Steps

ABSTRACTThe initial stages of germanium heteroepitaxy on vicinal Si(100) have been studied using in-situ deposition in a UHV STEM. Germanium was deposited using molecular beam techniques onto substrates misoriented 1° and 5* toward <110> held at room temperature, 375°C and 525°C. Film thicknesses were in the range 4-6 ML, just greater than the stable intermediate layer of 3-4ML (1ML = 0.14nm). The Ge clusters were observed using biassed secondary electron (b-SE) imaging with nanometer resolution. Comparisons were made between deposition at the elevated temperatures, and room temperature deposition followed by anneals at the same temperatures.Annealing the low temperature deposits produces coarsening of the islands which is similar on the 1° and 5° samples. Island size distributions and other film growth parameters obtained from the 375°C and 525°C anneals indicate that the coarsening is different at these temperatures and is possibly affected by instabilities in the intermediate layer. Results of the high temperature depositions indicate that neither surface steps nor the edges of islands act as perfect sinks, and that diffusion distances are of the order of several microns. The nucleation density and size distributions are markedly different for deposition at 375°C and 525°C possibly due to competitive capture at strong sinks.In a parallel set of experiments in a standard UHV chamber, macroscopic wafer samples were analyzed with RHEED, Auger and secondary electron spectroscopy. These correlate well with the intermediate layer thicknesses previously reported in the literature, and the large contrast observed in the b-SE images. Ex situ TEM studies of samples grown in this chamber show islands with various contrast features including those of coherent strain.

Room Temperature Wafer Bonding of Glass Using Aluminum Oxide Intermediate Layer

2021 ◽  
pp. 2001741
Author(s):  
Kai Takeuchi ◽  
Fengwen Mu ◽  
Yoshiie Matsumoto ◽  
Tadatomo Suga
Keyword(s):  
Aluminum Oxide ◽  
Wafer Bonding ◽  
Intermediate Layer ◽  
Room Temperature

Nano oxide intermediate layer assisted room temperature sintering of ink-jet printed silver nanoparticles pattern

2019 ◽  
Vol 30 (49) ◽  
pp. 495302
Author(s):  
Zhongyang Liu ◽  
Hongjun Ji ◽  
Qunhui Yuan ◽  
Xing Ma ◽  
Huanhuan Feng ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Intermediate Layer ◽  
Room Temperature ◽  
Nano Oxide ◽  
Ink Jet

scholarly journals Heat and pressure-resistant room temperature irreversible sealing of hybrid PDMS–thermoplastic microfluidic devices via carbon–nitrogen covalent bonding and its application in a continuous-flow polymerase chain reaction

RSC Advances ◽  
2020 ◽  
Vol 10 (28) ◽  
pp. 16502-16509 ◽  
Author(s):  
Rajamanickam Sivakumar ◽  
Kieu The Loan Trinh ◽  
Nae Yoon Lee
Keyword(s):  
Polymerase Chain Reaction ◽  
Continuous Flow ◽  
Room Temperature ◽  
Microfluidic Devices ◽  
Covalent Bonding ◽  
Chain Reaction ◽  
Polymerase Chain

In this study, we have introduced a facile room-temperature strategy for irreversibly sealing polydimethylsiloxane to various thermoplastics using (3-aminopropyl)triethoxysilane (APTES) and [2-(3,4-epoxycyclohexyl)ethyl]trimethoxysilane (ECTMS).

Fabrication of a Microfluidic Device with Insulated Electrodes on Top and Bottom Sides of the Channel

2009 ◽  
Vol 74 ◽  
pp. 183-186
Author(s):  
Lu Jun Zhang ◽  
Andre Bossche
Keyword(s):  
Microfluidic Device ◽  
Intermediate Layer ◽  
Adhesive Bonding ◽  
Microfluidic Devices ◽  
Process Equipment ◽  
Wafer Level ◽  
Bonding Technique

This paper presents a method to fabricate the microfluidic devices with insulated electrodes on top and bottom sides of the channel. To form the channel containing vertically opposing electrodes, two processed substrates were bonded together with an SU-8 intermediate layer sandwiched in between. An adhesive bonding technique, at wafer level, with accurate alignment was developed. Instead of using wafer bonder, the bonding was conducted on a hotplate, which relieves the requirement on the process equipment to a great extent.

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